600UH Search Results

Contextual Info: 2. S c h e m a t i c : 1. M e c h a n ic a l D im e n s i o n s : 1 oPRI -o 4 o- 8 SEC 2 O- -o 5 Shleld 6 o- 3. E l e c t r i c a l S p e c i f i c a t i o n s : OCL: Pins 1 - 4 600uH Min 100KHz 0.1V OCL: Pins 1 - 4 500uH Min 1 QQKHz D.1V -4 0 C to +85C LL; Pins 1 - 4

S1308M

Abstract: electronic transformer S130
Contextual Info: T1/ CEPT/ISDN-PRI TRANSFORMER P/N: S1308M DATA SHEET Page : 1/ 1 Feature l l l l l l Designed to meet UL requirements for reinforced insulation. Extended temperature range. Dual SMT package contains both transmit and receive transformers. At -40°C,OCL is 600uH minimum. All other parameters

Contextual Info: Bothhandusa.com S8678M T1/E1/CEPT/ISDN-PRI TRANSFORMER P/N:S8678M DATA SHEET Pag1/ 1 Feature l l Dual SMT package contains both transmit and receive transformers. Models matched to leading transceiver ICs. At-40°C, OCL is 600uH minimum. All other parameters

electronic transformer

Contextual Info: T1/E1/CEPT/ISDN-PRI TRANSFORMER P/N:S8678M DATA SHEET Pag1/ 1 Feature l l Dual SMT package contains both transmit and receive transformers. Models matched to leading transceiver ICs. At-40°C, OCL is 600uH minimum. All other parameters are specified at +25°C.

pulse transformer

Abstract: RX-2 -G HI-POT TME40H018-R hipot pulse 100KHz transformer 600uH Quad-Port transformer
Contextual Info: Quad Port T1/E1 PULSE TRANSFORMER ELECTRICAL CHARACTERISTICS @ 25 degrees Centigrade Operating Temperature : 0-70 degrees Centigrade Inductance Model PRI @100KHz 0.2V TME40H018-R 600uH MIN Leakage Inductance Interwinding Capacitance DC Resistance (PRI ,SHORT SEC)

Contextual Info: 2 . S c h e m a tic : i. M echanical D im ensions: 1:1 -O 4 1 O- E3 2 o- -O 3 D - 1.100 - 3. E l e c t r i c a l S p e c i f i c a t i o n s : ± 0 .0 5 0 OCL: 600uH Min @ 1KHz 0 : 5 Min @1KHz DCR: 0 .0 2 3 1.0V, Each Wdg 1.0V, Each Wdg Ohm s Max,

Contextual Info: InNET TECHNOLOGIES tecllno^ ^ e jj 3 t T2026B Electrical E L E C T R I C A L S PE C IFIC A TIO N S (REV. X2 TURNS RATIO : 2 -4 -6 1CT : 1CT ± 3% : 1 -3 -5 1CT ! 1CT INDUCTAN CE: 2 -6 -1 -5 : 1.2mH MIN. 0.1V, 10KHz O ROOM TEMPERATURE : 600uH MIN. O 0.1V, 10KHz O -40*C TO +85*C

600uh

Abstract: inductor 600UH 600uH inductor
Contextual Info: 1. M echanical Dim ensions: 2 . S c h e m a t ic : o O x I— 0.5 0 0 - J o 3. E le c tr ic a l o S p e c ific a tio n s: @25°C ro • 0 .8 0 0 — Max o OCL; 7 6 2 u H ± 1 5% @ 1 0 K H z L with 0.9 5 Ad c : 600uH DC R e s is ta n c e : 0 .2 4 0 XFMRS Inc

208H

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : 1 O- -o 2 4 o- -0 3 3. Electrical Specifications: OCL: 2 8 .0 m H Min @1KHz 0.1V. Q: P ins 15 Min @1KHz 0.1V 1 -4 LL: Pins 1 -4 600uH Each Wdg Max @1KHz 0.1V S h o rt al else DCR: 1.08 Ohms Max, Each Wdg

Contextual Info: 1. Mechanical Dimensions: 2. A 13.80 S c h e m a t ic : 15.20 m -H h- t i —H h D.70 2.49 2 o— C 6.80 Max — W :0.30±0.15 JP r»- T — o 10 1.20 p - 9.96 — j Electrical wn n w it □CL: Pinsl —2 600uH Min @100KHz 0.1V □CL: Pinsl 0 -2 ,4 -1 0 289uH Min @100KHz 0.1V

Contextual Info: 1. D i m e n s i o n s : E le c tric al Isolation: 1500 Vrm s PRI to SEC TX Turns Ratio: 1.10 Typ o 1:2CT ±2% (PRLSEC) RCV Turns Ratio: 1:1 CT ±3% "ö ; X C\| J 1 RCV PRI OCL: 600uH M inim um @100KHz 50m V C w /w : 40pF Maximum @100KHz 50m V (PRI/SEC)

