68 2Z Search Results

HG4078B

Abstract: 41640 1620B HG4078
Contextual Info: HG4078B Subminiature PCB Telecom Relay FEATURES Low profile and light weight Highly reliable performance DIL configuration as IC and for use with DIP socket FCC Parts 68 compliant TYPICAL APPLICATIONS Telecommunications Office machine Instruments Computer

HG4078B

Abstract: 056w HG40 1620B
Contextual Info: HG4078B Subminiature PCB Telecom Relay FEATURES Low profile and light weight Highly reliable performance DIL configuration as IC and for use with DIP socket FCC Parts 68 compliant TYPICAL APPLICATIONS Telecommunications Office machine Instruments Computer

HG40

Abstract: HG4078B
Contextual Info: HG4078B Subminiature PCB Telecom Relay FEATURES Low profile and light weight Highly reliable performance DIL configuration as IC and for use with DIP socket FCC Parts 68 compliant TYPICAL APPLICATIONS Telecommunications Office machine Instruments Computer

Piranha RGB LED

Abstract: RY-SP170UHY RY-SP170UHR RY-SP172UHR RY-SP172DBW RY-SP190DBW RY-SP172YG RY-SP190UHR RY-SP170UYG RY-SP110UPG
Contextual Info: SOF Optoelectronics GmbH Gartenstraße 38 • 52249 Eschweiler Übersicht Einzel-LEDs Germany Tel. +49 0 24 03 · 51 93 33 Fax +49 (0) 24 03 · 50 89 68 info@sof-o.de · www.sof-o.de Bedrahtete LEDs Seite Einfarbig SMD LEDs - einfarbig Seite SMD Standard

RXMS1

Abstract: RXMVB RADSS RK 637-104E 637-300E relay rd3 wiring diagram three phase distribution panel schematic relay busbar one line diagram transformer sf6 circuit breaker
Contextual Info: RADSS 1MRK 505 003-BEN Busbar protection Changed since March 1992 Replaces 1M D B 0 5 00 3-E N D ata subject to change without notice ABB Network Partner SE 81 02 58 (SE 81 02 60) Features Application (SE 88 05 68) • Percentage restraint bus differential relay

diode smd ED 68

Abstract: transistor smd 4.z ttp 916
Contextual Info: I International IG R Rectifier PD -9.16 68 A IR G 4 Z Q 7 0 U D preliminary INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Surface Mountable UltraFast CoPack IGBT Features • U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies

26705.201.185

Abstract: 13551.669.699 26659.330.185 14650.669.696 16695627642 KOMAX 40 flachstecker lear 26649.330.186 14730.598.696 26591.331.185
Contextual Info: Introduction MSK Page / Seite 5-8 Micro Connector Systems 0.63 mm x 0.63 mm VEK 9 - 16 17 - 26 27 - 54 55 - 68 69 - 76 77 - 98 99 - 108 109 - 122 123 - 140 141 - 152 Connector Systems PPGLDPHWHU Relaissockel $QZHQGXQJHQIU Flachstecksysteme 2,8 / 4,8 / 6,3 / 9,5 mm

Contextual Info: •ac ».3 n PUMA 68F4003 m o l a t e PUMA 68F4003-12/15/20 Issue 1.0 : S eptem ber 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module ^P in Definition Features Fast access times of 120/150/200 ns. Utilizes 68 J leaded surface mount FR4 epoxy substrate.

D6345

Abstract: 63B45 63A45P D6345C D6445 hd64450 cudisp CP-441 HD63B45P
Contextual Info: H D6345/H D6445 C R T C -II C R T Controller The H D 6345/H D6445 CRTC-II provides an interface b e tw e e n MPU and a raster scan CRT display. The HD6345 is u pw ard-com pat­ ible w ith th e NMOS CRTC HD6845S in pin and softw are, and has a 68 system bus inter­

4.9.1 r

Contextual Info: IRL3103D1S Tape & Reel Information D2Pak TR R 1 .6 0 .0 6 3 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )

Contextual Info: THICK FILM CHIP RESISTORS T Y P E R C 7 3 CONSTRUCTION 1. Ceramic Substrate 2. Ru02 Resistor Film 3. Over Coating 4. Termination 1 AgPd 5. Termination 2 (Ni) 6. Termination 3 (Sn) DIMENSIONS Mark 2Y 2Z/2W 2X/2C/2P 2A/2D/2K 2B/2E 2F/2G 2H/2I 3A 3B EIA 0201

Contextual Info: D1RFRD006 REVISION RECORD REV A A ECO DESCRIPTION ADD ADD DRFT CZH P A R T N U M B E R J6/ 2Z/04 sdmmy P A R T N IIM 9 ER IQ/13/M CHKO * 1 .2 7 * 7 = 8 .8 9 17.8 *|(1 .2 7 *3 = )3 .8 1 (B P 4 C ) WEDGE + 3 .1 1.3 8 .8 9 NQTE5: ELECTRICAL: 1. VOLTAGE RATING: 125 VAC RMS .

