63132 Search Results

Contextual Info: L E D -2 HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm VACTEC OPTOELECTRONICS 10900 P AG E BLVD. ST. LO U IS, MO. 63132 U SA PHONE 314-423-4900 TW X 910-764-0811 FEATURES: P R O D U C T DESCRIPTION: •Nine standard packages in herm etic and low-cost epoxy

Vactec

Abstract: 7110 Photodiode vactec VTIC7210 EG*G Optoelectronics high sensitivity photodiode visible light photodiode PN photodiode amplifier
Contextual Info: O LAS-1 A LIGHT ACTIVATED SWITCHES J^ EG zG VACTEC OPTOELECTRONICS 1 0 9 0 0 PAGE BO/D. ST. LOUIS, MO. 63132 USA VTIC VTIC VTIC VTIC VTIC VTIC 1010 1010IR 1110 1110IR 7110 7210 PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 PRODUCT DESCRIPTION FEATURES This series of Light Activated Switches are mono­

VTR22D2

Abstract: VTR22E1 phototransistor visible light VTR22D1 VTR22D3 VTR22E2 VTR22E3 IR led detector photoswitch npn
Contextual Info: J^E B sG VACTEC RETRO PHOTO-SWITCH VTR22D Series LED - PHOTOTRANSISTOR VTR22E Series LED - PHOTODARL1NGTON OPTOELECTRONICS 10900 PAGE BLVD: ST. LOUIS. MO 63132 USA PHONE 314-423-4900 TWX 910-764-0811 FE A T U R E S P R O D U C T DESCRIPTION • Small Size

VTT9012

Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Contextual Info: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900

high sensitivity reflective phototransistor

Abstract: photoswitch npn RPS1C Vactec VTR17
Contextual Info: RPS1-C JL e B rB RETRO PHOTO-SWITCH vac tec VTR16 VTR17 VTRI/c 0-8.0mm SENSING OPTOELECTRONICS SEALED CASE LED-PHOTOTRANSISTOR 10900 PAGE BI3/D. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 P R O D U C T D E S C R IP T IO N FEATURES • Sealed case—no dust problems due to

nE352

Abstract: VTE3121L T01B ME 1117 T018 VTE1012 VTE1112 VTE1211 VTE1211W VTE3121
Contextual Info: This Material L E D -1 B Copyrighted n ¿ '^ E G z tS HIGH POWER GaAs INFRARED EMITTING DIODES V A C T E C OPTOELECTRONICS 920 nm 10900 PAGE BLVD. ST. LOUIS. MO. 63132 USA TWX 910-764-0811 PHONE 314-423-4900 By P R O D U C T D ESCRIPTION: Its FE A T U R E S:

Contextual Info: Part Details for P/N: 63132-3 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Terminals and Splices MAG-MATE Terminals AMP 63132-3 Active Active Tyco Electronics P/N: 63132-3

Contextual Info: Part Details for P/N: 63132-2 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Terminals and Splices MAG-MATE Terminals AMP 63132-2 Active Active Tyco Electronics P/N: 63132-2

Contextual Info: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of

VTE3171L

Abstract: T018 VTE1062 VTE1162 VTE1261 VTE1261W VTE3171
Contextual Info: This Material L E D -2 Copyrighted HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm J^ E G & G V A C T E C OPTOELECTRONICS By 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 Its Respective FEATU R ES: P R O D U C T D E S C R IP T IO N :

VT83N2

Contextual Info: Photoconductive Cell VT800 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 175 3.5 mW mW/°C TA –40 to +75

IR transmiting

Abstract: VTP1332F photodiode bias circuit VTP13
Contextual Info: SILICON PHOTODIODE VTP1332F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in an IR transmitting, T-1 3/4 endlooking package. • Infrared transmiting/visible blocking

VTD34SM

Contextual Info: SILICON PHOTODIODE VTD34SM FEATURES PRODUCT DESCRIPTION • High sensitivity • Low capacitance This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting. • Fast response • Low noise • High shunt impedance

VT93N1

Abstract: VT900 VT93N2 VT935G VT93N3 k300 VT900 photoconductive cell VT93N4 K1M5 B20K
Contextual Info: Photoconductive Cell VT900 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 80 1.6 mW mW/°C TA –40 to +75

70223

Abstract: 30363 bfc2383
Contextual Info: MMKP 383 Vishay BCcomponents AC and Pulse Double Metallized Polypropylene Film Capacitors MMKP Radial Potted Type FEATURES 168x12 halfpage w l h 7.5 mm bent back pitch. 15 to 27.5 mm lead pitch. Low contact resistance. Low loss dielectric. Small dimensions for high density packaging. Supplied

VTR17D1h

Abstract: VTR17D1 VTR17D
Contextual Info: Reflective Optoswitch VTR17D1H Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches combines an infrared emitting diode IRED with an NPN phototransistor (VTR17D1H) in a one piece, sealed, IR transmitting plastic case.

Contextual Info: GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 3 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small

Contextual Info: VTP Process Photodiodes VTP7110 PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a clear, lensed sidelooking package. These diodes exhibit low dark current under reverse bias and

Contextual Info: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection

vishay RCK 02

Abstract: Sfernice RCK RNC90Y RNC90Z vishay resistors y705 RS92N
Contextual Info: For Space Applications RCK HR 02, RCK HR 02A ESA Qualified Vishay Foil Resistors High Precision Flexible Construction Bulk Metal Foil with Tolerance of ± 0.01 %, TCR of 0 ± 2 ppm/°C and Qualified to ESA Specification 4001/011 Based on RS92N (RNC90Y)

VTL5C7

Contextual Info: VTL5C6, 5C7 Low Cost Axial Vactrols PACKAGE DIMENSIONS INCH MM PLASTIC POTTING CONTOUR NOT CONTROLLED DESCRIPTION VTL5C6 has a large dynamic range, high dark resistance, a low temperature coeffecient of resistance, and a small light history memory. VTL5C7 is a shallow sloped device with good dynamic range, average temperature coefficient of resistance, speed of

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

VTE1013

Abstract: VTE1113 VTE3322LA VTE3324LA opto127
Contextual Info: GaAs Infrared Emitting Diodes VTE1013 TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher

schematic retro reflective sensor

Abstract: VTR17D1 VTR16D1 sensor acetone opto-switch dark activated lamp switches high sensitivity reflective phototransistor hydrocarbon sensor Reflective Optical Sensor Opto-23
Contextual Info: Reflective Optoswitch VTR16D1 Arrow Retro with PCB Mount Leads PRODUCT DESCRIPTION This series of reflective optical switches combines an infrared emitting diode IRED with an NPN phototransistor (VTR16D1) in a one piece, sealed, IR transmitting plastic case.