66A SMD Search Results

2N0807

Abstract: Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G
Contextual Info: SPP80N08S2-07 SPB80N08S2-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode •=175°C operating temperature VDS 75 V RDS on max. SMD version 7.1 mΩ ID 80 A P-TO263-3-2 • Avalanche rated P-TO220-3-1

2N0807

Abstract: INFINEON PART MARKING to263
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode ID
175°C operating temperature P- TO262 -3-1
Avalanche rated max. SMD version P- TO263 -3-2 V 7.1 m
80 A P- TO220 -3-1

PN0807

Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated

2N0807

Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode
175°C operating temperature
Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m
80 A P- TO220 -3-1

PN0807

Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS
=Power-Transistor Feature
N-Channel Product Summary
Enhancement mode VDS 75 V
175°C operating temperature RDS on max. SMD version 6.8 m
Avalanche rated ID 100 A
dv/dt rated P-TO263-3-2 Type

Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
175°C operating temperature P- TO263 -3-2
Avalanche rated V 6.8 m
100 A P- TO220 -3-1
dv/dt rated
Ideal for fast switching buck converter

PN0807

Abstract: 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated

Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated

PN0807

Abstract: 66a smd
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
175°C operating temperature P- TO263 -3-2
Avalanche rated V 6.8 m
100 A P- TO220 -3-1
dv/dt rated Type

2N0807

Abstract: Q67060-S6082 SPB80N08S2-07 S4264 ANPS071E SPI80N08S2-07 SPP80N08S2-07 A410
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 7.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2

2N0807

Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
Contextual Info: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID

smd diode br

Abstract: diode 66a KRF7501
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: FSPYC160R, FSPYC160F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

relay 12V, 70A

Contextual Info: FSPYC160R, FSPYC160F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

4n0609

Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
Contextual Info: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

IPB048N06L

Abstract: IPP048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMDversion ID 60 V 4.4 m: 100 A • 175 °C operating temperature

048N06L

Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature

048N06L

Abstract: IPP048N06L IPB048N06L PG-TO220-3 66a smd
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature

048n06l

Abstract: 44 SMD dpak
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature

048N06L

Abstract: IPP048N06L IPB048N06L IEC61249-2-21 PG-TO220-3 GS-20
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature

IRF7506

Abstract: DIODE SMD MARKING CODE SF
Contextual Info: PD - 9.1268B International llOR1Rectifier IRF7506 PRELIMINARY HEXFET Power IMOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching

LD12A VOLTAGE REGULATOR

Abstract: Ggg 12A IRF7504 smd code marking js diode smd marking 328
Contextual Info: International S Rectifier PD 9.1267C IRF7504 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low O n-R esistance Dual P-C hannel M O S F E T Very Sm all S O IC Package Low Profile < 1 .1 mm Available in T a p e & Reel

ITD50N04S4L-07

Contextual Info: ITD50N04S4L-07 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS on ,max 7.2 mΩ ID 50 A Features • Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

p-ch mosfet smd MARKING code A

Abstract: Diode SMD SJ 66A IRF7507 smd diode MARKING F6 p-ch mosfet smd MARKING code 1 A smd diode F6 DIODE SMD MARKING CODE gi smd marking code 21b diode smd code F6
Contextual Info: International S Rectifier PD 9.1269C IRF7507 PRELMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching