Datasheet Archive: 5N65 datasheets

5N65 Result Highlights (4)

Part	Manufacturer	Description	Download
TK065N65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TO-247	Datasheet
TK095N65Z5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-247	Datasheet
TW015N65C	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 650 V, 100 A, 0.021 Ω@18 V, TO-247	Datasheet
TK115N65Z5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 24 A, 0.115 Ω@10 V, High-speed diode, TO-247	Datasheet

5N65 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
5N65	Shenzhen Heketai Electronics Co Ltd	N-channel MOSFET with 650 V drain-source voltage, 4.5 A continuous drain current, low on-state resistance of 2.5 ohms at 10 V gate-source voltage, designed for high-speed switching in power supplies and DC-DC converters.	Original	PDF
5N65A	AK Semiconductor	5A 650V N-channel enhancement-mode MOSFET with typical on-resistance of 2.0 ohms at VGS = 10V, available in TO-220AB, TO-220F, TO-263, TO-252, and TO-251 packages, featuring low gate charge and high dv/dt capability.	Original	PDF
CWS15N65AF	Wuhan Xinyuan Semiconductor Co Ltd	CWS15N65A is a 650V N-channel super junction power MOSFET with 280 mΩ RDS(on) and 15A continuous drain current, available in TO-220, TO-220F, TO-252, and TO-263-2L packages.	Original	PDF
HCKW75N65BH2	VANGUARD	650V 75A IGBT in TO-247 package featuring low Vcesat, high junction temperature tolerance, soft switching Trench-FS technology, integrated fast recovery diode, and low switching losses for high-frequency applications.	Original	PDF
SLP_F5N65SV	Maplesemi	680V N-Channel MOSFET with 5A continuous drain current, 2.2 ohm typical RDS(on) at VGS = 10V, low gate charge of 13nC, and 100% avalanche tested for high reliability in power switching applications.	Original	PDF
HCKW75N65FH2	VANGUARD	650V 75A IGBT with Trench-FS technology, low Vcesat of 1.80V at 25°C, integrated fast recovery diode, TO-247 package, suitable for high-frequency switching applications.	Original	PDF
HCKT75N65BH2D	VANGUARD	650V 75A IGBT in TO-247 package with low VCEsat, high junction temperature rating, integrated fast recovery diode, and optimized for high-frequency switching applications.	Original	PDF
HCKW75N65GH2	VANGUARD	650V 75A IGBT with Trench-FS technology, low Vce(sat) of 1.80V at 25°C, integrated SiC diode, TO-247 package, suitable for high-frequency switching applications.	Original	PDF
CXG75N65HSZ	CREATEK Microelectronics	650V 75A IGBT in TO-247 package with typical VCE(sat) of 2.3V at 75A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and low switching losses for motor drives, UPS, and inverter applications.	Original	PDF
CXG75N65HSZU	CREATEK Microelectronics	650V 75A IGBT in TO-247 package with typical VCE(sat) of 2.3V at 75A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and low switching losses for motor drives, UPS, and inverter applications.	Original	PDF
HCKZ75N65BH2	VANGUARD	650V 75A IGBT with Trench-FS technology, low Vcesat of 1.80V, integrated fast recovery diode, TO-247-4L package, suitable for high-frequency switching applications such as inverter power supplies, UPS, and PV systems.	Original	PDF
HCKD5N65BM2	VANGUARD	650V 5A IGBT in TO-252 package with low Vcesat of 1.45V, featuring integrated fast recovery diode, Trench-FS technology, and high junction temperature rating up to 150°C for motor and fan driver applications.	Original	PDF
CWS5N65ADR	Wuhan Xinyuan Semiconductor Co Ltd	650V N-Channel Super Junction MOSFET with 850 mΩ RDS(on), 5A continuous drain current, low gate charge, and fast switching for high-efficiency power applications in TO-251, TO-252, and TO-220F packages.650V N-Channel Super Junction MOSFET with 850 mOhm RDS(on), 5A continuous drain current, low gate charge, and fast switching for high-efficiency power applications.	Original	PDF
HCKZ75N65GH2	VANGUARD	650V 75A IGBT with Trench-FS technology, low VCEsat, integrated SiC diode, TO-247-4L package, suitable for high-frequency switching applications.	Original	PDF

