6000V POWER DIODE Search Results

Contextual Info: AUGUST 1995 DS2012SF DS4191-2.3 DS2012SF RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 6000V VRRM 1015A IF AV 16500A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 Average forward current. . 1700A • V r r m Repetitive peak reverse voltage. . 6000V • Q rr Reverse recovery charge. . 1500jiC

thyristor cdi

Abstract: 6000v power diode FD3000AU-120DA dc cdi 6300a thyristor 2800A gct thyristor
Contextual Info: MITSUBISHI SOFT RECOVERY DIODE FD3000AU-120DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING FD3000AU-120DA Dimensions in mm f 130 ± 0.2 f 190max ¡VRRM Repetitive peak reverse voltage . 6000V ¡IT AV Average on-state current . 3000A

DS1112SG60

Contextual Info: @ DS1112SG M IT E L Rectifier Diode S E M IC O N D U C T O R Supersedes January 1997 version, DS4181 - 3.1 DS4181 - 3.2 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V IF av,

DS4191

Contextual Info: DS2012SF MITEL @ Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V I F a v ,

application FULL WAVE RECTIFIER

Abstract: FD2000DU-120
Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 OUTLINE DRAWING Dimension in mm φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 φ 130 ± 0.2 ● IF AV Average forward current .1700A ● VRRM Repetitive peak reverse voltage .6000V

Contextual Info: Si GEC P L E S S E Y august 1995 S E M I C O N D U C T O R S DS4191-2.3 DS2012SF RECTIFIER DIODE KEY PARAMETERS VRRM 6000V lF Av, 1015A lFSM 16500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.

FD1500AU-120DA

Abstract: gct thyristor
Contextual Info: MITSUBISHI SOFT RECOVERY DIODE ARY FD1500AU-120DA MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD1500AU-120DA

STATIC VAR COMPENSATOR

Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
Contextual Info: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.

Contextual Info: TOSHIBA TENTATIVE INVERTER APPLICATION SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX27 Repetitive Peak Off-State Voltage V d RM = 6000V R.M.S On-State Current i T RMS = 2700A Peak Turn-Off Current i T G Q M = 6000A Critical Rate of Rise of On-State Current : d i/d t = 500A / jus

RECTIFIER DIODES ON Semiconductor

Abstract: Thyristors GTO 6500V "Power Semiconductor Applications" Fast Switching Thyristors
Contextual Info: Westcode semiconductors and Brush Traction engineer longer life for ySTs In 2003/4, Brush Traction was tasked with refurbishment of the HSTs electrical equipment. These popular workhorses, now 30 years old, need to be easily maintainable and fully supported

6000v power diode

Abstract: T1250V M6000A toshiba LTM 08 SG6000JX27
Contextual Info: TOSHIBA TENTATIVE INVERTER APPLICATION • • • • • • SG6000JX27 TOSHIBA GATE TURN-OFF THYRISTOR SG6000JX27 Unit in mm Repetitive Peak Off-State Voltage : V d r m ;= 6000V R.M.S On-State Current : It RMS = 2700A Peak Turn-Off Current : I tG Q M = 6000A

schematic thyristor based inverter

Abstract: HIGH VOLTAGE DIODE 6kv Thyristor 6kV GTO MODULE mitsubishi inverter fr schematic power GCT Thyristor 6kV 500a gct thyristor GTO thyristor 4500V 4000A DIODE 6kv
Contextual Info: A 6KV/5KA REVERSE CONDUCTING GCT Y. Yamaguchi*, K. Oota*, K. Kurachi*, F. Tokunoh*, H. Yamaguchi*, H. Iwamoto*, J. Donlon*, E. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan

TLP721F

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP721F TLP721F OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721.

NTE398

Abstract: transistor VCE 6000V
Contextual Info: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3981 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified

NTE3082

Abstract: NPN Darlington transistor transistor VCE 6000V
Contextual Info: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.

NTE3081

Abstract: transistor VCE 6000V
Contextual Info: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified

transistor VCE 6000V

Abstract: dual infrared diode Infrared Emitting Diode NTE3082
Contextual Info: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line

dual infrared transistor

Abstract: dual infrared diode dual Phototransistor NTE3081 transistor VCE 6000V
Contextual Info: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual−in−line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified

Contextual Info: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line

g84 diode

Contextual Info: RECTIFIER, 6kV, 500mA, 350ns IDIOTI i s t i January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 35QnS

ADD700S28

Abstract: ADD700
Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request

ADD500S33HVI

Contextual Info: POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODES MODULE *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request

Contextual Info: RECTIFIER, 6kV, 500mA, 350ns January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 350nS Vf= 11.2V