600S3 Search Results

Contextual Info: TECHNICAL DATA SHEET RPC-3.50 03K421-600S3 PANEL JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Mechanically compatible with IEC 60169-23 RPC-2.92 and SMA Documents Panel piercing B 55D Material and plating RF_35/12.04/3.0

Contextual Info: TECHNICAL DATA SHEET RPC-3.50 03K421-600S3 PANEL JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Mechanically compatible with IEC 60169-23 RPC-2.92 and SMA Documents Panel piercing B 55D Material and plating RF_35/12.04/3.0

NE552R479A

Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.

mch215f104zp

Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

Rogers 4350B

Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of

Contextual Info: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage

600S3R9AT

Contextual Info: Freescale Semiconductor Technical Data MW5IC2030M Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS

DCS1800

Abstract: NE5520279A NE5520279A-T1
Contextual Info: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15

600S3R9BT

Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of

2170S

Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in

AGRC10GM

Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Contextual Info: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor

GRM422Y5V106Z050AL

Abstract: PTMA210452EL PTMA210452FL RO4350
Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical

Contextual Info: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •

Contextual Info: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics

IC 406

Contextual Info: MOTOROLA Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC

A113

Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M MW5IC2030MBR1 MW5IC2030NBR1 600s3r9at
Contextual Info: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.

600S2R7BT250XT

Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency

Contextual Info: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MSC23109C

Abstract: 0A205
Contextual Info: O K I S em ic o n d u cto r M SC 23109C /C L-X X PS3 1,048,576-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23109C/CL-xxDS3 is a fully decoded 1,048,576-w ord x 9-bit CMOS Dynamic Random Access M emory M odule com posed of two 4-Mb DRAMs 1M x 4 in SOJ packages and

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip

Contextual Info: O K I Semiconductor M SC23109C/CL-XXPS3 1,048,576-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23109C/CL-xxDS3 is a fully decoded 1,048,576-word x 9-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 1M x 4 in SOJ packages and

PTMA210452FL

Abstract: PTMA210452EL
Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452FL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use

AD811A

Contextual Info: High Performance Video OpAmp AD811 ANALOG DEVICES FEATURES High Speed 140 MHz Bandwidth 3 dB, G = +1 120 MHz Bandwidth (3 dB, G = +2) 35 MHz Bandwidth (0.1 dB, G = +2) 2500 V/(j.s Slew Rate 25 ns Settling Time to 0.1% (For a 2 V Step) 65 ns Settling Time to 0.01% (For a 10 V Step)

600S3R9AT

Abstract: GRM-215 Marking Z7 Gate Driver MOTOROLA LOT MARKINGS A113 AN1955 AN1987 MW5IC2030GNBR1 MW5IC2030NBR1 600S2R2AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 7, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage