6685 Search Results

sm 0038 receiver

Contextual Info: 1 9 -23 98 : R ev 1 :7 /9 3 Ultra-Fast ECL-Output Com parato r with Latch Enable _ F e a t u r e s ♦ 1.3ns Propagation Delay The d e v ic e is p in -c o m p a tib le w ith th e A D 9 6 8 5 and Am 6685, but exceeds their AC characteristics.

MFP20

Abstract: 3007B 3036C DIP18 DIP-18 LC7454A LC7454M
Contextual Info: Ordering number : ENN*6685 CMOS IC LC7454A/M CMOS Data Slicer Preliminary Overview The LC7454A/M is a data slicer IC for the Index Plus + signals. The LC7454A/M extracts the Caption and the Index Plus + data form the Vertical Blanking Period of the TV signal and send it out to the decoder IC Usually Microcomputer .

Contextual Info: Ordering number : ENN*6685 CMOS IC LC7454A/M CMOS Data Slicer Preliminary Overview The LC7454A/M is a data slicer IC for the Index Plus + signals. The LC7454A/M extracts the Caption and the Index Plus + data form the Vertical Blanking Period of the TV signal and send it out to the decoder IC Usually Microcomputer .

3036C

Contextual Info: Ordering number : ENN*6685 CMOS IC LC7454A/M CMOS Data Slicer Preliminary Overview The LC7454A/M is a data slicer IC for the Index Plus + signals. The LC7454A/M extracts the Caption and the Index Plus + data form the Vertical Blanking Period of the TV signal and send it out to the decoder IC Usually Microcomputer .

66850

Contextual Info: MITSUBISHI <DIGITAL ASSP> 66850J/FP, 66851 J/FP 66852J/FP, 66853J/FP SRAM TYPE FIFO MEMORY PIN CONFIGURATION TOP VIEW DESCRIPTION Cyj M 66850/851/852/853 are very high-speed and clock synchronous FIFO (First-ln,First-O ut) m em ories fabricated by high-speed CMOS

2N4300

Contextual Info: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc

Contextual Info: ASP-66853-01 r MAX TOE EITHER DIRECTIO N .6 6 9 2 9 ± .0 1 0 ( j1 5 .0 3 9 3 7 [ 1 . 0 0 0 ] REF .1 2 4 [ 3 . 1 5 ] REF s POSITIO NS + .1 7 8 [ 4 . 5 1 ] [1 7 .0 0 0 ± .2 5 ] 2] x .0 3 9 3 7 [1 .0 0 0 ]}) * -.6 1 7 [ 1 5 . 6 7 ] R E F -

XG636

Abstract: HD153119 HD66106 HD66850F
Contextual Info: H 66850F-Color L C D Interface Engine CLINE Description Features T he H D 66850F CL IN E in te rfa c e co n tro ller converts multi-color video signals for CRT display into color or monochrome LCD data. • • This device enables an LCD system to replace a

Contextual Info: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.5 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): (Without DC-DC converter) AWT6628A • 40 % @ POUT = +28.9 dBm • 26 % @ POUT = +17 dBm • 17 % @ POUT = +13.5 dBm

ALT6712R

Abstract: ALT6712
Contextual Info: HELP4 TM ALT6712 UMTS700 Bands 12 & 17 LTE Linear PAM Data Sheet - Rev 2.5 FEATURES • LTE Compliant • 4th Generation HELPTM technology • High Efficiency (LTE MPR = 0 dB): • 34 % @ POUT = +27.5 dBm • 17 % @ POUT = +16 dBm • 10 % @ POUT = +6 dBm

toko balun

Contextual Info: ARA2004 Address-Programmable Reverse Amplifier with Step Attenuator Data Sheet - rev 2.2 features • Low cost integrated amplifier with Step Attenuator • Attenuation Range: 0 - 59 dB, adjustable in 1 dB increments via a 3-wire Serial Control • Meets DOCSIS distortion requirements at a +60

Contextual Info: AWT6309 HELP2TM AWS/KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module Data Sheet - Rev 2.5 FEATURES • InGaP HBT Technology • High Efficiency: • 40 % @ +28 dBm output • 22 % @ +17 dBm output • Low Quiescent Current: 15 mA • Low Leakage Current in Shutdown Mode: <1 µA

