64K NMOS DYNAMIC RAM Search Results

NMOS DRAM

Abstract: KM4164BP KM4164 km4164b
Contextual Info: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor­

Contextual Info: in te i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories • Provides Refresh/Access Arbitration ■ Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers

RE 4TP

Abstract: 273tp 82C03
Contextual Info: in te i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories ■ Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers ■ Provides System Acknowledge and Trans­

2164 dynamic ram

Abstract: intel 8203 2164A 8202a intel microprocessor pin diagram 8202A intel 4002 8088 ram 256K pin diagram of intel IC 8203 diagram of IC 8203 Intel 2164
Contextual Info: in t e i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers Provides System Acknowledge and Trans­

MBB264A-18

Contextual Info: preliminary FUJITSU MOS Memories • MB8264A-12-W, MB8264A-15-W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W Is a 64K x 1 dynamic RAM intended for operation over the case temperature range -55*C to 110 *C. The part Is also

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

Contextual Info: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also

MC3480

Abstract: Dynamic Memory Refresh Controller MC3242A RA54 64k nmos dynamic ram M6800 nmos to ttl interface CASE-710
Contextual Info: INTERFACE CIRCUITS continued gïïû ^ Offifetfife}©© ©oû(o] ©©oüSd^D NMOS Memories to TTL Systems MULTIPLEXED 16-PIN RAM CONTROL (For 4K, 16K, and 64K Dynamic Memories) MC3480 — Memory Controller. Used with all three levels of RAM. The memory controller chip is designed to greatly sim­

MB8264A-15

Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
Contextual Info: P relim inary F U J IT S U M O S M e m o rie s M B 8 2 6 4 A -1 2 -W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM Intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also

LH2464-12

Abstract: LH2464-10 lh2464 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30
Contextual Info: LH2464 FEA T U R ES NMOS 256K 64K x 4 Dynamic RAM DESCRIPTION • 65,536 x 4 bit organization • A c c e s s times: 100/120/150 ns (M AX.) • C y c le times: 200/220/260 ns (MIN.) • P a g e mode, Read-M odify-W rite operation T h e LH 2 4 6 4 is a 65,536 x 4 bit d yn a m ic R A M fabri­

a5 gnd

Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns

AK41128

Abstract: AK42064
Contextual Info: HIGH DENSITY DYNAMIC RANDCM ACCESS MEMORY MODULES ACCUTEK DESCRIPTION The Accutek family of high density dynamic RAM modules are comprised of 64K x 1 or 256K x 1 dynamic RAMs packaged in LCCs or PLCCs along with chip capacitors, mounted to multi-layer ceramic

LH2464-12

Abstract: LH2464-10 LH2464-15 dynamic ram nmos 18 pins lh2464 AS2v
Contextual Info: LH2464 FEATURES • 65,536 x 4 bit organization • Access times: 100/120/150 ns MAX. • Cycle times: 200/220/260 ns (MIN.) • Page mode, Read-Modify-Write operation • Power supply: +5 V + 10% • Power consumption (MAX.): Operating: 523/457/413 mW (MAX.)

lh2465

Contextual Info: LH2465 FEATURES • 65,536 x 4 bit organization • Access times: 120/150 ns MAX. • Cycle times: 220/260 ns (MIN.) • Nibble-Mode, Read-Modify-Write operation • Power supply: +5 V ± 10% • Power consumption: Operating: 457/413 mW (MAX.) Standby: 27.5 mW (MAX.)

LM33256

Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Contextual Info: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns

MB8264

Abstract: MB8264-15 i-117 mb81416
Contextual Info: NMOS Dynamic RAMs Quick Cuide To Products in This Section D ev Ice O rg an ization Ac c m « Tim « max Pow er S u p p ly Volts P o w er D issip atio n Package P ag e MRM17-10 V U i117-12 16K x 1 16K x 1 100 nS 120 nS +5 +5 182/20 mW 160/20 mW 16-pin 16-pin

NTE6802

Abstract: NTE6532
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE6507 28-Lead DI P, See Diag. 253 NMOS, 8-B it Microprocessor (MPU) w/On Chip Clock OSC R E 3 rf_V - / _ Q 0 2 (Outp) V ssH Q 0 0 (In) NTE6508 16-Lead DIP, See Diag. 249 CMOS, 1K Static RAM (SRAM), 300ns

Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q

Contextual Info: irrteT ADWAN ! OMIFÜKßMTTOOM M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military Maximum Access Time ns) M51C259HL-15 M51C259HL-20 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA)

M51C259HL

Abstract: M51C259HL-15 M51C259HL-20
Contextual Info: in te T M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM M ilitary M51C259HL-15 M51C259HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Static Column Mode Operation

AM9064-15

Abstract: AM9064-15PC am9064 AM9064-10 R/Detector/"Detector IC"/"CD"/Am2964B/Am9064-15
Contextual Info: Am9064 65,536 x 1 Dynamic RAM DISTINCTIVE CHARACTERISTICS High speed RAS access of 100 and 120ns Single +5V ±10% power supply Low power 22mW standby - 330mW active — 220ns cycle time - 385mW active — 190ns cycle time Read, Write, Read-Modify-Write, Page-Mode and RASOnly refresh capability

NTE4256

Contextual Info: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1

PT 1017

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation

IDT71258

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation