6299M Search Results

IC TA 31101

Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the

Contextual Info: SANYO SEM ICO ND UC TOR CORP 22E D 7*n707fa 00073=12 4 FC121 T - 37-/3 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications with Bias Resistances R1=2.2kO, R2=10k0 3190 Features • On-chip bias resistances (Ri=2.2kQ,R2=lOkfl)

Contextual Info: Ordering number: EN 3 0 9 3 _2SA1707/2SC4487 No.3093 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O i High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity, wide ASO • Low collector-to-emitter saturation voltage

Contextual Info: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.

2SA1707

Contextual Info: Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.

TRF 840

Abstract: 2066 2SC4211 FC104
Contextual Info: SANYO SEMICONDUCTOR CORP TWOTb 52E D 000744Li 1 FC104 # NPN Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3112 F e a tu re s - Composite type w ith 2 tran sisto rs contained in the CP package cu rre n tly in use, im proving th e

Contextual Info: Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor http://onsemi.com - 50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage • • Large current capacity, wide ASO

Contextual Info: 2SA1707 / 2SC4487 Ordering number : EN3093A SANYO Semiconductors DATA SHEET 2SA1707 / 2SC4487 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage

pa 2030a

Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
Contextual Info: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e

2sa1502

Contextual Info: Ordering n u m b e r:EN 3190 F C 12 1 PNP Epitaxial P lanar Silicon Composite Transistor Switching Applications with Bias Resistance F eatu re s • On-chip bias resistances (Ri —2.2kQ,R2 = lOkft) • Composite type with 2 transistors contained in the CP package currently in use, im proving the

2044B

Abstract: 2SA1732
Contextual Info: Ordering number:EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions

2SA1707

Abstract: 2SC4487 ITR04304 ITR04305 ENN3093
Contextual Info: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.

"Marking 121"

Abstract: 2SA1502 FC121
Contextual Info: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the

2044B

Abstract: 2SA1732
Contextual Info: Ordering number: EN 3 1 3 6 2 S A 1 73 2 No.3136 PN P E pitaxial P la n ar Silicon T ransistor High-Speed Switching Applications F e a tu re s - Adoption of FBET, MBIT processes • Large cu rren t capacity •Low collector-to-em itter saturation voltage ■F ast switching speed

2SA1732

Abstract: 2044B ITR04435
Contextual Info: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

SANYO SS 1001

Abstract: FC101 FC101 cp6 MA 2067
Contextual Info: SANYO SEMICONDUCTOR CORP ESE D T'HTGTb Q007437 Q T 'Z 7 ~ 0 9 f c io i PNP E pitaxial P lanar S ilic o n C o m p o s ite T ra n s is to r 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3109 F e a tu re s - Composite type w ith 2 tran sisto rs contained in the CP package cu rre n tly in use, im proving th e

Contextual Info: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the

Contextual Info: Ordering num beriE N 3136 2SA1732 No.3136 SA W O PN P E p itax ial P la n a r Silicon T ra n sisto r I High-Speed Switching Applications Features • Adoption of FBET, MBIT processes •Large c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage

Transistor A1707

Abstract: A1707 2SA17 transistor 2sa1707 K 4005 transistor C4487 2SA1707 24487 TO-92 NPN CBO 40V CEO 25V EBO 5V 3a170
Contextual Info: O rdering num ber: EN 3093 2SA1707/2SC4487 No.3093 SAXYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity, wide ASO • Low collector-to-emitter saturation voltage

2044B

Abstract: 2SA1732 ITR04435
Contextual Info: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

Contextual Info: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.