64K BIT DRAM Search Results

DALLAS DS80C320

Abstract: DS80C320-QCG T movx 80C32 DS80 DS80C320 DS80C320-FCG DS80C320-FNG DS80C320-QCG QDG775S
Contextual Info: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM

3171S

Contextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

am9064

Abstract: cvp 45 Am90C644
Contextual Info: Am90C644 64K X 4 CMOS DUAL-ARRAY MEMORY ADVANCE INFORMATION 64K x 4 organization High-speed access: tpAC - 1 00 ns Write-per-Bit mask allows separatewrite controls for each of the four DRAM input bits On-chip video shifter with up to 100Megapixel/sec. bandwidth

Contextual Info: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It c o n s is ts o f a 6 4 K x 4 dynam ic random

3771

Abstract: 3771 ic 8 pin
Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

Contextual Info: J MN1020019 / 0219 / 0419 / 0819 MN1020019 / 0219 / 0419 / 0819 1 Type 1 ROM x8-bit/x16-bit External / 1 6K / 32K / 64K (External Memory Expandable) 1 RAM (x8-bit/x16-bit) 3K / 1 K / 2K / 3K (External Memory Expandable) I Minimum Instruction Execution Time

Contextual Info: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit

Contextual Info: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

KM29V16000ATS

Contextual Info: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

D240C

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

planar YUV

Abstract: cl-gd5480 Cirrus Logic Voyager CL-GD5446 1996 ramdac planar planar YUV display input bitblt 43ia
Contextual Info: CL-GD5480 Advance Product Bulletin FEATURES 64-Bit SGRAM GUI Accelerator • 64-bit high-bandwidth synchronous DRAM interface — 800 Mbytes/sec. peak memory bandwidth — Supports modes up to 1600 x 1200, 64K colors at 60 Hz and 1280 × 1024, 16.8M colors at 75 Hz

ti77

Abstract: BV EI 301
Contextual Info: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase

KM29N16000TS

Abstract: 24130 H142 digital VOICE RECORDER
Contextual Info: KM 29N16000TS/RS FLASH M EM ORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

D0241_S4

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

KM29N16000TS

Contextual Info: KM29N16000TS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION •Single 5 .0 -volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM29N16000ETS/RS FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

Contextual Info: Signetics 2964B Dynamic Memory Controller Product Specification Logic Products FEATURES • Operating Options — controls 16K or 64K DRAMs • 8-Bit Refresh Counter — refresh address generation, clear input, and selectable terminal count 128 or 256 output

EL01

Abstract: 964b 4KDRAM
Contextual Info: 2964B Signetics Dynamic Memory Controller Product Specification Logic Products FEATURES • Operating Options — controls 16K or 64K DRAMs • 8-Bit Refresh Counter — refresh address generation, clear input, and selectable terminal count 128 or 256 output

HY53C464LS

Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Contextual Info: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

KM416C64J

Abstract: KM416C64
Contextual Info: KM416C64 CMOS DRAM 64K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption

Contextual Info: KM 29N16000ETS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : {2M +64K) x 8 bit

L4142

Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte