6577 Search Results

Contextual Info: him RMS DATA SHEET_ March 1994 HM 65779 8 Kx 9 HIGH SPEED CMOS SRAM FEATURES . . . FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max LOW POWER CONSUMPTION ACTIVE : 850 mW (max) STANDBY :1 25 mW (max) 300 AND 330 MILS WIDTH PACKAGE

TMC transformer

Abstract: IEC-950 75-uH 6577
Contextual Info: SPECIFICATION SHEET 65770 PART NO SPECIFICATIONS: Patent Pending REV A 6577 TMC YYWW patent pending Leads to be co-planar within .004 [0.1mm] Inductance: 10 kHz, 0.1VRMS 1-2+3-4: 400 uH ± 5% DCR: 1-3 : 0.4 ohms max (2-4): 0.4 ohms max (8-6): 0.5 ohms max

Contextual Info: SKKD 260 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules ./01 .//1 . >77 6 77 6!77 6@77 "677 . ;77 6"77 6577 677 "777 2 %. 4 "7 % 8   6;7< , 4 ;! =&: 0?+ "7'7; 0?+ "7'6" 0?+ "7'65 0?+ "7'6 0?+ "7'"75 " 77 ""77 0?+ "7'""5

sae 1010

Abstract: astm a105 BALL VALVE BALL VALVE DATA SHEET a105
Contextual Info: Issued September 2001 314-2113 Data Pack G M10S Ball Valve Data Sheet RS stock number 365-6577, 365-6583, 365-6599 Description Materials M10S is a three piece body ball valve designed for steam and other industrial fluids for services ranging from vacuum to the higher temperatures and pressures.

UU-40

Abstract: Igus M250
Contextual Info: part no 7 03-6553 7 03-6565 7 03-6577 7 03-6589 703-6590 703-6607 703-6619 703-6620 7 03-6632 703-6644 d1 Dll AFTER 3RESSFIT MAX S. MIN CLEARANCE USING A H9 SHAFT. 06 +0.030+0.105 0.030-0.135 08 +0.040+0.130 0.040-0.166 +0,040+0,130 0.040-0.166 +0.050+0.160

Contextual Info: SKKD 260 SEMIPACK 3 Rectifier Diode Modules ./01 .//1 . >77 6 77 6!77 6@77 "677 . ;77 6"77 6577 677 "777 2 %. 4 "7 % 8   6;7< , 4 ;! =&: 0?+ "7'7; 0?+ "7'6" 0?+ "7'65 0?+ "7'6 0?+ "7'"75 " 77 ""77 0?+ "7'""5 Symbol Conditions Values

Matra-Harris Semiconductor

Abstract: Matra-Harris 40 pin Matra-Harris Matra Semiconductor hm65770 D-8057
Contextual Info: HM 65770 N A IR A ' HARRIS SEMICONDUCTOR 4K x 4 CMOS STATIC RAM 0 A Jl- jr MAY 1986 005625 P iR E U [» M W 7 6 i f Ax Q j? Pinout Features • HIGH SPEED, FAST ACCESS TIME : 35/45 ns • ASYNCHRONOUS • OPERATING CURRENT : 90 mA max • MULTIPLEXED DATA INPUT AND OUTPUT

dvi-d 24 pin diagram

Abstract: TOP-31 MN65771F QFH048-P-0707
Contextual Info: Panasonic Other MOS LSIs 65771F Low Power 10-Bit 5 V CMOS A/D Converter for Image Processing • Overview Pin Assignment The M N 65771F is a high-speed 10-bit CM OS analogto-digital converter for im age processing applications. It uses a h alf flash structure based on chopper co m ­

Contextual Info: Mirimi • Advance Inform ation W f ln lM v September 1989 DATA SHEET_ HM 65772 4 kx 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN

2N6578

Abstract: 2N6576
Contextual Info: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 5 76 2 N 6577 2 N 65 78 NPN Silicon Power Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • •

semikron skkD

Contextual Info: SKKD 260 SEMIPACK 3 Rectifier Diode Modules ./01 .//1 . >77 6 77 6!77 6@77 "677 . ;77 6"77 6577 677 "777 2 %. 4 "7 % 8   6;7< , 4 ;! =&: 0?+ "7'7; 0?+ "7'6" 0?+ "7'65 0?+ "7'6 0?+ "7'"75 " 77 ""77 0?+ "7'""5 Symbol Conditions Values

NPN Transistor 2N3055

Contextual Info: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N 6576 2N 6577 2N 6578 NPN Silicon Pow er Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •

D-8057

Contextual Info: HM 65770 i l /MATRA.- HARRIS SEMICONDUCTOR M 4K x 4 CMOS STATIC RAM O .W lC a ' o PFSELOSlfllMMW MAY 1986 005625 r 6 i r Features Description The HM 65770 is a 16384 bit static Random Access Memory organized as 4096 words by 4 bits using CMOS technology and operates from the single 5V supply.

