649-1 DIODE Search Results

1N649

Abstract: 1N645 1N645-1 1N646 1N647 1N648 1N649-1 DO-213AA
Contextual Info: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not

TA449

Abstract: TA925 I400 CB-478 TA649
Contextual Info: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL l» g[RÎ [lLSOT®«S HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A MU 86 CB-478 MU 171 MU 169 ASYMMETRICAL FAST SWITCHING THYRISTORS Type Vd RM VRRM *TRMS •t s m (V Tease = «°°C (A) Tj max* (V) vTO dv/dt

tfr 586

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 649 S 08.10 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

ATMEL 649v

Abstract: 6490V ATMEGA329 TWI avr adc
Contextual Info: Features • High Performance, Low Power Atmel AVR® 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

ATMEL 649v

Abstract: lcd monitor board schematic
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

Contextual Info: Features • High Performance, Low Power Atmel AVR® 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

ATMEGA3290

Abstract: ATMEL 649v
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

Contextual Info: Red Laser Diode PL-3147-021_ DL-3147-021 is index guided 645 nm Typ. AIGalnP laser diode with low threshold current. The low threshold current is achieved by a strained multiple quantum well active layer. DL-3147-021 is suitable for laser pointer.

Contextual Info: TD62M4700F— EXCELLENT LOW SATURATION H-BRIDGE DRIVER Unit in nun TD62M4700F is low voltage use Multi Chip H-Bridge Driver IC incorporates 4 low saturation discrete Transistors which equipped bias resistor and diode This IC is designed especially for Camera Winding

el 509

Abstract: D368S
Contextual Info: EUPEC Fast rectifier diodes Type If r m s m V rrm V r sm = If sm / ¡ 2dt blE » lFAVM/tc • 3403217 0001333 bOb W U P E C V TO rT Ir m R th JC tv j max Outline VRRM + 50 V1) A V 10 ms, 10 ms, tv) = tvj = tyj ~ tv, max ^vj max t,| max t., max 1F = IfaVM

MG75G2CL1

Abstract: MG75G2cl1 toshiba 68Q5 A649
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G2CL1 Unit in mm 5-Mi 2-05.3ÍO.3 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. o . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.

GB 44-706

Abstract: 44-706 P 131 GB g8hz GB 44706A G2010 G-45706A 13302 GA44.706A M6HZ
Contextual Info: i VR TYPES v eff recommandée V RRM V 0,7 A * GA GB GD GF t amb = 80°C tamb = 80°C (A) (A) 10 ms Diodes @ \/ r 25°C IfJA) (A) 125°C ImA) TYPES Q 100 200 400 600 GO 13.302 GF 13.302 GH 13.302 2,7 A 50 80 150 250 0,3 1,25 4 10 CONTROLLED AVALANCHE SERIE

m867

Abstract: ntc m867
Contextual Info: SFH 482201 SIEMENS G aA lA s-LA S ER DIODE 250 mW Package Dimensions in mm 1. 2. 3 4. Peltier-Cooler + NTC NTC Laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode Peltier-Cooler (-) FEATURES Maximum Ratings * Quantum-W ell Structure Manufactured

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

diodes IN4001

Abstract: S06 rectifier in648 1S940 rectifier in4004 1S136 1S115 Diodes In4007 1s020 IN4007
Contextual Info: Diodes and Rectifiers Type C a se No. A m p s. (V o lts) (A m p s.) (n A ) Drawing Average Rectified Forward Current C rest Single Max. I R S P E C IA L No. A m bient Tem perature W orking Cycle at P .I.V . FEA TU RES Voltage Surge at 25°C 25°C 50°C 100°C

M4000

Abstract: M4900 UM4000 UM4001 UM4002 UM4006 UM4010 UM4900 UM4901 i381
Contextual Info: UM4000 SERIES UM4900 SERIES PIN DIODE Features • Power dissipation to 37.5W • Voltage ratings to 1000V • Series resistance rated at 0.5S2 • Carrier lifetime greater than 5ms Description The UM4000 and UM4900 series feature high power PIN diodes with long carrier life­

Contextual Info: GaAs IRED S PHOTO-TRIAC TLP3064 TLP3064 U nit in mm OFFICE M A C H IN E . H O U S E H O LD USE E Q U IP M E N T . T R IA C DRIVER. S OLID STATE R ELAY. The TOSHIBA TLP3064 consists of a zero voltage crossing turn-on photo-triac optically coupled to a GaAfAs infrared em itting diode in

DL-3147-021

Contextual Info: Ordering number : ENN5861C Red Laser Diode DL-3147-021 DL-3147-021 Red Laser Diode Features Package Dimensions : 645 nm Typ. : Ith = 30 mA (Typ.) : Vop = 2.3 V (Typ.) : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications

DL-3147-021

Contextual Info: Ordering number : EN5861A DL-3147-021 Red Laser Diode DL-3147-021 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current is achieved by a strained

d2388

Abstract: D368S EUPEC D 648 S
Contextual Info: Fast rectifier diodes Type V rrm V eupec If r m s m A If s m d /i2dt 10 ms, 10 ms, t, max tvj max kA A2s • If a v m ^ c N°C 34D32T? 0000112 125 ■ upec V TO> rT Ihm R.hjc tv,= tvj max tvj = tyi max tyj = tVJ max 180°el sin. V mO = I f AVM ¡F tv j m ax