SLP_F5N65C	Maplesemi	650V N-Channel MOSFET with 4.5A continuous drain current, 2.3 ohm typical RDS(on) at VGS = 10V, low gate charge of 16nC, and high avalanche ruggedness, suitable for high-efficiency power conversion applications.	Original	PDF
SLU_D5N65SV	Maplesemi	5A, 650V N-channel MOSFET with RDS(on) of 2.2 ohm at VGS = 10V, low gate charge of 13nC, high ruggedness, fast switching, and 100% avalanche tested for high-efficiency power applications.	Original	PDF
CWS5N65AF	Wuhan Xinyuan Semiconductor Co Ltd	650V N-Channel Super Junction MOSFET with 850 mΩ RDS(on), 5A continuous drain current, low gate charge, and fast switching for high-efficiency power applications in TO-251, TO-252, and TO-220F packages.	Original	PDF
SLF5N65S	Maplesemi	650V N-Channel MOSFET with 4.5A continuous drain current, 2.5 ohm maximum RDS(on) at VGS = 10V, low gate charge of 13nC, and fast switching capability for high-efficiency power applications.	Original	PDF
CWS15N65AC	Wuhan Xinyuan Semiconductor Co Ltd	CWS15N65A is a 650V N-channel super junction power MOSFET with 280 mΩ RDS(on) and 15A continuous drain current, available in TO-220, TO-220F, TO-252, and TO-263-2L packages.	Original	PDF
SLP_F5N65S	Maplesemi	650V N-Channel MOSFET with 4.5A continuous drain current, 2.6 ohm RDS(on) at 10V VGS, low gate charge of 13nC, suitable for high-efficiency power supplies and active power factor correction applications.	Original	PDF

5N65 Price and Stock

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STMicroelectronics STL15N65M5 MOSFET N-CH 650V 10A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STL15N65M5	Cut Tape	5,185		1	1 $3.54 10 $2.31 100 $1.62 1000 $1.41 10000 $1.41	Buy Now
	STL15N65M5	Digi-Reel	5,185		1	1 $3.54 10 $2.31 100 $1.62 1000 $1.41 10000 $1.41	Buy Now
	STL15N65M5	Tape & Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.15	Buy Now
Avnet Americas	STL15N65M5	Tape & Reel	3,000	14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.20	Buy Now
STMicroelectronics	STL15N65M5		2,553		1	1 $3.35 10 $2.23 100 $1.59 1000 $1.38 10000 $1.38	Buy Now
Avnet Silica	STL15N65M5		3,000	15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	STL15N65M5				1	1 $1.85 10 $1.85 100 $1.85 1000 $1.85 10000 $1.85	Buy Now
Vishay Intertechnologies SIHH125N65E-T1-GE3 E SERIES POWER MOSFET 650 V (D-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHH125N65E-T1-GE3	Tape & Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $3.57	Buy Now
Mouser Electronics	SIHH125N65E-T1-GE3		2,750			1 $8.17 10 $5.63 100 $4.38 1000 $4.38 10000 $3.57	Buy Now
Newark	SIHH125N65E-T1-GE3	Cut Tape	100		1	1 $9.73 10 $7.52 100 $6.54 1000 $6.22 10000 $6.22	Buy Now
Rutronik	SIHH125N65E-T1-GE3	Tape & Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $4.01	Buy Now
Infineon Technologies AG AIKB15N65DH5ATMA1 IGBT NPT 650V 15A TO263-3-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AIKB15N65DH5ATMA1	Tape & Reel	2,000		1,000	1 - 10 - 100 - 1000 $1.71 10000 $1.71	Buy Now
Rochester Electronics	AIKB15N65DH5ATMA1		6,000		1	1 - 10 - 100 $1.71 1000 $1.53 10000 $1.44	Buy Now
Infineon Technologies AG IKW75N65EH5XKSA1 IGBT TRENCH 650V 90A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW75N65EH5XKSA1	Tube	1,460		1	1 $6.25 10 $6.25 100 $3.55 1000 $2.53 10000 $2.47	Buy Now
Avnet Americas	IKW75N65EH5XKSA1	Tube	360	19 Weeks	30	1 - 10 - 100 $2.92 1000 $2.64 10000 $2.64	Buy Now
Rutronik	IKW75N65EH5XKSA1	Tube	60		30	1 - 10 - 100 $3.49 1000 $3.15 10000 $3.15	Buy Now
Chip One Stop	IKW75N65EH5XKSA1	Tube	248	0 Weeks, 1 Days	1	1 $3.02 10 $3.02 100 $3.02 1000 $3.02 10000 $3.02	Buy Now
EBV Elektronik	IKW75N65EH5XKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IBS Electronics	IKW75N65EH5XKSA1		4,770		30	1 - 10 - 100 $4.19 1000 $4.03 10000 $3.95	Buy Now
Win Source Electronics	IKW75N65EH5XKSA1		46,140			1 - 10 - 100 $1.57 1000 $1.34 10000 $1.34	Buy Now
onsemi NTB095N65S3HF MOSFET N-CH 650V 36A D2PAK-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	NTB095N65S3HF	Digi-Reel	800		1	1 $7.75 10 $5.26 100 $4.02 1000 $4.02 10000 $4.02	Buy Now
	NTB095N65S3HF	Cut Tape	800		1	1 $7.75 10 $5.26 100 $4.02 1000 $4.02 10000 $4.02	Buy Now
	NTB095N65S3HF	Tape & Reel	800		800	1 - 10 - 100 - 1000 $3.29 10000 $3.29	Buy Now
Newark	NTB095N65S3HF	Cut Tape	776		1	1 $7.99 10 $6.07 100 $5.44 1000 $4.71 10000 $4.70	Buy Now
Richardson RFPD	NTB095N65S3HF				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	NTB095N65S3HF			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	NTB095N65S3HF				1	1 $5.33 10 $5.33 100 $5.33 1000 $5.33 10000 $5.26	Buy Now

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5N65 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5N65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 4.5A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.	Original	O-252 O-251 O-220 QW-R502-592 5N65	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.	Original	QW-R502-592	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.	Original	QW-R502-592	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65K Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-220F The UTC 5N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche	Original	5N65K O-220F 5N65K O-220F2 5N65KL-TF2-T QW-R502-871	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65Z Preliminary Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche	Original	5N65Z 5N65Z QW-R502-910	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N65K Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche	Original	5N65K 5N65K O-220F QW-R502-871	PDF
SN756 Abstract: JQ12 TEXAS 5ti U274A SN65554 Contextual Info: SN6555$, SN65554, SN75553, SN75554 ELECTROLUMINESCENT COLUMN DRIVERS _ S L O S H ! ! * - D 2 7 4 4 -, M ftF lC H 1 3 S 3 - Each D evice D rives 33 Electrodes REW S E P M A R C H 1¥ S J SMTSSM, r ,H PACKAGE OO-V Output Voltage Swing Capability	OCR Scan	SN65554, SN75S53, SN75554 15-ma 3N65553. SN75553, SN75554 TheSN65554 SN756 JQ12 TEXAS 5ti U274A SN65554	PDF
66c4 Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 1 A9C !9E798CB9845F36 3E92D3645A"2 A9EC !39#7598CB8#74576$92D3645A"2 C2 36+436,6E234286544 (-./606( 1-623460656,61-67606&5 8819365:353 % ;C93*2932	Original	23456784539A6BCDEF 345674F 976BCDEF 9845F 3E92D3645 598CB 92D3645 268AB63C 5356E1324 2368AB63C 66c4	PDF
Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 11 A9C 9E798CB9845F363E92D3645A!2 A9EC 39"7598CB8"74576#92D3645A!2 C2 36+436,6E23 4286544 (-./606( 1-623460656,61-676065 8819365:353 $ ;C93* 2932	Original	23456784539A6BCDEF 345674F 976BCDEF 9845F 3E92D3645 598CB 92D3645 268AB63C 5356E1324 2368AB63C	PDF
Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 11 A 9C!"9E798CB9845F36!3E92D3645 A#2 A 9EC!"39$7598CB 8$74576%92D3645 A#2 C2 36+436,6E234286544 (-./606( 1-6234606&56,61-67606 5 8819365:353 & ;C93*2932	Original	23456784539A6BCDEF 345674F 976BCDEF 9845F 3E92D3645 598CB 92D3645 268AB63C 5356E1324 2368AB63C	PDF
Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 1 A9C !9E798CB9845F36 3E92D3645A"2 A9EC !39#7598CB8#74576$92D3645A"2 C2 36+436,6E23 4286544 (-./606( 1-623460656,61-67606!5 8819365:353 % ;C93* 2932	Original	23456784539A6BCDEF 345674F 976BCDEF 9845F 3E92D3645 598CB 92D3645 268AB63C 5356E1324 2368AB63C	PDF
8N65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產品變更通知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices	Original	IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65	PDF
E82F Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 11 A9C9E798CB9845F363E92D3645A 2 A9EC39!7598CB8!74576"92D3645A 2 C2 36+436,6E23 4286544 (-./606( 1-623460656,61-676065 8819365:353 # ;C93* 2932	Original	23456784539A6BCDEF 345674F 976BCDEF 9845F 3E92D3645 598CB 92D3645 268AB63C 5356E1324 2368AB63C E82F	PDF
6K342 Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 1 A9C9E798CB9845F363E92D3645A 2 A9EC39!7598CB8!74576"92D3645A 2 C2 36+436,6E234286544 (-./606( 1-623460656,61-67606&5 8819365:353 # ;C93*2932	Original	23456784539A6BCDEF 345674F 976BCDEF 9845F 3E92D3645 598CB 92D3645 268AB63C 5356E1324 2368AB63C 6K342	PDF

LVDS Cable STP Abstract: slla053 784D TM1449 SLLDE01 prbs generator abstract SDZAE03 SDZAE06 568A wiring diagram 5n65 Contextual Info: Performance of LVDS With Different Cables Application Report August 1999 Mixed Signal Products SLLA053 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information	Original	SLLA053 SDZAE03) SLLDE01C) SDYDE01B) SLYDE05) ANSIlTIA/EIA-568-A) DVB-PI-232 TM1449 LVDS Cable STP slla053 784D TM1449 SLLDE01 prbs generator abstract SDZAE03 SDZAE06 568A wiring diagram 5n65	PDF
DP 704c Abstract: Q1032 Q19C tv nei schematics SN7558 DLS FT 031 cksp 8 pin ht q20 4342414 16265 S Contextual Info: SNC5559, SHG55G0, SN75559, SN7SSG0 ELECTROLUMINESCENT DISPLAY COLUMN DRIVERS ADVANCE INFORMATION 02947, APfilL la e e -R E V lS E tJ OCTOBER 1 9ÄÖ BNGBGG9. 5fJ76&63 N DUAL-IN-LINE PAOKiiîÇ^- * 5 0 -V Ramped VCC21 Totem-Pofa Outputs t Energy Recovery System Compatible	OCR Scan	SNG5559, SH655G0, SN75559, SN65559, SN66660, SN7B558, SW55560 SN75559ROLUMINESCENT T-52-13-05 7E36B- DP 704c Q1032 Q19C tv nei schematics SN7558 DLS FT 031 cksp 8 pin ht q20 4342414 16265 S	PDF

5N65 Search Results

5N65 Result Highlights (4)

5N65 Datasheets (22)

5N65 Price and Stock

STMicroelectronics STL15N65M5

Vishay Intertechnologies SIHH125N65E-T1-GE3

Infineon Technologies AG AIKB15N65DH5ATMA1

Infineon Technologies AG IKW75N65EH5XKSA1

onsemi NTB095N65S3HF

5N65 Datasheets Context Search

5N65

SN756

66c4

8N65

E82F

6K342

LVDS Cable STP

DP 704c