600V 12A TO220F Search Results

cef12n6

Abstract: CEP12N6
Contextual Info: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).

R6012AN

Contextual Info: R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

r6012anx

Contextual Info: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6012ANX

Contextual Info: R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

mosfet 600V 20A

Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Contextual Info: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce

Contextual Info: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.

Contextual Info: VDRM HTx12-600 = 600 V 3.Gate IT RMS = 12.0A 600V 12A TRIAC 2.T2 1.T1 1.T1 2. T2 3. Gate FEATURES ‰ Repetitive Peak Off-State Voltage: 600V ‰ R.M.S On-state Current (IT(RMS)=12A) ‰ High Commutation dv/dt HTP12-600 HTS12-600 General Description The TRIAC HTP12-600 is suitable for AC switching application, phase

Mosfet

Abstract: SSF12N60F
Contextual Info: SSF12N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.55Ω (typ.) ID 12A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications

2gat

Contextual Info: HTS138-600 HTS138-600 INSULATION TYPE TRIAC TO-220F VDRM = 600 V IT(RMS) = 12A FEATURES 3.T2 Symbol ‰ ‰ ‰ ‰ Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=12A) High Commutation dv/dt Isolation Voltage (VISO=1500VAC) 2.Gate 1.T1

Contextual Info: SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V

Contextual Info: MITSUBISHI Nch POWER MOSFET FL12KM-12A •§;> >>•+. :W> ^ »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING Dim ensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V

Contextual Info: KSM12N60C/KSMF12N60C 600V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 12A, 600V, RDS on = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

AOTF12N60

Abstract: AOT12N60 VDS-100V AOTF12
Contextual Info: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

H12N60F

Abstract: H-10N h12n60 H10N60F mosfet p 30v 60a
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/4 MICROELECTRONICS CORP. H12N60F H12N60F N-Channel Power MOSFET 600V,12A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching

relay 6v 100 ohm

Abstract: electronic relay 6v phase control trigger ht138f IT15A
Contextual Info: HT138F-600 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F

BCR12PM

Contextual Info: Preliminary Datasheet BCR12PM-12LC R07DS1242EJ0400 Previous: REJ03G1261-0300 Rev.4.00 Dec 24, 2014 600V – 12A - Triac Medium Power Use Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

AOTF12N60

Abstract: AOT12N60 AOT4N60
Contextual Info: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: Single N-channel MOSFET ELM3C1260A •General description ■Features ELM3C1260A uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=12A • Rds(on) < 0.65Ω (Vgs=10V) ■Maximum absolute ratings

12N60L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

UTC12N60

Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.