64260B Search Results

Contextual Info: PRELIMINARY KM64259B/64260B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM Sep. I/O FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating -15ns: 140mA (max.)

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

Contextual Info: PRELIMINARY KM64259B/64260B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM Sep. I/O FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating -15ns: 140mA (max.)

KM64260B

Contextual Info: KM64259B/64260B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM Sep. I/O FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.): KM64259B 20, 25ns (max.): 64260B • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max.)