6625A

Abstract: c111
Contextual Info: AWT6625A HELP4 UMTS800 Band 5 WCDMA, CDMA Multimode PAM TM Data Sheet - Rev 2.6 FEATURES • Multimode (HSPA, EVDO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99): • 41 % @ POUT = +28.6 dBm • 27 % @ POUT = +17 dBm • 17 % @ POUT = +13.5 dBm

6307r

Contextual Info: HELP2 AWT6307R Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module TM Data Sheet - Rev 2.2 FEATURES • InGaP HBT Technology • High Efficiency: • 40 % @ +28 dBm output • 21 % @ +16 dBm output • Low Quiescent Current: 15 mA AW T 630 • Low Leakage Current in Shutdown Mode: <1 µA

UMTS1900

Contextual Info: AWT6632 HELP3DC UMTS1900 Band 2 LTE/WCDMA/CDMA Linear PA Module TM DATA SHEET - Rev 2.1 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE Compliant • 3rd Generation HELPTM technology • High Efficiency: (R99 waveform) • 40 % @ POUT = +29 dBm • 22 % @ POUT = +16.75 dBm

Contextual Info: Multi-Mode HELP4 TM AWT6624 UMTS1700 Band 4+9+3+10 WCDMA/CDMA Linear PAM Data Sheet - Rev 2.8 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): 39 % @ POUT = +28.3 dBm 36% @ POUT = +17 dBm

LPD200P70-2

Abstract: LPD200-P70-2 LPD200P70 LPD200-P70-1 LPD200 MIL-HDBK-263 maximum idss transistor Indium LPD200-P70
Contextual Info: LPD200P70 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

aca2407

Abstract: 1008CS-681XKBC GRM39X7R103K50V P5275-ND
Contextual Info: ACA2407 750/870/1000 MHz CATV Power Doubler Line Amplifier Data Sheet - Rev 2.1 FEATURES • 1 GHz Specified Performance • 21.5 dB Gain • Very Low Distortion • Excellent 75 Ω Input and Output Match • Stable with High VSWR Load Conditions • Monolithic Design for Consistent Performance

ACD0900S3C

Abstract: 1SV245 ACD0900
Contextual Info: A ACD0900S3C VHF/UHF CATV/TV Tuner Downconverter DATA SHEET - Rev . 0 FEATURES • Integrated Monolithic Downconverter • 8 dB Noise Figure • 10 dB Conversion Gain • High Linearity • Small Size • Low Cost • High Reliability DESCRIPTION The ACD0900 MMIC is a high performance downconverter

balun 75-ohm to 120-ohm

Abstract: 500w power amplifier pcb diagram 10 watt amplifier chassis schematic diagram pcb 10 watt power amplifier chassis schematic diagram 135CT050-3D3 1320011 JEDEC-22-A101 T-PLI 200 thermagon equivalent diode for 8724 Thermagon tpli 215
Contextual Info: Application Note ACA0861 - A, B, C, D 750/860 MHz CATV Line Amplifiers Rev 2 Figure 1. A basic cascade circuit topology, shown in Figure 2, is used for each amplifier. This circuit approach meets the demanding performance requirements of low distortion and low noise figure.

256 QAM

Abstract: ADA1200GS24Q1 311 SOT89
Contextual Info: ADA1200 Linear Amplifier PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • 12 dB Gain • 50 to 1000 MHz Frequency Range • Noise Figure: 2.3 dB • Single +5 V Supply • Small SOT-89 Package • RoHS Compliant/Lead-free APPLICATIONS • Low Noise Amplifier for CATV Set-Top Boxes

Contextual Info: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.2 FEATURES • InGaP HBT Technology • High Efficiency Cell Band : • 37.5 % @ POUT = +27.6 dBm • 23 % @ POUT = +16 dBm • 11.5 % @ POUT = +10 dBm AW

Contextual Info: HELP3E AWU6616 Dual-band 1 & 5, 6 CDMA/WCDMA 3.4 V Linear Power Amplifier Module TM Data Sheet - Rev 2.3 FEATURES • InGaP HBT Technology • High Efficiency R99 : • 37 % @ POUT = +28.1 dBm (Band 1) • 38 % @ POUT = +28.7 dBm (Band 5, 6) • 24 % @ POUT = +16.5 dBm

JS-001-2010

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System