650V Search Results

Ignition Driver IC

Abstract: programmable ignition control PT5615 ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition
Contextual Info: PT5615 Ballast Control IC DESCRIPTION The PT5615 is a ballast control IC, with the 650V half-bridge driver and full protections, designed to drive all types of fluorescent lamps. The features such as programmable preheat time and frequency, programmable and precise run frequency, self-adapting

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated

Contextual Info: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX2 Series ●General The PWM type DC/DC converter BM2PXX2 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX2 supports both isolated and non-isolated

STP9NC65

Abstract: STP9NC65FP
Contextual Info: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

ap2764a

Contextual Info: AP2764AP-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 1.1Ω ID 9A G S Description AP2764A series are specially designed as main switching devices for

09N70P

Abstract: 09n70 AP09N70P-A 09N7
Contextual Info: AP09N70P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ 100% Avalanche Test D BVDSS 650V RDS ON 0.75Ω ▼ Fast Switching ▼ Simple Drive Requirement GG ID ▼ RoHS Compliant 9A S S Description The TO-220 package is widely preferred for all commercial-industrial

STW45NM60

Contextual Info: STW45NM60 N-CHANNEL 650V @Tjmax - 0.09Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM60 VDSS @Tjmax RDS(on) ID 650V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

Contextual Info: MB09N65B0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB09N65B is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter

5N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 4.5A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION „ The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

7n65f

Abstract: UTC7N65 TO-220F2 7n65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

UTC7N65

Abstract: 7n65 7N65L-TQ2-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N65A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand

586A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65Z Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: SIK04N65 4A , 650V , RDS ON 2.6Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free 2 TO-262(I -Pack) DESCRIPTION The SIK04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

SSE12N65SL

Abstract: MosFET
Contextual Info: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

fgh75t65

Abstract: FGH75T65UPD fgh75t65up fgh75t
Contextual Info: FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description 175oC • Maximum Junction Temperature : TJ = Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS and Digital Power Generator

mosfet 600V 16A

Abstract: FCP16N60 FCPF16N60
Contextual Info: SuperFETTM FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

AP10N70

Contextual Info: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high