69-206 TRANSISTOR DATA Search Results

sl-100 TRANSISTOR

Abstract: MQC207 OC205 OC206
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 205 M O C 206 MOC2Q7 Sm all Outline Optoisolators Transistor Output These devices co nsist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r, in a surface m o u n ta b le , sm a ll o u tlin e ,

KHB4D0N80F

Abstract: khb*4D0N80F2 KHB4D0N80F2
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: T w \ HEWLETT 1 "H Æ P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data 1 UTM-1053 Features Description • Frequency Range: 5 to 1000 MHz • MODAMP Silicon Monolithic Gain Stages The UTM-1053 contains three silicon monolithic microwave

UTM 222

Abstract: s 1231 166 115
Contextual Info: What HEWLETT m!nM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Applications • IF/RF Amplification The UTM-1053 contains three silicon monolithic microwave integrated circuit RF amplifiers

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

Contextual Info: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C

micronote 103

Abstract: PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP
Contextual Info: APPLICATION NOTE MicroNote 132 AIRCRAFT LIGHTNING PROTECTION A Shortcut to Selecting Transient Voltage Suppressors for RTCA/DO-160E Threats Using Microsemi's New DIRECTselect™ Method by Mel Clark Table of Contents Background 3 Abnormal Voltage Characteristics

Contextual Info: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The UTM-1053 contains three silicon monolithic microwave

TRANSISTOR 58050

Abstract: 58050 transistor
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN

transistor a920

Abstract: transistor A915 transistor a1266 transistor a640 A1279 0/transistor a920
Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTM-1053 Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The UTM-1053 contains three silicon monolithic microwave integrated circuit RF amplifiers mounted on a thin-film substrate

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

A86 046

Abstract: SMA86
Contextual Info: WJ-A86 / SMA86 10 to 200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 28 dB TYP. HIGH EFFICIENCY: 21 mA @ 5 VDC (TYP.) LOW NOISE: 3.8 dB (TYP.) MEDIUM OUTPUT LEVEL: +9.0 dBm (TYP.) Outline Drawings A86

P153 transistor

Contextual Info: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H9500, H9500-03 52 mm Square, Bialkali Photocathode, 12-stage, 16 x 16 Multianode, Small Dead Space, Fast Time Response FEATURES ●Small Animal Imaging ●Compact Gamma Camera ●Scinti-mammography

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

"VDSS 800V" 40A mosfet

Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

KHB4D0N80F2

Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 3 Vdc – 14.4 Vdc Input, 0.6 Vdc - 5.5 Vdc /20 A Outputs Bel Power Inc., a subsidiary of Bel Fuse Inc. Feb. 16, 2012 SLAN-20D1Ax RoHS Compliant Rev.A Features • Non-Isolated  Cost efficient open frame design  Power Good signal

WJ-CA29-1

Abstract: WJ-A29-1
Contextual Info: WJ-A29-1 / SMA29-1 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 0.450 n (11.41) ü Specifications * 0.185 ± 0.015 ‘ (4 70 ± 0 38)

transistor 13000

Contextual Info: u u U A29-1 / SMA29-1 w 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 Specifications 0.200 (5.08) I I I Characteristics Frequency (Min.)

smd ya transistor

Abstract: smd AYA
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH206 P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s