Contextual Info: InNET TECHNOLOGIES T2069 Electrical E L E C T R I C A L S PE C IFIC A TIO N S REV. X TURNS RATIO: 1 -5 : 2 -4 -6 1 : 4CT ± 3% 4CT 1 1 INDUCTANCE: 1 -5 : 600uH MIN. O 0.1V, 10KHz LEAKAGE INDUCTANCE: 1 -5 WITH (2,4,6 SHORT) : 1.0uH MAX. O 1MHz INTERWINDING CAPACITANCE:

T2010

Contextual Info: InNET TECHNOLOGIES te c h n o j^ i es 6 1 T2010 Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 01 TURNS RATIO: 1CT • 2CT : 2CT : 1CT ± 3% (2 -4 -6 ) : (1 -3 -5 ) INDUCTANCE: (1 -5 ) : 1.2mH MIN. O 0.1V, 10KHz O ROOM TEMPERATURE : 600uH MIN. O 0.1 V. 10KHz O - 4 0 X TO + 8 5 X

Contextual Info: InNET TECHNOLOGIES te c h n o j^ i es 6 1 T2611S Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. X I TURNS RATIO: 1 -2 -3 : 6 -5 -4 : 1CT : 2CT ± 3X INDUCTANCE: 1.2mH MIN. O 0.01V, 10KHz, 25’C 600uH MIN. O 0.01V, 10KHz, -4 V C TO + 85,C 1 -3

Contextual Info: InNET TECHNOLOGIES tecllno^ ^ e jj 3 t T2057B Electrical E L E C T R I C A L S PE C IFIC A TIO N S (REV. X1 TURNS RATIO : 2 -4 -6 1CT : 2CT ± 3% : 1 -3 -5 2CT I 1CT INDUCTAN CE: 2 -6 : 1.2mH MIN. 0.1V, 10KHz O ROOM TEMPERATURE : 600uH MIN. O 0.1V, 10KHz O -40*C TO +85*C

hh-030

Contextual Info: 1. D im e n s i o n s : 3. E l e c t r i c a l Isolation: S p e c i f i c a t i o n s : @25°C 1500 Vrms PRI to SEC 1.115 M ax TX Turns Ratio: 1 :1 .2 6 ± 2 % (PRI:SEC) RCV Turns Ratio: 1:1.26=1:2% (PRI:SEC) PRI OCL: 1.20mH PRI OCL: 600uH Minimum @100KHz 50mV -l-25'C

Contextual Info: InNET TECH N O LO GIES te c lln o ^ ^ e j j 3 t T2082S Electrical E L E C T R I C A L S PE C IFIC A TIO N S (REV. 01 TURNS RATIO: (1 2 - 1 1 - 1 0 ) : ( 1 - 2 - 3 ) : 1CT : 2.3CT ± 2% (4 -5 -6 ) : (9 -8 -7 ) : 1CT : 2CT ± 2% INDUCTANCE: : 1.2mH MIN. O O.IVrms, 10KHz; ROOM TEMPERATURE

Contextual Info: TERM. N O .’ s FOR REF. -A - ONLY ^ .0 0 4[.1 0] . 2 8 0 REF. [7 .1 1 ] . 0 7 5 REF. [1 .9 1 ] 16 1 15 2 14 3 13 4 12 5 11 6 10 7 co n=n T .3 7 0 ± .0 1 0 [9 .4 0 ± .2 5 ] \ = ♦ . 2 1 0 MAX. [5 .3 3 ] #1 . 5 1 0 MAX. [1 2 .9 5 ] 00 r-r- DOT LOCATES TERM.

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: UPPER ROW LDWER ROW 1000PF, 2KV 1: 1 : w75v — « juult 1: 1 75 1000PF, 2KV NDTES 1,0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: -4 0 ‘ C TO + 8 5 'C 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 - J 2 )

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)

T 948

Abstract: l85c
Contextual Info: 1. M echanical D im en sion s 2. S c h e m a t ic : 1 o— -o 10 2 o- -o g 3 o- -o 4 o- -o 7 0 .0 3 0 D 0 .0 9 6 ' r O 1 O n n R • XFMR5 XF6006 f 0 .4 9 0 M a x. SEC PRI 12V g ±5V X a Lü o LO in d -E P 13S YYWW y y y y y. 10 A ♦ C o n n e c t Pins 9-I-8, 2 + 3

U28-5

Contextual Info: 2 . S c h e m a tic : 1. D i m e n s i o n s : 0.5 0 Max —• 161514 0 0 0 0 .2 1 5 Max ■* " f" ^ 0.020 1 0.008 0 .0 3 0 - J UI 0 .0 1 6 0 .0 2 0 TypJ PRI SEC 3 6 7 8 TX . 3 5 ^ YYWWP1 ödödödöd ¥ M o.oia±o.oo2 RCV 0 5 0 öööööööö^l XFMRS 3 XF6006B5

te019

Abstract: eltek 821-M0864 ic of 4543 elec & eltek Elec Eltek QuadFALC eltek 821
Contextual Info: T1/E1/CEPT/ISDN-Pri TRANSFORMER MODULE E & E Magnetic Products Limited Quad Port, with TVS protection at line side, SOIC, Extended Temperature Range Four transmit transformers, four receive transformers and line side protection circuit in a single SMT package