64 X32 DRAM BGA Search Results

gk 7031

Contextual Info: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.

W2639A

Abstract: lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer W2638A
Contextual Info: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.

SH3-DSP

Abstract: 7729R HJ945020 sdram pcb gerber hitachi sh3 HJ945010BP HJ945010 SH7729 SH7750 hitachi sh4
Contextual Info: EP-MT-01001A-02 Hitachi MCM/MCP Products 日立 MCM/MCP プロダクツ 2001年 3月1日 株式会社 日立製作所 半導体グループ DRAM事業部 MCM設計部 製品技術Gr. Hitachi MCM/MCP Products EP-MT-01001A-02 1. 本書に記載の製品及び技術のうち「外国為替及び外国貿易法」に基づき安全保障貿易管理関連貨物・技術に該当するものを輸出する

K4X2G323PD8GD8

Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Contextual Info: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from

samsung ddr3 ram MTBF

Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Contextual Info: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

Contextual Info: W2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes Data Sheet The W2630 Series DDR2 BGA probes enable probing of embedded memory DIMMs directly at the ball grid array with Agilent logic analyzers and oscilloscopes Features The Agilent W2630 Series DDR2

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

K9HDG08U1A

Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Contextual Info: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks

sdr sdram reference

Abstract: sdr sdram
Contextual Info: SDR SDRAM E0364M20 Ver.2.0 (Previous Rev.0.3e) June 2004 (K) Japan DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.

Contextual Info: SDR SDRAM E0364M11 Ver.1.1 (Previous Rev.0.3e) February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.

PC Oscilloscope Probe

Abstract: N5426A Oscilloscope Probe to PC Probe Oscilloscope Connecting Oscilloscope Probe to PC W2631-97000 81204A AGILENT 1134A AGILENT TECHNOLOGIES DDR2 x32
Contextual Info: W2630A Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes Data Sheet The W2630A series DDR2 BGA probes enable probing of embedded memory DIMMs directly at the ball grid array with Agilent logic analyzers and oscilloscopes Features The Agilent W2630A series DDR2

IS42RM32800D

Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 •฀ Fully synchronous; all signals referenced to a positive clock edge •฀ Internal bank for hiding row access and precharge

IS42VM83200D

Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42SM32800D

Abstract: 64 x32 dram bga IS42RM83200D-7TL IS42RM32800D
Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Preliminary Information JULY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

SO-DIMM 144-pin

Abstract: 64 x32 dram bga
Contextual Info: C. Ordering Information Component 2_ 7_ _8_ _9_ KM 4 X X S XX X X X X X SAMSUNG Memory 11_ 12 X Min. Cycle Time Power DRAM Package Organization Feature Revision Density Interface Refresh # of banks 1. SAMSUNG Memory 7. # of banks 2 : 2Bartks 4 : 4Banks 2. DRAM

IS42VM16160D-8TLI

Abstract: IS42VM83200D
Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

SM83200D

Abstract: IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM83200D IS42SM32800D IS42SM16160D-7BLI M3100
Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42RM32800D

Abstract: TSOP II 54 IS42SM32800d IS42SM83200D
Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Preliminary Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

numonyx 106 ball

Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width

IS42VM83200D

Abstract: TSOP II 54
Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM APRIL 2012 FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3

IS42VM83200D

Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM APRIL 2012 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3