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    Diodes Incorporated ZXMN6A11DN8TA

    MOSFET 2N-CH 60V 2.5A 8SO
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    Torex Semiconductor LTD XC9236A11DER-G

    IC REG BUCK 1.1V 600MA 6USPC
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    Torex Semiconductor LTD XC9236A11D0R-G

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    Diodes Incorporated ZXMN6A11DN8TC

    MOSFET 2N-CH 60V 2.5A 8SO
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    Torex Semiconductor LTD XC9236A11D4R-G

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    6A11D Datasheets Context Search

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    ZXMN6A11DN8

    Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
    Contextual Info: 6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original
    ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d PDF

    ZXMN6A11DN8

    Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC
    Contextual Info: 6A11DN8 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original
    ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC PDF

    ZXMN6A11DN8TA

    Abstract: ZXMN6A11DN8 6a11d
    Contextual Info: 6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original
    ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8 6a11d PDF

    Contextual Info: 6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original
    ZXMN6A11DN8 PDF