64K BIT DRAM Search Results

Contextual Info: FLASH MEMORY KM29N16000TS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000TS/RS is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array : (2M +64K) x 8 bit

KM428C64

Abstract: "Video RAM" Video RAM
Contextual Info: KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port Performance range : . Parameter Speed . RAM access time tR A c RAM access time (tc A c ) The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

Contextual Info: PRELIMINARY KM29V16000ATS/RS FLASH MEMORY 2M X 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register The KM29V16000ATS/RS is a 2M(2,097,152)x8 bit NAND Flash memory with a spare 64K(65.536)x8 bit. Its NAND

80C31 instruction set

Abstract: EXIF-91h
Contextual Info: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM

DALLAS DS80C320

Abstract: DS80C320-QCG T movx 80C32 DS80 DS80C320 DS80C320-FCG DS80C320-FNG DS80C320-QCG QDG775S
Contextual Info: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM

3171S

Contextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND

Contextual Info: CMOS VIDEO RAM ÍM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port A rchitecture 64K x 4 bits R AM port The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It consists of a 6 4 K x 4 dynamic random access memory RAM port and 256 x 4 static serial •

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

am9064

Abstract: cvp 45 Am90C644
Contextual Info: Am90C644 64K X 4 CMOS DUAL-ARRAY MEMORY ADVANCE INFORMATION 64K x 4 organization High-speed access: tpAC - 1 00 ns Write-per-Bit mask allows separatewrite controls for each of the four DRAM input bits On-chip video shifter with up to 100Megapixel/sec. bandwidth

Contextual Info: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It c o n s is ts o f a 6 4 K x 4 dynam ic random

3771 8 pin ic

Abstract: 3771 ic 8 pin 8 pin ic 3771 3771 1A7A1 3771- IC
Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

3771

Abstract: 3771 ic 8 pin
Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71V016L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V016L is a 1,048,576-bit very low-pow er Static RAM organized as 64K x 16. It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

RA5 1208

Abstract: samsung hv capacitor 64KX4 KM424C64
Contextual Info: SAMSUNG ELECTRONICS INC b7 E » • T i m m s D G lb H flM T 77 CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION ■ Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port * Performance range: The Samsung KM424C64 is a CMOS 64K x 4 bit Dual

Contextual Info: J MN1020019 / 0219 / 0419 / 0819 MN1020019 / 0219 / 0419 / 0819 1 Type 1 ROM x8-bit/x16-bit External / 1 6K / 32K / 64K (External Memory Expandable) 1 RAM (x8-bit/x16-bit) 3K / 1 K / 2K / 3K (External Memory Expandable) I Minimum Instruction Execution Time

HY53C464LS

Abstract: LASCR HY53C464S HY53C464 MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70
Contextual Info: HY53C464 Series »HYUNDAI 64K X 4-bit CMOS DRAM DESCRIPTION The HY53C464 is feist dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

HM534

Abstract: hitachi sr 302 HM53462P-12 HM53462P12 HM53462P-15
Contextual Info: HMS3462 Series 65,536-word x 4 bits Multi Port DRAM with Logic operation mode The HM53462P is a 262,144 bit multi port memory equipped with a 64k word x 4 bit Dynamic RAM port and a 256 word x 4 bit Serial Access Memory (SAM) port. The SAM port is con­

Contextual Info: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

NMOS DRAM

Abstract: KM4164BP KM4164 km4164b
Contextual Info: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor­

KM29N16000ATS

Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization Flash memory with a spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array

KM29V16000ATS

Contextual Info: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

D240C

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

CL-GD5480

Abstract: intel 945 crb alpine md53 intel 845 crb schematics 945 MOTHERBOARD CIRCUIT diagram 945 crb INTEL 945 crb schematics vesa GD5480 pitch 0.4 QFP 256p
Contextual Info: CL-GD5480 Advance Data Book FEATURES 64-Bit SGRAM GUI Accelerator • 64-bit high-bandwidth synchronous DRAM interface — 800 Mbytes/sec. peak memory bandwidth — Supports modes up to 1600 x 1200, 64K colors at 60 Hz and 1280 × 1024, 16.8M colors at 75 Hz

planar YUV

Abstract: cl-gd5480 Cirrus Logic Voyager CL-GD5446 1996 ramdac planar planar YUV display input bitblt 43ia
Contextual Info: CL-GD5480 Advance Product Bulletin FEATURES 64-Bit SGRAM GUI Accelerator • 64-bit high-bandwidth synchronous DRAM interface — 800 Mbytes/sec. peak memory bandwidth — Supports modes up to 1600 x 1200, 64K colors at 60 Hz and 1280 × 1024, 16.8M colors at 75 Hz

ti77

Abstract: BV EI 301
Contextual Info: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase