64KBX7 Search Results

Contextual Info: INDEX ADVANCED INFORMATION MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

Macronix

Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29F200C & MX29F400C Flash Families from Spansion Am29F200B & Am29F400B Memory Devices. Contents Introduction. 2

Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29LV160D

Abstract: S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D
Contextual Info: APPLICATION NOTE Migrating to the Macronix MX29LV400C/800C/160D/320D Flash Families from Spansion S29AL004D/008D/016D/032D Devices. Contents Introduction. 2

MX29F004B

Abstract: MX29F004T SA10 29f004t
Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

29f004t

Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

MX29F004B

Abstract: MX29F004T SA10
Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

29F004C-90

Contextual Info: ADVANCED INFORMATION MX29F004CT/CB 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fully compatible with MX29F004T/B device • Fast access time: 70/90/120ns

Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

Contextual Info: MX29F004T/B 4M-BIT [512KX8] CMOS FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current 5MHz

S29AS016J70

Abstract: 64 fortified bga S29GL128P S29GL128P90 EN29LV400A EN29LV800C EN29SL800 S29GL064N90 S29AL008D S29AL016D
Contextual Info: Density Org. 4M (512kx8 / 256Kx16) Spansion Part Number Eon Compatible Part Number ) 55/70/90=Speed, (T/B/M)=(TSOP/FBGA/SOP), (A/F)=(Pb/Pb free) (01/02)=(2.7~3.6V Top/Bottom) (R1/R2)=(3.0~3.6V Top/Bottom)