64K ROM Search Results

27C1100

Abstract: 27c1024-55 27C1024 MX27C1100 ups vh 2000 27C110 27C1024 equivalent MX27C1024QC-55
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin out • 128K x 8 or 64K x 16 organization(MX27C1100, ROM • • • • • Operating current: 40mA • Standby current: 100uA • Package type:

27c1024

Abstract: 27C1024 equivalent EPROM sop 40 EPROM 40PIN 27C1100 MX27C1100
Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

MX27C1100

Contextual Info: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

z8 64k series

Abstract: UM016802-0504 Z8F64210100ZDP Z8F6423 PLCC socket pin configuration Z8F642 LQFP-44 Package
Contextual Info: Z8 Encore! 64K Series In-Circuit Emulator UM016802-0504 User Manual Introduction The ZiLOG Z8 Encore!® 64K Series In-Circuit Emulator ICE provides Z8 Encore! 64K Series MCU emulation with a trace and event system for program debugging using ZDS II development tools.

MN101E31D

Contextual Info: MN101E31 Series MN101E31D Type MN101E31G 64K 128K RAM byte 4K 6K Minimum Instruction Execution Time MN101EF31G FLASH ROM (byte) Package (Lead-free) MN101EF31D Mask ROM Internal ROM type 64K 128K 4K 6K LQFP080-P-1414A LQFP080-P-1414A (ES (Engineering Sample)

1414A

Abstract: MN101C66G LQFP080-P-1414A MN101C66D MN101CF66G MN101CP66D QFP084-P-1818E
Contextual Info: MN101C66D, MN101C66G MN101C66D Type Mask ROM Internal ROM type ROM byte 64K RAM (byte) 2K Package (Lead-free) Minimum Instruction Execution Time MN101C66G 128K MN101CF66G MN101CP66D FLASH EPROM 64K 4K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering Sample) available),

Contextual Info: MN101C66 Series MN101C66D Type MN101C66G Mask ROM Internal ROM type ROM byte 64K 128K RAM (byte) 2K 4K MN101CF66G MN101CP66D FLASH EPROM 64K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering Sample) available), LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E

80C31 instruction set

Abstract: EXIF-91h
Contextual Info: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM

27C220

Abstract: 27C210 27C240 NM27C210
Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for

design of PROCESS CONTROL TIMER

Contextual Info: MN101E31 Series MN101E31D Type MN101E31G MN101EF31D Mask ROM Internal ROM type ROM byte 64K 128K 64K RAM (byte) 4K 6K LQFP080-P-1414A (ES (Engineering Sample) available) 4K Package (Lead-free) Minimum Instruction Execution Time MN101EF31G FLASH 128K 6K LQFP080-P-1414A

design of PROCESS CONTROL TIMER

Abstract: MN101EF31G MN101EF31D MN101E31D MN101E31
Contextual Info: MN101E31 Series MN101E31D Type ROM byte 64K RAM (byte) 4K Package (Lead-free) MN101E31G MN101EF31D Mask ROM Internal ROM type LQFP080-P-1414A (Under planning) Minimum Instruction Execution Time MN101EF31G FLASH 128K 64K 128K 6K 4K 6K LQFP080-P-1414A LQFP080-P-1414A

Contextual Info: MN101C66 Series MN101C66D Type MN101C66G Mask ROM Internal ROM type ROM byte 64K 128K RAM (byte) 2K 4K MN101CF66G MN101CP66D FLASH EPROM 64K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E Sample) available),

1414A

Abstract: LQFP080-P-1414A MN101C66D MN101C66G MN101CF66G MN101CP66D QFP084-P-1818E
Contextual Info: MN101C66 Series MN101C66D Type MN101C66G Mask ROM Internal ROM type ROM byte 64K 128K RAM (byte) 2K 4K MN101CF66G MN101CP66D FLASH EPROM 64K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E Sample) available),

27C210

Abstract: 27C220 27C240 NM27C210
Contextual Info: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for

1414A

Contextual Info: MN101C66 Series MN101C66D Type MN101C66G Mask ROM Internal ROM type ROM byte 64K 128K RAM (byte) 2K 4K MN101CF66G MN101CP66D FLASH EPROM 64K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E Sample) available),

1414A

Abstract: LQFP080-P-1414A
Contextual Info: MN101C66 Series MN101C66D Type MN101C66G Mask ROM Internal ROM type ROM byte 64K 128K RAM (byte) 2K 4K MN101CF66G MN101CP66D FLASH EPROM 64K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E Sample) available),

F3564

Abstract: F3564-25
Contextual Info: F3564 64K ROM FAIRCHILD A Schlumberger Company Advance Product Information Microprocessor Product Description Logic Symbol The Fairchild F3564 8192 x 8-bit 64K mask-program­ mable read-only memory (ROM) is designed for use in bus-organized systems requiring non-volatlle memory

Contextual Info: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM

Contextual Info: MN101C28 Series MN101C28A Type MN101C28C MN101C28D ROM byte 32K 48K RAM (byte) 1.5K 2K LQFP080-P-1414A, QFP084-P-1818E, TQFP080-P-1212D Package (Lead-free) MN101C28F MN101C28L MN101CP28D MN101CP28L Mask ROM Internal ROM type EPROM 64K 96K 4K 64K 10K LQFP080-P-1414A

2732 cmos eprom

Contextual Info: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8

27C280

Abstract: 27C220 NM27C210 27C210 27C240 C1996 J40BQ CMOS90
Contextual Info: NM27C210 1 048 576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM) It contains 1 048 576 bits configured as 64K x 16 bit It is offered in both erasable

26C1024

Abstract: MX26C1024A XX00H xx40h
Contextual Info: Introduction Selection Guide PRELIMINARY MX26C1024A FEATURES 1M-BIT 64K x 16 CMOS MULTIPLE-TIME-PROGRAMMABLE ROM • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% program/erase voltage