Contextual Info: Advance Information lllln llll I W T DATA SHEET _ M September 1989 HM 65770 4 KX 4 HIGH SPEED CMOS SRAM WITH OUTPUT ENABLE FEATURES . FAST ACCESS TIME MILITARY : 25/35/45 ns max COMMERCIAL : 20/25/35/45 ns (max) . LOW POWER CONSUMPTION ACTIVE : 385 mW (max)

Contextual Info: SKKD 260 SEMIPACK 3 Rectifier Diode Modules ./01 .//1 . >77 6 77 6!77 6@77 "677 . ;77 6"77 6577 677 "777 2 %. 4 "7 % 8   6;7< , 4 ;! =&: 0?+ "7'7; 0?+ "7'6" 0?+ "7'65 0?+ "7'6 0?+ "7'"75 " 77 ""77 0?+ "7'""5 Symbol Conditions Values

Contextual Info: SKKD 260 SEMIPACK 3 1 Rectifier Diode Modules /0,1 /001 / >77 6 77 6!77 6@77 "677 / ;77 6"77 6577 677 "777 2)%/ 4 "7 % 8   6;7< - 4 ;! =&: ,?+ "7'7; ,?+ "7'6" ,?+ "7'65 ,?+ "7'6 ,?+ "7'"75 " 77 ""77 ,?+ "7'""5 Symbol Conditions Values

Contextual Info: SKKD 260 SEMIPACK 3 Rectifier Diode Modules ./01 .//1 . >77 6 77 6!77 6@77 "677 . ;77 6"77 6577 677 "777 2 %. 4 "7 % 8   6;7< , 4 ;! =&: 0?+ "7'7; 0?+ "7'6" 0?+ "7'65 0?+ "7'6 0?+ "7'"75 " 77 ""77 0?+ "7'""5 Symbol Conditions Values

7D75

Contextual Info: SKKD 260 SEMIPACK 3 new Rectifier Diode Modules /012 /002 / >77 6 77 6!77 6@77 "677 / ;77 6"77 6577 677 "777 3*%/ 4 "7 % 8   6;7< - 4 ;! =&: 1?, "7'7; 1?, "7'6" 1?, "7'65 1?, "7'6 1?, "7'"75 " 77 ""77 1?, "7'""5 Symbol Conditions Values

INVC303

Contextual Info: 6577038 INVC303 FL BACKLIGHT INVERTER UNIT DELIVERY SPECIFICATIONS

Contextual Info: September 1989 Advance Information HM 65779 DATA SHEET 8 KX 9 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 35/45/55 ns max LOW POWER CONSUMPTION ACTIVE : 850 mW (max) STANDBY : 125 mW (max) 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS

Contextual Info: SNAP RIVETS 770-6581 Part NO. Chassis Extract. Total Mtg.Hole Force Folding Dia. Lb. Thickness 770-6575-10 † .102-.106 11.0 min. .039-.079 770-6576-10 † .102-.106 11.0 min. .079-.118 770-6577-10 † .102-.106 11.0 min. .134-.169 770-6578-10 † .122-.126 17.6 min. .039-.079

ubee max

Abstract: NJU6577 NJU6577S NJUB577 SEG22 KJG V2 PS3760
Contextual Info: 6577 5 3 4 * ^ • m h t f y 7 8 O ' f e ? * i / ^ L C D > h t t i * K J7 " I ' / * s ■ N JU 6577I*. W 4, 240t* r i W 7 7 r ; * g 5 F : j W i£ t '»h W L C D K W h w T?, -»RAH. C P lM > » - 7 i« B I# . M >/M * M ' V W ^T? 8t*';h-/\, 7l/il', £ f d i W 7 J M > K 7 i « l w T , C P U f r e > &

TEL11C

Abstract: HM65789 hm65779
Contextual Info: electronic June 1992 HM 65779 HI-REL DATA SHEET 8kX 9 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME : 35/45/55 ns . TTL COMPATIBLE INPUTS AND OUTPUTS LOW POWER CONSUMPTION ACTIVE : 850 mW max STANDBY : 125 mW (max) . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN

Contextual Info: M ill DATA SHEET_ HM 65779 8 Kx 9 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max TTL COMPATIBLE INPUTS AND OUTPUTS LOW POWER CONSUMPTION ACTIVE : 850 mW (max) STAN DB Y: 125 mW (max) CAPABLE OF WITHSTANDING GREATER THAN