2SC2290
Abstract: 12ID 2SC2290 equivalent
Contextual Info: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)
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2sc229030mhz28mhz60wpep+5000mhz001mhz961001eaa212id2sc2290 equivalent
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2SC2290
Abstract: 2SC2290A
Contextual Info: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)
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2sc2290a30mhz28mhz60wpep+2-30db2sc2290
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2SC2290
Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
Contextual Info: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)
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2sc229030mhz28mhz60wpep+5-30db001mhz000mhztransistor 2sc22902sc2290 equivalent
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2SC2290
Abstract: 2SC2290 equivalent
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 ~3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power PO=60WPEP Minimum Gain Gpe=ll.8dB Efficiency nc=35/¡ (Min.) IMD=-30dB(Max.)
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2sc229028mhz60wpep-30db+4iidle-50ma150pf200pf2sc2290 equivalent
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2sc2290
Contextual Info: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)
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2sc2290a30mhz28mhz60wpep+3-30db2-13b1a2sc2290
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2-13B1A
Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
Contextual Info: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)
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2sc229028mhz60wpep--30db+4961001eaa22-13b1atransistor s5b2sc2290 equivalent
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2SC2290 equivalent
Abstract: 2SC2290A 2SC2290 60WPEP
Contextual Info: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)
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2sc2290a30mhz28mhz60wpep+3-30db2sc2290 equivalent2sc2290
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Contextual Info: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain
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2sc229028mhz60wpep961001eaa2 |
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2SC2290
Abstract: TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22
Contextual Info: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)
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2sc229030mhz28mhz60wpep+7-30db001mhz000mhztransistor 2sc2290linear ic guide2-13b1a2sc22
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60WpEp
Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
Contextual Info: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)
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2sc229030mhz28mhz60wpep+9-30db961001eaa210wv12idthe industrial linear0.8 enamel coated copper wire, 9id, 20t2-13b1aj-021transistor 2sc2290
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POWER 28V 3A 60W
Abstract: 0809LD60 200 watt hf mosfet
Contextual Info: R.0.2P.991602-BEHRE 0809LD60 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QT Common Source The 0809LD60 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The
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991602-behre0809ld60900mhz60wpep+2power 28v 3a 60w200 watt hf mosfet
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POWER 28V 3A 60W
Abstract: 0809LD60P 200 watt hf mosfet mosfet ghz
Contextual Info: R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QU Common Source The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The
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991602-behre0809ld60p900mhz60wpep+3power 28v 3a 60w200 watt hf mosfetmosfet ghz
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SD1405
Contextual Info: S G S -T K O M S O N SD1405 \u RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ . ■ ■ 30 MHz 12.5 VOLTS COMMON EMITTER IMD -3 2 dB GOLD METALLIZATION ■ P out = 75 W MIN. WITH 13 dB GAIN DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon
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An Introduction to Broadband Impedance Transformation for RF Power Amplifiers
Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
Contextual Info: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T
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an-721an introduction to broadband impedance transformation for rf power amplifierstransistor substitution chartmichael hiebel fundamentals of vector analysis+3broadband impedance transformationsmithmotorola small signal transistors
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