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    Microchip Technology Inc HV9963NG-G-M934

    Closed-loop LED Driver - Enhanced PWM Dimming (0-100%) - 16-lead SOIC - 8-40VDC Vin - RoHS Compliant - Tape&Reel
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    Avnet Americas HV9963NG-G-M934 Tape & Reel 6 Weeks 2,600
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    RS HV9963NG-G-M934 Bulk 8 Weeks 2,600
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    Microchip Technology Inc HV9963NG-G-M934 Tape & Reel 6 Weeks
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    Microchip Technology Inc HV9963NG-G-M901

    Closed-loop LED Driver - Enhanced PWM Dimming (0-100%) - 16-lead SOIC - 8-40VDC Vin - RoHS Compliant - Tape&Reel
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    Master Electronics HV9963NG-G-M901
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    Avnet Americas HV9963NG-G-M901 Tape & Reel 6 Weeks 2,600
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    Microchip Technology Inc HV9963NG-G-M901 Tape & Reel 6 Weeks
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    Microchip Technology Inc HV9963NG-G

    Closed-loop LED Driver - Enhanced PWM Dimming (0-100%) - 16-lead SOIC - 8-40VDC Vin - RoHS Compliant
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    Master Electronics HV9963NG-G
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    Avnet Americas HV9963NG-G Tube 6 Weeks 315
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    Newark HV9963NG-G Bulk 250
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    RS HV9963NG-G Bulk 6 Weeks 405
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    Microchip Technology Inc HV9963NG-G Tube 1,190 6 Weeks
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    Avnet Silica HV9963NG-G 8 Weeks 45
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    EBV Elektronik HV9963NG-G 7 Weeks 45
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    Vyrian HV9963NG-G 7,184
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    Eaton Cutler-Hammer DH363NGK

    100A/3P Hd Fsbl Sfty Sw 600V W/Neut N1; |Eaton Cutler Hammer DH363NGK
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    Newark DH363NGK Bulk 1
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    RS DH363NGK Bulk 1 1 Weeks 1
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    Eaton Cutler-Hammer DH263NGK

    100A/2P HD FUSIBLE SAFETY SWITCH 600V W/NEUT NEMA 1
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    RS DH263NGK Bulk 2 Weeks 1
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    63NG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Contextual Info: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original
    ntd4863nntd4863n/dmosfet 63ngmosfet 48 63ng+149 63ng PDF

    49 63ng

    Abstract: mosfet 63ng 63ng 4963ng NTD4963 NTD4963N NTD4963N-1G 5E-03 4963N NTD4963NT4G
    Contextual Info: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    ntd4963nntd4963n/d49 63ngmosfet 63ng+763ng4963ngntd4963ntd4963n-1g5e-034963nntd4963nt4g PDF

    mosfet 63ng

    Abstract: 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N
    Contextual Info: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    ntd4863nntd4863n/dmosfet 63ng4863ng+763ng48 63ng4863nmosfet 48 63ngntd4863n-1g49 63ng369d PDF

    mosfet 63ng

    Abstract: 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng
    Contextual Info: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    ntd4863nntd4863n/dmosfet 63ng63ng+74863ng48 63ng940 48 63ng4863n369dmosfet 48 63ngmosfet 50 63ng PDF

    4963ng

    Abstract: mosfet 63ng 49 63ng NTD4963 63ng 4963N
    Contextual Info: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    ntd4963nntd4963n/d4963ngmosfet 63ng+449 63ngntd496363ng4963n PDF

    4963ng

    Abstract: 49 63ng mosfet 63ng 63ng NTD4963N NTD4963NT4G NTD4963 4963N 369D BFR 965
    Contextual Info: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    ntd4963nntd4963n/d4963ng49 63ng+7mosfet 63ng63ngntd4963nt4gntd49634963n369dbfr 965 PDF

    49 63ng

    Abstract: mosfet 63ng
    Contextual Info: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    ntd4963nntd4963n/d49 63ngmosfet 63ng PDF

    mosfet 63ng

    Abstract: 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng
    Contextual Info: NTD4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    ntd4863nntd4863n/dmosfet 63ng49 63ng+5mosfet 48 63ng63ngmosfet+63ng48 63ng940 48 63ng PDF

    mosfet 63ng

    Abstract: 49 63ng
    Contextual Info: NTD4963N Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original
    ntd4963nntd4963n/dmosfet 63ng49 63ng PDF