Contextual Info: D1RFRD006 REVISION RECORD REV A ECO DESCRIPTION DRFT CHKD l1$2Z/’05 ADD RIB 3.15 G* 5 EN 1 2 - q j p - 11 YELLOW 1 0 — W— 9 ORANGE FOR P /N :E 5 J 8 8 — 1AXJXX— L GREEN M 12 H q g p - 11 GREEN 1 0 — W— 9 ORANGE FOR P /N :E 5 J 8 8 — 1D X JX X -L

2z12 diode

Contextual Info: 2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P=1.5W Peak Reverse Power Dissipation : PRSM=900W at tw=200µs Zener Voltage : VZ=12~51V Plastic Mold Package

2z47

Contextual Info: T O S H IB A 2 Z 1 2 -2 Z 5 1 TOSHIBA ZENER DIODE TENTATIVE SILICON DIFFUSED TYPE 2Z12-2Z51 Unit in mm CONSTANT VOLTAGE REGULATION. RANSIENT SUPPRESSORS. Average Power Dissipation : P = 1.5W Peak Reverse Power Dissipation : P r SM = 900W at ^ = 200^8 Zener Voltage : = 12~51V

2Z12

Abstract: 2Z13 2Z15 2Z16 2Z16A 2Z18 2Z18A 2Z20 1.5W zener diode WB3C
Contextual Info: TO SHIBA 2Z12-2Z51 TOSHIBA ZENER DIODE TENTATIVE CONSTANT VOLTAGE REGULATION. SILICON DIFFUSED TYPE 2Z12-2Z51 Unit in mm TRANSIENT SUPPRESSORS. • • Average Power Dissipation : P = 1.5W Peak Reverse Power Dissipation : P r SM = 900W at tw = 200/^s • Zener Voltage : Vz = 12~51V

122Z

Contextual Info: TOSHIBA 2Z 12-2Z51 TENTATIVE TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION. U n it in m m RANSIENT SUPPRESSORS. A v e ra g e P o w er D issip a tio n : P = 1.5W I Peak Reverse Power Dissipation : P r SM = 900W t w = 200,us Z e n e r V o ltag e ; V z = 1 2 ~ 5 1 V

2z12 diode

Abstract: 2Z12 2Z13 2Z15 2Z16 2Z16A 2Z18 2Z18A 2Z27 2Z51
Contextual Info: 2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.5W Peak Reverse Power Dissipation : PRSM = 900W at tw = 200 µs Zener Voltage : VZ = 12 V ~ 51 V Plastic Mold Package

2Z12

Abstract: 2Z13 2Z51 2Z15 2Z16 2Z16A 2Z18 2Z18A 2Z27
Contextual Info: 2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.5W z Peak Reverse Power Dissipation : PRSM = 900W at tw = 200 µs z Zener Voltage : VZ = 12 V ~ 51 V

LHI 648

Abstract: transistor L44
Contextual Info: 42|+2z- 7585-=>;1 4534 :9@1; ;16-A 2FCPQNFO V V V V V V V V V V V V Gbe^ Nh4@F79:;7= ? 0 1 Gbe^ Nh4@77<?9: /98=-/= 0-=- /956 DhgmZ\m ZkkZg`^f^gm 7B2 7C2 7D DhgmZ\m k^lblmZg\^ 8B2 8C2 8D 766f .Zm 7B <VED/ DhgmZ\m fZm^kbZe Dhbe ihp^k 64=;VB S^^ hk]^kbg` bg_h4

Contextual Info: SN55LBC172 QUADRUPLE LOW-POWER DIFFERENTIAL LINE DRIVER SGLS084C – MARCH 1995 – REVISED JANUARY 2003 D D 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC 4A 4Y 4Z G 3Z 3Y 3A FK PACKAGE TOP VIEW 1A NC VCC 4A 3 2 1 20 19 1Z 4 18 4Y G 5 17 4Z NC 6 16 NC 2Z 7

Contextual Info: SN55LBC172 QUADRUPLE LOW-POWER DIFFERENTIAL LINE DRIVER SGLS084C – MARCH 1995 – REVISED JANUARY 2003 D D 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC 4A 4Y 4Z G 3Z 3Y 3A FK PACKAGE TOP VIEW 1A NC VCC 4A 3 2 1 20 19 1Z 4 18 4Y G 5 17 4Z NC 6 16 NC 2Z 7

EIA-485

Abstract: SN55LBC172 SNJ55LBC172FK SNJ55LBC172J SNJ55LBC172W
Contextual Info: SN55LBC172 QUADRUPLE LOW-POWER DIFFERENTIAL LINE DRIVER SGLS084C – MARCH 1995 – REVISED JANUARY 2003 D D 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC 4A 4Y 4Z G 3Z 3Y 3A FK PACKAGE TOP VIEW 1A NC VCC 4A 3 2 1 20 19 1Z 4 18 4Y G 5 17 4Z NC 6 16 NC 2Z 7

EIA-485

Abstract: SN55LBC172 SNJ55LBC172FK SNJ55LBC172J SNJ55LBC172W
Contextual Info: SN55LBC172 QUADRUPLE LOW-POWER DIFFERENTIAL LINE DRIVER SGLS084C – MARCH 1995 – REVISED JANUARY 2003 D D 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC 4A 4Y 4Z G 3Z 3Y 3A FK PACKAGE TOP VIEW 1A NC VCC 4A 3 2 1 20 19 1Z 4 18 4Y G 5 17 4Z NC 6 16 NC 2Z 7