690 MOSFET Search Results

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515

Contextual Info: User's Guide SLVU431 – January 2011 Using the TPS53219EVM-690 Wide-Input Voltage, Eco-mode , Single, Synchronous, Step-Down Controller The TPS53219EVM-690 evaluation module allows users to evaluate the Texas Instruments TPS53219, a small-sized, single, buck controller with adaptive on-time D-CAP™ mode control. Included in this

damn fast op amp

Abstract: 1200w power amplifier circuit diagram 500w FM power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w power amplifier installation diagram S100DB al 12 fc battery drill charger 1kw full bridge reference design 1200w inverter circuit diagram 500w audio amplifier circuit diagram
Contextual Info: -1 PWM Pulse Width Modulation • More Work • Less Waste As delivered power levels approach 200W, sometimes before then, heatsinking issues become a royal pain. PWM is a way to ease this pain. A PEX MICROTECHNOLOGY CORPORATION • TELEPHONE 5 2 0 690-8600 • FAX (5 2 0 ) 8 8 8-3329 • ORDERS (5 2 0 ) 690-8601 • EM AIL p rodlit@ ap exm icro tech.co m

690 mosfet

Contextual Info: FQB7P20 / FQI7P20 P-Channel QFET MOSFET - 200 V, - 7.3 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQB7P20 P-Channel QFET MOSFET -200 V, -7.3 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQPF7P20 P-Channel QFET MOSFET -200 V, -5.2 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description • RDS on = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

650-01F

Abstract: DIXYS 8502F c310 vmk 90-02
Contextual Info: DIXYS _ MOSFET Modules v p ^Dfconl DSS Diijon) Contents 0 0} ' Page . max. Tc = 25 °C Tc = 25 °C V A n 100 590 0.0021 > VMO 550-01F C3-2 690 0.0018 >• VMO 650-01F C3-4 200 85 0.025 85 0.025 385 0.0046 420 0.0042 C3-6 VMK 90-02 T2 C3-10

Contextual Info: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V ID25 = 690 A RDS on = 1.8 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 G KS S S KS D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW

650-01F

Abstract: robot control AC motor speed control
Contextual Info: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V = 690 A ID25 RDS on = 1.8 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 G KS S S KS D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW

Contextual Info: HiPerFET MOSFET Module VMO 650-01F VDSS = 100 V Id25 ^ D S o n “ 690 A - 1 - 8 mQ N-Channel Enhancement Mode Preliminary Data . O Symbol Test Conditions Maximum Ratings vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100

Contextual Info: DIXYS HiPerFET MOSFET Module VMO 650-01F VDSS = 100V I D25 = 690 A RDS on = 1.8 m û N-Channel Enhancement Mode Preliminary Data 11 S Symbol Test Conditions V *D S S Tj = 25°C to 150°C 100 V VTOR Tj = 25°C to 150°C; RGS = 10 kQ 100 V Vos v GSM Continuous

Contextual Info: HiPerFETTM MOSFET Module VMO 650-01F VDSS = 100 V = 690 A ID25 RDS on = 1.8 mW D N-Channel Enhancement Mode G Preliminary Data E 72873 KS S S Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 100 V VGS Continuous ±20

Contextual Info: FDD7N20 N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description • RDS on = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: UM10710 UBA20270DB1122 - 35 W/46 V/690 mA LED driver demo board Rev. 2 — 25 September 2013 User manual Document information Info Content Keywords UBA20270DB1122, demo board, LED, non-dimmable, PFC Abstract The UBA20270DB1122 is a non-dimmable 230 V mains 35 W LED driver

500w car audio amplifier circuit diagram

Abstract: Diode smd code 10-16V 12v 200W AUDIO booster CIRCUIT DIAGRAM 8038 waveform generator Diode smd 1016V 230v 400Hz converter schematic TRANSISTOR SMD MARKING CODE AOL 8038 ic tester circuit diagram circuit diagram of crt monitor yoke coil 1500w mosfet audio amplifier circuit diagram
Contextual Info: Designed to Help You Boost Your Analog Design Power Revision 4b November 5, 1998 23:24:17 GMT APEX MICROTECHNOLOGY CORPORATION 5980 N. Shannon Road, Tucson, Arizona USA 520 690-8600 Fax (520) 888-7003 Table of Contents Welcome to Apex 4 Model number conventionsÉÉÉÉÉÉ

nf 931 diode

Contextual Info: OIXYS HiPerFET MOSFET Module VMO 650-01 F VDSS = 100 V = 690 A D25 RDS on = 1.8 mQ N-Channel Enhancement Mode G J P relim in ary Data é KS Symbol v „ ss Test Conditions Maximum Ratings Tj = 2 5 °C tO l5 0 °C 100 V Tj = 25°C to 150°C; RGS = 10 k£2

mosfet marking code AL sot-23

Abstract: transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T
Contextual Info: TELEFUNKEN EL ECT RONI C 61C D • fiTBDDTb 0 0 0 5 4 5 b S 690 T trKLKFdDKlKIKl electronic Creative Technologies 4 ■ AL 66 _ r ~ 3 i- L i Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier

380-02F

Abstract: C314
Contextual Info: MOSFET Modules _ Contents D v DSS ^D co n t max. Tc = 25°C Tc = 25°C V A m ii 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 450 4.6 VMO 450-02F 1> C3-14 500 4.2 VMO 500-02F 2> C3-18 200 TO 240 DS(on)max ^ 0* ^ . VMK 90-02 T2

VMO 440

Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Contextual Info: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)

TO-264AA

Abstract: bfc60 BFC51 SOT227 BFC24
Contextual Info: lili Sem elab Power M anagem ent Division 4 GENERATION PLASTIC POWER MOSFETS Part Package Number Type 255 BFC10 SOT227 242 BFC11 SOT227 5410 232 BFC12 SOT227 5350 228 BFC13 SOT227 BFC14 224 520 5325 56.0 IN DEVELOPMENT, ULTRA LOW RDS ON MOSFETs in SOT227 Package

APT802R4KN

Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Contextual Info: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED

k1507

Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
Contextual Info: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low