6139MO Search Results

Contextual Info: Ordering number: EN 2974A 2SA 1700 No.2974A J SAXYO = P N P E p ita x ia l P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications i F eatures . H ig h b reak d o w n voltage • A doption of M B IT pro cess • E x c e lle n t hpE lin e a rity

pa 2030a

Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

2SA1730

Abstract: EN3134
Contextual Info: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.

2044B

Abstract: 2SA1731 ITR04425
Contextual Info: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.

2SA1730

Abstract: ITR04415 ITR04416 ITR04418
Contextual Info: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.

3135a

Contextual Info: O rd e rin g n u m b e r : EN 3 1 3 5 A 2SA1731 No.3135A PN P Epitaxial P lan ar Silicon T ransistor High-Speed Switching Applications Features Package D im ensions 2045B unit: mm |^_ :.5 so & 1 P ackage Dim ensions 2044B (unit : mm) H Ke 6.5 i r 0"5 5.

2044B

Abstract: 2SA1700
Contextual Info: Ordering number : EN 2974A _2 S A 1 7 0 0 PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A bsolute M axim um R atings at Ta = 25°C

2SA1731

Contextual Info: SANYO SEMICONDUCTOR CÔRP SSE D 7 cH 7 0 7 b 0007CH1 2SA1731 1 T - 3 7 - I S PNP Epitaxial Planar Silicon Transistor 2044 High-Speed Switching Applications S3135A F e a tu re s • Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage

2SC4003

Abstract: bau 95
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity

Contextual Info: Ordering number:EN 2960 _2SC4002 J SAXYO N P N Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of M BIT process • Excellent hpE linearity A b s o lu t e M a x im u m R a tin g s a tTa = 25°C

2SA1730

Contextual Info: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2SC4002

Abstract: ITR06235 ITR06236
Contextual Info: 2SC4002 Ordering number : ENN2960A NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C

2044B

Abstract: 2SC4003
Contextual Info: Ordering number:EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SC4003] 1 : Base

2SA1730

Contextual Info: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed

c 3135-3

Abstract: 2044B 2SA1731
Contextual Info: Ordering number:EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions

2044B

Abstract: 2SC4003 ITR06242 ITR06243 STF3
Contextual Info: Ordering number:ENN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2045B [2SC4003] 2.3 5.5 1.5 6.5 5.0

2SC4002

Abstract: ITR06235 ITR06236 ITR06237
Contextual Info: Ordering number:ENN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SC4002] 5.0 4.0 5.0

2SC4498

Abstract: 2SA1722
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

Contextual Info: O rd e rin g n u m b e r: EN 3 1 3 4 SA\YO i t 2SA1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s •Adoption of FBET, MBIT processes • Large current capacity ■Low collector-to-emitter saturation voltage

Contextual Info: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

2044B

Abstract: 2SC4003 ITR06242
Contextual Info: 2SC4003 Ordering number : ENN2959B NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C

2SC4002

Contextual Info: Ordering number: EN 2960 No.2960 _ 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity Absolute Maximum Ratings at Ta = 25°C

2005A

Abstract: 2SC4002
Contextual Info: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C

2959A

Abstract: 2044b 2SC4003
Contextual Info: Ordering n u m b e r:E N 2 9 5 9 A 2SC4003 N 0.2959A SAiYO NPN Triple Diffused P lanar Silicon Transistor i High-Voltage Driver Applications F e a tu re s . High breakdown voltage •Adoption of MBIT process •Excellent hpE linearity A b so lu te M axim u m R a tin g s a t Ta = 25°C