60V DUAL N-CHANNEL TRENCH MOSFET Search Results

ZXMN6A11DN8

Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
Contextual Info: ZXMN6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to provide excellent RDS ON and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. VDS (V) = 60V

Contextual Info: AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to provide excellent RDS ON and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. VDS (V) = 60V

d51a

Contextual Info: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN6A25DN8

Abstract: ZXMN6A25DN8TA ZXMN6A25DN8TC
Contextual Info: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

AO4828

Contextual Info: AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.5A (VGS = 10V)

6a25d

Contextual Info: ZXMN6A25DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V: RDS(ON)= 0.055 ; ID= 4.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMN6A09DN8

Abstract: ZXMN6A09DN8TA ZXMN6A09DN8TC
Contextual Info: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

AO4828

Contextual Info: AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 4.5A (VGS = 10V)

D51A

Abstract: 51A SOIC ZXMN6A09DN8TA diode 1407
Contextual Info: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ao4826

Contextual Info: AO4826 60V Dual N-Channel MOSFET General Description Product Summary The AO4826 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V ID = 6.3A (VGS = 10V)

ZXMN6A09DN8

Abstract: ZXMN6A09DN8TA ZXMN6A09DN8TC
Contextual Info: ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.045⍀ D=5.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,

Contextual Info: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)

Contextual Info: Dual N-channel MOSFET ELM14826AA-N •General description ■Features ELM14826AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=6.3A (Vgs=10V) Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=4.5V)

Contextual Info: Dual N-channel MOSFET ELM34804AA-N •General description ■Features ELM34804AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=4.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)

Contextual Info: Dual N-channel MOSFET ELM14826AA-N •General description ■Features ELM14826AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=6.3A (Vgs=10V) Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=4.5V)

Contextual Info: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)

TS16949

Abstract: ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25DN8TC 6A25D
Contextual Info: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of

Contextual Info: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of

6A25D

Contextual Info: ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.050 @ VGS = 10V 5 0.070 @ VGS = 4.5V 4.2 Description D1 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of

Contextual Info: AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Complementary

Abstract: AO4611 if63 di 2417
Contextual Info: AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Contextual Info: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast