62649 Search Results

Contextual Info: PD -9.1649 International IQR Rectifier IRF7526D1 PRELIMINARY FETKY M O S F E T and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint

Contextual Info: SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.28 76 Qgs (nC) 11 Qgd (nC) 17 Configuration Single D APPLICATIONS

Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses

338-743

Abstract: 107476 rs 303-258 303-422 K2504 339-291 466-797 262-523 rs 261-198 RS 101-715
Contextual Info: Issued September 2001 302-0990 Data Packs G/K NATO stock numbers Data Sheet RS manufacturers code K2504 A comprehensive list of those products in the RS range which have been assigned NATO stock numbers. This list is solely intended to assist in the process of documentation, as the existence of a NATO stock number does

Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm

Contextual Info: SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10

407257-1

Abstract: 164589 028-7428 03601-30 74676 0674068 141898 1606445 74127 60034
Contextual Info: Narrow Wide Plots Back to RFM Website S-Parameter Narrow "RF1172C, 7/10/02 " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " 427.411200 -.1873169, -.1873474, -.1869202, -.1868591,

Contextual Info: SiHA20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.184 92 Qgs (nC) 10 Qgd (nC) 19

Contextual Info: Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK Thin Lead DIMENSIONS SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.30 4.70 0.169 0.185 A1 2.50 2.90 0.098 0.114 A2 2.50 2.70 0.098 0.106 0.031 b 0.60 0.80 0.024 b2 0.60 0.80 0.024 0.031

Contextual Info: SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D

Contextual Info: SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.243 66 Qgs (nC) 8 Qgd (nC) 14

UA317

Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Contextual Info: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear

Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses

744049

Abstract: 642639E 30359 362610E 707001E 740417 543301E-3 43403 32240 74127
Contextual Info: S-Parameter Narrow RF1400D 03/09/04 # HZ S RI R 50 431420000. .658264E+0 .485841E-3 .637421E+0 431432500. .657867E+0 .502661E-3 .636993E+0 431445000. .657623E+0 .505368E-3 .636780E+0 431457500. .657440E+0 .524466E-3 .636536E+0 431470000. .657166E+0 .540092E-3 .636475E+0

Contextual Info: SiHA21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg