617 00025 Search Results

1N770

Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Contextual Info: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695

SMS1526-10

Contextual Info: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity

DSG6474

Abstract: Alpha Industries handling of beam lead diodes DSM6355 DSG6405 DSG6470-06 DSG6470-30 DSG6474-06 Design with PIN diode alpha
Contextual Info: Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 1 5 0 °C Storage Temperature:

Contextual Info: GaAs Dual Antenna T/R Switch DC-2.5 GHz EBAJ AS113-24 Features • T ransm it to either o f Tw o A n te nn a Ports ■ R eceive from both A n te nn a Ports ■ O perates w ith 0, - 5 Volts ■ Low DC P ow er C onsum ption ■ Low C ost Plastic P ackage Description

Alpha DMK2790

Abstract: AD004T2-00 AD004T2-11 AK006R2-01 AK006R2-10 AS006M1-01 S443 20-50GHz 05e-12
Contextual Info: 03Alpt1 GaAs Beamless Flip Chip Mixer Diodes Single Features • D esigned for High V olum e D esigns ■ High F requency 2 0 - 5 0 G H z ■ E xceeds E nvironm ental R equirem ents for M IC [PC SB Anti-Parallel & Hybrid Applications ■ /U D esigned for Low Junction C a p a c ita n c e & and

Contextual Info: E3Alpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge,

SMV1200-155

Abstract: SMV1400-08 sot 323 5 504 SMV11 SMV1100 SMV1200-149 SMV1200-150 SMV1200-151 SMV1200-49 SMV1200-50
Contextual Info: Plastic Packaged Surface EHJAlph; ’ ' .-as- Mount Varactor Diodes . ./J SMV1100, SMV1200, SMV1400 Series Features Industry Standard Outlines: SOD-323 and SOT SOT 23 Packages B High “Q” Abrupt and Hyperabrupt Junction Designs Single and Common Cathode Configurations

LTR1702-03

Abstract: 502001 hf 01801 LTR1701-01 LTR1701-02 LTR1701-03 LTR1702-01 LTR1702-02 Alpha Industries pin diodes
Contextual Info: El A lpha Low Thermal Resistance, High Power Double Slug PIN Diodes LTR1701, LTR1702, LTR1704 Series Features • Hermetically Sealed ■ 0.6 nH Inductance ■ 500 Volt Breakdown ■ 1.0 to 2.0 pF Capacitance ■ 0.25 Ohm Series Resistance ■ 2.5 W att Power Dissipation

dmj4317

Abstract: DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes EHAIph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication

Contextual Info: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective

DDC4717-018

Abstract: DDC6980-018 DDC2351-024 DDC4717-024 DDC4582-018 DDC6980 DDC2351-018 DDC4562-018 DDC4562-024 DDC4582-024
Contextual Info: Zero Bias Silicon Schottky Barrier E0A lp h a Detector Diodes CDC, DDC Series Features • Zero Turn On, No Bias Required ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for

Contextual Info: EUAIph Surface Mount GaAs MESFET AF100-32 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel Description

DMK2307-000

Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
Contextual Info: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier

SPD3465

Abstract: SPD3510-XX SPD3510
Contextual Info: BÌAlphi Sampling Phase Detectors SPD3465, SPD3471, SPD3472 Series Features • Low Cost Design for Phase Lock ■ Rugged, Modular, Hybrid Construction ■ Phase Locks VCO and DROs up to 20 GHz ■ Wide Frequency Range ■ Available for Oscillator Signal Levels from

AFP02N2-55

Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
Contextual Info: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

AFM02N5-00

Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip

180 Degree hybrid ku band

Contextual Info: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

Contextual Info: GaAs MMIC Diversity Switch in SOIC 8 Plastic Package AS102-12 Features • Extrem ely Low C ost ■ Sm all Package ■ 3 Volt O peration Description T he A S 1 0 2 -1 2 is a 4 port sw itch w ith independent DC vo ltag e control on each port. Its low vo ltag e control

CVG7864-01

Abstract: CVG7864-03 varactor diode q factor measurement CVG7864-02 CVG7864-04 CVG9800 S443 varactor diode capacitance measurement x band varactor diode gaas varactor diodes
Contextual Info: GaAs Hyperabrupt Varactor Diodes EBAIph CVG7864, CVG9800 Series Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon Hyperabrupt

Contextual Info: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■

Contextual Info: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

Contextual Info: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EBAlpha AS373-12 Features • Low Loss <0.5 dB @ 900 MHz ■ Dual Positive Control Logic ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost ■