625 1334 DIODE Search Results

GW 540 DIODE

Abstract: 625 1334 diode
Contextual Info: MITEQ AM-1641 SERIES AMPLIFIER FREQUENCY MHz 100–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1641 27 1.5 2.0:1 50/50 1.9 25 31 -5 dB Return Loss 32 Gain (dB) 30 29

GW 540 DIODE

Contextual Info: MITEQ AM-3A-000110 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-3A-000110 37 0.75 2.0:1 50/50 1.6 10 FREQUENCY (MHz) 0.3–1000 42 3 13 41 12 40 P1dB 39 38 11 10 37

Contextual Info: MITEQ AM-4A-000110 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-4A-000110 50 1 2.0:1 50/50 1.6 10 FREQUENCY (MHz) 1–1000 4 15 14 P1dB 13 12 11 10 9 8 100 200 300

AM-1431

Contextual Info: MITEQ AM-1431 SERIES AMPLIFIER FREQUENCY MHz 0.01–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1431 35 0.75 2.0:1 50/50 1.6 10 15 40 14 75 3 13 39 P1dB 38 37 12 11

Contextual Info: MITEQ AM-2A-000110 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-2A-000110 26 0.75 2.0:1 50/50 1.6 8 FREQUENCY (MHz) 1–1000 Gain (dB) 29 P1dB Gain (dB) 30 28 27 26

AM-1309

Contextual Info: MITEQ AM-1309 AMPLIFIER FREQUENCY MHz 0.01–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1309 50 1 2.0:1 50/50 1.6 10 4 13 53 12 52 11 P1dB 51 50 10 9 8 49 7 48 6 0.3

Contextual Info: MITEQ AM-1551 SERIES AMPLIFIER FREQUENCY MHz 0.02–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1551 38 1 2.0:1 50/50 1.6 16 Gain (dB) Third Order Intercept 44 3 43

Contextual Info: MITEQ AM-1352 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 1–1000 AM-1352-1000 20 0.5 2.0:1 50/50 3.6 17 15 95 1 1–2000 AM-1352-2000 20 0.75 2.0:1 50/50 3.7

AM-1300

Contextual Info: MITEQ AM SERIES AMPLIFIER FREQUENCY MHz 0.01–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1300 27 0.75 2.0:1 50/50 1.6 8 13 29 12 55 2 11 28 P1dB 27 26 10 9 8 7 24

Contextual Info: MITEQ AM-1646 AMPLIFIER FREQUENCY MHz 0.3–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1646 59 0.75 2.0:1 50/50 1.6 15 4 19 62 18 61 17 P1dB 60 59 16 15 14 58 13 57

gw 340 diode

Abstract: DIODE 236 1334
Contextual Info: MITEQ AU-1642 AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1dB Gain (dB) 27 26 25 24 23 22 21 20 19 18 145 240 340 430 525 620 715 810 25 24 23 22 21 20 19 18 17 16 905 1000

DIODE 906 1334

Contextual Info: MITEQ AM-1636 AMPLIFIER FREQUENCY MHz 200–3000 MODEL NUMBER GAIN (dB) (Min.) AM-1636 8 VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 2.0:1 50/50 1.7 20 23 18 22 16 21 P1dB Gain (dB) 20 14 19 10 18 8 640

Contextual Info: MITEQ AM-1624 SERIES AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) IMPED. IN/OUT (Ohms) VSWR (Max.) NOISE FIGURE (dB, Typ.) 45 Third Order Intercept 38 37 36 35 34 33 40 35 30 1.0 250 500 750 1000 1250 1500 1750 2000 2250 2500

miteq au series satcom if amplifiers

Contextual Info: MITEQ AM-1185 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1185-1000 AM-1185-2000 28 28 0.5 1 2.0:1 2.0:1 50/50 50/50 3.4 3.5 12 10 FREQUENCY (MHz) 1–1000

ZR34161

Abstract: 117CPI 74hco3 AD1334 mrd 14b AD1334BD TI5C AO1334 AD1332 c1cj
Contextual Info: ANALOGDEVICES fAX-ON-DEMAND HOTLINE - Page 20 Four-Channel 12-BitSamplingAIDConverter r. ANALOG L8II DEVICES forDigitalSignalProce~ing AD1334 FEATURES I BLOCK DIAGRAM Four-Channel AID Converter for DSP Includes: Simultaneous or Independent Sampling Capability

RF 1331

Contextual Info: MITEQ AM-1331 & AM-1412 SERIES AMPLIFIER FREQUENCY MHz 1–1000 1–1000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1331 AM-1412 35 35 0.75 0.75 2.0:1 2.0:1 50/50 50/50

AN8742

Abstract: CD22402E Genlock CD22402D 1N914 CA5470 CD22402 CD4000B RS-170 decoder tv
Contextual Info: CD22402 S E M I C O N D U C T O R Sync Generator for TV Applications and Video Processing Systems November 1996 Features Description • Interlaced Composite Sync Output The Harris CD22402 Note is a CMOS LSI sync generator that produces all the timing signals required to drive a fully 2-to-1

huf75337g3

Abstract: 75337S
Contextual Info: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery

1N120CND

Contextual Info: L I* n n i C y a £ £ & HGTP1N120CND, HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT Wjth Anti-Parallel Hyperfast Diode ADVANCE INFORMATION November 1998 Features Description • 6.2A, 1200V, T C = 2 5 °C The HGTP1N120CND and the HGT1S1N120CNDS are NonPunch Through NPT IGBT designs. They are new members of

75337S

Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334
Contextual Info: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery

TEXAS INSTRUMENTS laser driver

Abstract: S3017 B78108-S1153-K V23806-A84-C2
Contextual Info: V23806-A84-C32 Single Mode 622 MBd ATM Transceiver 1x9 Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42–0.15) .292–.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004 (4±0.2) .158±.008 a)

Contextual Info: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

DATA SHEET IC 4046

Abstract: FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R
Contextual Info: S E M I C O N D U C T O R FSF250D, FSF250R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 24A, 200V, rDS ON = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: S3 FSF250D, FSF250R June 1997 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS o N = 0.110£i TO-254AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event Safe Operating Area Curve for Single Event Effects