600V 75A Search Results
600V 75A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LMZM23600V5SILT | Texas Instruments | 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| LMZM23600V5SILR | Texas Instruments | 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| LMZM23600V3SILT | Texas Instruments | 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| LMZM23600V3SILR | Texas Instruments | 36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| TMCS1101A1BQDT | Texas Instruments | ±600V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125 |
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600V 75A Price and Stock
GEFRAN spa F061612 (GTS-75/60-A-0 (600V/75A))SINGLE-PHASE SOLID STATE RELAY, UP TO 120A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F061612 (GTS-75/60-A-0 (600V/75A)) | Bulk | 6 Weeks | 1 |
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Get Quote | |||||
GEFRAN spa F061547 (GS-75/60-D-0 (600V/75A))SINGLE-PHASE SOLID STATE RELAY, UP TO 120A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F061547 (GS-75/60-D-0 (600V/75A)) | Bulk | 1 |
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GEFRAN spa F061589 (GTS-75/60-D-0 (600V/75A))SINGLE-PHASE SOLID STATE RELAY, UP TO 120A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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F061589 (GTS-75/60-D-0 (600V/75A)) | Bulk | 1 |
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Get Quote | ||||||
600V 75A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 75 = 75A-600V |
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5a-600v | |
IXXR110N60B4H1Contextual Info: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings |
Original |
5-30khzic110ixxr110n60b4h1isoplus247tm+1 | |
75N60Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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ixxh75n60b3d1ic110125nso-247+4 | |
IRGPC56Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate |
OCR Scan |
4fl5s45sirgpc56o-247ac554s2+1 | |
25A 1200V
Abstract: PM100RLA120 PM150CLA120 PM75CLA120 PM75CLA060 PM75CLB120 transistor 600V 75A PM100CLA060 PM150CLA060 PM200CLA060
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pm25rla120pm25rlb120pm75cla060pm75clb060+12 | |
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Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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ic110ixxh75n60b3d1125nso-247+2 | |
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Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter Uninterruptible Power Supplies |
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aptcv60tlm24t3g | |
SIDC30D60E6Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for: |
Original |
sidc30d60e6c67047-a4679a0014183m | |
APT0406
Abstract: APT0502 NTC 10 thermistor
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aptcv60tlm24t3gapt0406apt0502ntc 10 thermistor | |
SIGC40T60R3Contextual Info: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for: |
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sigc40t60r3q67050a4347-a101l7821a | |
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Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC30D60E6 VR 600V IF 75A A This chip is used for: |
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sidc30d60e6c67047-a4679sawn4183m | |
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Contextual Info: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for: |
Original |
sigc40t60r3q67050a4347-a101l7821a | |
E80276
Abstract: PM75RVA060
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Original |
pm75rva06020khze80276e80271 | |
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Contextual Info: SIGC39T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC39T60S VCE ICn 600V 75A This chip is used for: |
Original |
sigc39t60sq67050a4394-a101l7571d | |
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Servo Motor forward revers control
Abstract: E80276 PM75RVA060
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pm75rva06020khze80276e80271+1 | |
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Contextual Info: APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter Uninterruptible Power Supplies |
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aptcv60tlm45t3g | |
APT0406
Abstract: APT0502
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aptcv60tlm45t3gapt0406apt0502 | |
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Contextual Info: SIGC40T60R3 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC40T60R3 VCE ICn 600V 75A This chip is used for: |
Original |
sigc40t60r3q67050a4347-a101l7821a | |
SIDC30D60E6Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for: |
Original |
sidc30d60e6c67047-a4679a0014183m | |
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Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC30D60E6 VR 600V IF 75A A This chip is used for: |
Original |
sidc30d60e6c67047-a4679sawn4183m | |
SIDC30D60EContextual Info: Preliminary SIDC30D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC30D60E 600V ICn 75A A This chip is used for: |
Original |
sidc30d60ec67047-a46794183e | |
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Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT |
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pm75rva06020khze80276e80271+1 | |
SIDC30D60E6Contextual Info: Preliminary SIDC30D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC30D60E6 600V IF 75A A This chip is used for: |
Original |
sidc30d60e6c67047-a4679a0014183m | |
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Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies |
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aptcv60tlm24t3g | |