699 NPN Search Results

transistor 2n

Abstract: 2N 699 2n699
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCER

transistor 699

Abstract: transistor 2n 2N699 2n 699
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: 699 FIBER SENSORS Head-separated Dual Display Digital Pressure Sensor For Gas DPS-400 SERIES DPH-100 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1373~ ■■Sensor selection guide. P.661~

Contextual Info: ISO-9001 CERTIFIED BY DESC M.S.KENNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER 645 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-STD-1772 CERTIFIED FEATURES: 70 Vpp Output Voltage 150 MHz Typical Bandwidth Transition Times Typically <2.5 nS

2SC1226

Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A

transistor 38W

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 173/173-1 HIGH POWER DUAL OPERATIONAL AMPLIFIER 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-PRF-38534 FEATURES: Extremely Compact Surface Mount Package Low Cost Dual High Power Amplifier Wide Supply Voltage Range: 5V to 40V

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 173/173-1 HIGH POWER DUAL OPERATIONAL AMPLIFIER 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-PRF-38534 FEATURES: Extremely Compact Surface Mount Package Low Cost Dual High Power Amplifier Wide Supply Voltage Range: 5V to 40V

Contextual Info: ISO -9001 CERTIFIED BY DESC M.S.KEIMNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER ^ - _ K / l K v T J 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • MIL-STD-1772 CERTIFIED 70 Vpp Output Voltage 150 MHz Typical Bandwidth

Contextual Info: ISP-9001 CERTIFIED BY DESC HIGH POWER DUAL OPERATIONAL AMPLIFIER M.S.KENNEDY CORP. 171/172 8 1 7 0 Thompson Road Cicero, N.Y. 13 03 9 315 699-9201 FEATURES: MIL -PRF-38534 QUALIFIED • • • • • • Low Cost W ide Supply Voltage Range: 5 V to 4 0 V

3W amp bridge

Contextual Info: /SO -9001 CERTIFIED BY DESC 105 HIGH POWER Q U A D O PERATIO N AL AMPLIFIER M.S. KENNEDY CORP 8 1 7 0 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MIL-PRF-38534 QUALIFIED • • • • • • Low Cost W ide Supply Voltage Range: 5 V to 40V

TCA 105B

Contextual Info: ISP-9001 CERTIFIED BY DESC HIGH PO W ER Q U A D ^ 105 O P E R A T IO N A L AMPLIFIER M.S.KENNEDY CORP. 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MIL-PRF-38534 QUALIFIED • • • • • • Low Cost Wide Supply Voltage Range: 5V to 4 0 V

ZX6T9M522

Abstract: SOT23 MARK PD sot236 651 DUAL NPN SOT23-6
Contextual Info: Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO IC PD hFE V A W Min VCE sat Max mV at IC at IC A RCE(sat) at IB mA Part Mark m ZX6TDNE6 2x NPN 9 4.5 1.1 500 0.2 45 1 100 22 6NN ZX6TD9E6 2x PNP -9 -4.5 1.1 500 -0.01 -45 -1

Contextual Info: Ls.iis.ij <^>£.mi-(-ona\jicto\ One. C/ J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLX96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLX96 is Designed for Class A Television Band IV- V Amplifier

Contextual Info: rZw SCS-THOMSON * im i S ¥ l( Q « S ST931ZT HIGH VOLTAGE IGNITiON COIL DRIVER _ NPN POWER DARLINGTON ADVANCE DATA • VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE APPLICATIONS . HIGH RUGGEDNESS ELECTRONIC

C 828 Transistor

Abstract: marking code 20A iC 828 Transistor LB1200
Contextual Info: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for

ms 12211

Abstract: 2N4951 2N4944 2n4946
Contextual Info: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Transistors General Purpose Amplifiers and Switches (Continued) Type No. 2N4401 Case Style TO-92 VCBO (V) Mln VCEO (V) Mln VEBO (V) Mln

2SC4243

Contextual Info: K -7 > v 7. $ /Transistors 2SC4243 2SC4243 Triple Diffused Planar NPN Silicon Transistor ¡^¡foiJEiiliffl/H igh Voltage Amp. • ÿ<-ii\fSI2l/Dimensions Unit : mm 1 ) ¡l¡F tJ IT ‘ (fo •£> o 6.510.2 B Vceo=300V 2) =1 U ? ÿ f c H * § *¿ > '" '.1 ' ¡ H ' o

F MARKING 6PIN

Contextual Info: UMH3N IMH3A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMH3N and IMH3A; H3 UMH3N (UMT6) Z.OtO.2 package contains two independent NPN digital transistors

706a

Abstract: 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel
Contextual Info: r SEMELAB LT]> 37E J> 6133167 □□□□□12 =] • SULB ■c 2C 2C “~2C S-2C * 2N 415 425 444 746 696 HI-REL HI-REL HI-REL HI-REL SCREEN NPN NPN NPN NPN NPN * * T077 T077 T077 T077 T039 35 75 35 50 60 0.03 0.1 0.05 0.1 0.2 lOOmin 35min 40min 35min 40min

bf 671

Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
Contextual Info: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C

2SC5259

Contextual Info: TOSHIBA 2SC5259 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) Unit in mm + 0.5 MAXIMUM RATINGS (Ta = 25°C) SYMBOL

2SC17

Abstract: 2SC1742
Contextual Info: ^ J j y N P N X ^ 5> ^ z / p i 7 L y - t B h ^ y ^ X 5> ilLICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC O U H F - C - V K fijüf-tëiffiffl O I t l i 1742 i i INDUSTRIAL APPLICATIONS s- f - v - r « CML) U n it in m O U H F ~ C Band Low N oise A m p lifie r A p p lic a tio n s