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    TE Connectivity 814863N002

    Heat Shrink Tubing & Sleeves 202D932-4-0-CS5355
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    Mouser Electronics 814863N002
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    Master Electronics 814863N002
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    • 100 $33.59
    • 1000 $23.06
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    onsemi NTD4863NT4G

    NTD4863NT4G N-CHANNEL MOSFET TRANSISTOR, 49 A, 25 V, 3-PIN DPAK
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    RS NTD4863NT4G Bulk 1
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    Rochester Electronics NTD4863NT4G 180,925 1
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    Chip 1 Exchange NTD4863NT4G 238
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    Vyrian NTD4863NT4G 9,745
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    Phoenix Contact 2903791

    Terminal Block Interface Modules VIP-3/PT/FLK26
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    TTI 2903791 Each 1
    • 1 $63.56
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    Phoenix Contact 2295554

    Controller Accessories PLC-V8/FLK 14/OUT
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    TTI 2295554 Each 1
    • 1 $61.04
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    Nichicon Corporation UVZ1J471MHD1TO

    Aluminum Electrolytic Capacitors - Radial Leaded 470uF 63V 105c
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    TTI UVZ1J471MHD1TO Ammo Pack 500
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    Find more 4863N price and stock on Findchips.com

    4863N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Contextual Info: 4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N PDF

    mosfet 63ng

    Abstract: 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N
    Contextual Info: 4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		NTD4863N NTD4863N/D mosfet 63ng 4863ng 63ng 48 63ng 4863N MOSFET 48 63ng NTD4863N-1G 49 63ng 369D NTD4863N PDF

    mosfet 63ng

    Abstract: 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng
    Contextual Info: 4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		NTD4863N NTD4863N/D mosfet 63ng 63ng 4863ng 48 63ng 940 48 63ng 4863N 369D MOSFET 48 63ng mosfet 50 63ng PDF

    mosfet 63ng

    Abstract: 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng
    Contextual Info: 4863N Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		NTD4863N NTD4863N/D mosfet 63ng 49 63ng MOSFET 48 63ng 63ng mosfet+63ng 48 63ng 940 48 63ng PDF

    CM4863

    Abstract: exposed LM4863MTE LM4863 LM4863M LM4863MT LM4863N M16B N16A 747s
    Contextual Info: Apr i l 1998 National Semiconductor LM4863 Boomer Audio Power Amplifier Series Dual 2.2W Audio A m plifier Plus Stereo Headphone Function General Description Key Specifications The LM 4863 is a dual bridge-connected audio pow er a m pli­ fier w hich, when connected to a 5V supply, will deliver 2.2W


    OCR Scan     		LM4863 CM4863 exposed LM4863MTE LM4863M LM4863MT LM4863N M16B N16A 747s PDF

    LM 4863 D

    Abstract: 4863s lm4863d LM4863 D 4863M 4863N headphone audio amplifier lm audio amplifier 2,5w XA20A LM+4863+D
    Contextual Info: A ugust 1998 LM 4863 Boom er Audio Power Amplifier Series Dual 2.2W Audio A m plifier Plus Stereo H eadphone Function General Description Key Specifications The LM 4863 is a dual bridge-connected audio pow er am pli­ fie r w hich, w hen connected to a 5V supply, will deliver 2.2W


    OCR Scan     		LM4863 audio0-272-9959 LM 4863 D 4863s lm4863d LM4863 D 4863M 4863N headphone audio amplifier lm audio amplifier 2,5w XA20A LM+4863+D PDF