60S Search Results

s60 39

Abstract: S6A2067 lcd s6a2067 code marking s47 Marking S58 S6A2067 RoHS S6A0065 S6A2068 SC40 ic 2358
Contextual Info: 16COM/60SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD S6A2068 INTRODUCTION The S6A2068 is a dot matrix LCD driver & controller LSl which is fabricated by low power CMOS technology. FUNCTION — Character type dot matrix LCD driver & controller — Internal driver: 16 common and 60 segment signal output

Contextual Info: 60SHSZUUV Am 25LS09 Quad Two-Input, High-Speed Register DISTINCTIVE CHARACTERISTICS • • • 4-bit register accepts data from one-of-two 4-bit input fields Edge triggered clock action Second sourced by T.l. as 54LS/74LS399 Am25LS D.C. parameters including:

0148-t

Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)

TPCA8101

Contextual Info: TPCA8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8101 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 5.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.)

tim5964-60sl

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level n HIGH POWER P1dB=48.0dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.4GHz

Contextual Info: V1.1 REVISIONS DISCRETION APPROVED SYM DATE APPROVED A A “ CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! SYM A A DISCRETION DATE 2-#4 -40 UNC ELECTRICAL: CONTACT CURRENT RATING: 1 AMP DIELECTRIC WITHSTANDING VOLTAGE: AC 1000/60SEC RMS

TIM5964-60SL-251

Contextual Info: PRELIMINARY March 2001 TIM5964-60SL-251 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT 47.0 48.0  dBm 7.5 8.5  dB IDS  13.2 15.0 Power Added Efficiency ηadd  41  % 3rd Order Intermodulation

papst

Abstract: KM33 100S 150F KM111 ddb6u145n16k 4658 km11d
Contextual Info: B6U - Schaltung Luftselbstkühlung TA = 45 °C verstärkte Luftkühlung TA = 35°C mit ISOPACK Typenbezeichnung Bauelement click on "Maßbild" No. for download Kühlkörper Lüftertyp Maßbild B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC

THX14J70

Abstract: THX14J71 THX14J72 THX14K70 THX14M01 THX14M02 THX14M74 THX14P70 THX14Q70 1412
Contextual Info: T1/CEPT/ISDN PRI TRANSFORMERS SINGLE THROUGH-HOLE Networking Components FEATURES APPLICABLE TO LEADING TRANSCEIVER CHIPS T 1 HX 4J7 SINGLE THROUGH-HOLE MODELS AVAILABLE PROVIDE 1500Vrms-60Sec. ISOLATION USED UL 94V MATERIALS EXTENDED OR STANDARD TEMPERATURE RANGE MODELS ARE AVAILABLE

IR 60S10

Abstract: IR 60S05 60s10 60S1 60s6
Contextual Info: MCC Features • • • • • • • 60S05 thru 60S10
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 6 Amp Axial-Lead Glass Passivated Rectifier 50 - 1000 Volts Glass Passivated Chip Low Forward Voltage Drop

VR-61SS

Abstract: VR-60SS VR-61SS equivalent
Contextual Info: VF V IFSM (A) Rth (j- ) (°C/W) Mass (g) –40 to +100 20 0.3 –40 to +100 20 0.3 1.2 –40 to +100 20 0.3 50 0.6 –40 to +100 20 0.3 50 0.9 –40 to +100 20 0.3 IF (µA) max VF (V) 20 0.2 IF (mA) Part Number 1.5 max 1000 VR-60SS 2.3±0.25 1 2.75±0.25

Contextual Info: Class A Amplifier with 2 Independent Gain Blocks G E IM IM U M C O R P O R A T I O N GP509 DATA SHEET 60S FEATURES DESCRIPTION • low amplifier current typical 105 |iA Th e G P 5 0 9 is a C la s s A a m p lifie r u tiliz in g G e n n u m ’s p ro p rie ta ry

LF8731

Abstract: Delta LF8731 LF8708 RX-3 -G LF8707 LF8258 RX-2 -G LF8264 LF8741
Contextual Info: FAST ETHERNET 10BASE-T/100BASE-TX TRANSFORMER MODULES Networking Components LF 82 58 o ELECTRICAL CHARACTERISTICS @25 C Rise Time & Fall Time @5.0ns Max , Hi-Pot Test @60Sec, 1500Vrms, OCL @8mA DC Bias 350uH (Min) Model LF8258 LF8264 LF8702 LF8703 LF8707

lf8505

Abstract: LF8275 lf8505 delta Delta LF8505 LF8508 LF8504
Contextual Info: FAST ETHERNET 10BASE-T/100BASE-TX TRANSFORMER MODULES Networking Components LF 82 75 o ELECTRICAL CHARACTERISTICS @25 C Rise Time & Fall Time @5.0ns Max , Hi-Pot Test @60Sec, 1500Vrms, OCL @8mA DC Bias 350uH (Min) Insertion Loss (dB Max) 1~100 MHz Model LF8275

151GD12E4S

Abstract: semikron SKS B6CI SKs 83 SKS 83F
Contextual Info: SKS 83F B6CI 58 V12 Characteristics Symbol Conditions min. typ. max. Unit 83 A 66 A 50 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min VCES

semikron SKS

Abstract: SEMiX 202GB12E4s capacitor semikron
Contextual Info: SKS 100F B6CI+B6HK 69 V12 Characteristics Symbol Conditions min. typ. max. Unit 100 A 81 A 68 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min

semikron sks 85f

Abstract: capacitor semikron semikron SKS 151GD12E4S
Contextual Info: SKS 85F B6CI+B6U 59 V12 Characteristics Symbol Conditions min. typ. max. Unit 85 A 60 A 50 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min

diode T 77

Contextual Info: PD- 91751A International IÖR Rectifier IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.59V v o ta g e drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

Contextual Info: Axial Leads/Mini-Resistor GENERAL DESCRIPTION D AVX HR Series Axial Leaded Resistor Case Material: Plastic Shell Lead Material: 60Sn/40Pb Solder Plated C A B Dimensions: Millimeters Inches HOW TO ORDER HR01 A B C D 104 J AVX Style Resistance Tolerance HR01

Contextual Info: International I R Rectifier PD - 91785 IRG4IBC20W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage © • Industry-benchmark switching losses improve

Contextual Info: IGDD6-4-426-D3816-E1F12-BL-FA Characteristics Symbol Conditions min. typ. max. Unit 680 A 670 730 A 520 780 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

semikron gd-11 semikube

Contextual Info: IGD-8-426-E1F12-BH-FA Characteristics Symbol Conditions min. typ. max. Unit 1490 A 1460 1600 A 1140 1700 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

Contextual Info: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES

LF92

Abstract: LF9207A
Contextual Info: 100/1000BASE-T TRANSFORMER MODULES Networking Components LF 92 07 A o ELECTRICAL CHARACTERISTICS @25 C Rise Time & Fall Time @5.0ns Max , Hi-Pot Test @60Sec, 1500Vrms, OCL @8mA DC Bias 350uH (Min) Insertion Loss (dB Max) Model Return Loss (dB Min) Cross Talk