600 MHZ RF MODULE Search Results

75-SI

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW6182-6 600 MHz CATV Am plifier Module This module is designed specifically for 600 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7 GH2 fT and an all gold metallization system.

MHW6182

Abstract: MHW6182-6
Contextual Info: MOTOROLA Order this document by MHW6182–6/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW6182-6 600 MHz CATV Amplifier Module This module is designed specifically for 600 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold

Contextual Info: MOTOROLA Order this document by MHW6222–6/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW6222-6 600 MHz CATV Amplifier Module This module is designed specifically for 600 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold

Contextual Info: MOTOROLA Order this document by MHW6185–6A/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW6185-6A High Output Doubler 600 MHz CATV Amplifier Module Designed specifically for 600 MHz CATV applications. Features ion– implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization

Contextual Info: MOTOROLA Order this document by MHW5185B/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW5185B MHW6185B MHW6185-6 High Output Doubler 450/550/600 MHz CATV Amplifier Modules The MHW5185B, MHW6185B, and MHW6185–6 are designed specifically for 450/550/600 MHz CATV applications. Features ion–implanted arsenic

Buffer Amplifiers

Contextual Info: RFMD. Dual Band PLL Family RFMD introduces high-performance dual band PLLs which provide two IF/RF outputs simultaneously. Existing frequency bands for these PLLs are the 600/1390 MHz and 1000/1440 MHz. These 100% RF tested modules integrate two VCOs, two loop

vco 100 mhz

Abstract: PLL Synthesizer Modules VCO 1.5G pj5 data
Contextual Info: PLL Synthesizer Modules Series : PJ2, PJ5 Dual PLL Series PJ2 Series PJ5 Features Integration of RF VCO and Dual PLL-IC into a compact body. Low profile type. Frequency range : RF VCO 600 MHz to 2 GHz,IF VCO 100 MHz to 450 MHz. Meeting requirements for high speed lock up time.

Contextual Info: MOTOiROILA Order this document by MHW6185-6A/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW6185-6A High Output Doubler 600 MHz C A T V Am plifier Module Designed specifically for 600 MHz CATV applications. Features io n implanted arsenic emitter transistors with 7 GHz f j and an all gold metallization

Contextual Info: M O TO R O L A Order this document by MHW6182-6/D SEMICONDUCTOR TECHNICAL DATA M HW 6182-6 The RF Line 600 MHz CATV A m plifier Module Motorola Preferred Device This module is designed specifically for 600 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7 GHz f j and an all gold

Contextual Info: REMEC RF 2.0-18.0 GHz LO 2.0-18.0 GHz IF DC-600 MHz Double Balanced Mixer Ultra-Broadband Electrical Specifications : 1 Conditions Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: Input 1-dB Compression Point: Input Third Order

Contextual Info: REMEC RF 2.0-18.0 GHz LO 2.0-18.0 GHz IF DC-600 MHz Double Balanced Mixer Ultra-Broadband Electrical Specifications : 1 Conditions Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: Input 1-dB Compression Point: Input Third Order

Remec Broadband Wireless

Abstract: 600 MHZ RF MODULE
Contextual Info: RF 2.0-18.0 GHz LO 2.0-18.0 GHz IF DC-600 MHz REMEC Double Balanced Mixer Ultra-Broadband, Hermetically Sealed Electrical Specifications 1 : MM9XXG-21 Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: Input 1-dB Compression Point:

600 MHZ RF MODULE

Contextual Info: REMEC RF 2.0-18.0 GHz LO 2.0-18.0 GHz IF DC-600 MHz Double Balanced Mixer Ultra-Broadband Electrical Specifications : 1 Conditions Parameter SSB Conversion loss:(2) (3) Isolation LO to RF: LO to IF: RF to IF: Input 1-dB Compression Point: Input Third Order

2N6367

Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
Contextual Info: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF

MHW6185

Contextual Info: Order this data sheet by MHW5185B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW 5185B MHW 6185B M HW 6185-6 The RF Line High Output Doubler 450/550/600 MHz CATV A m plifier Modules Motorola Preferred Devices The MHW5185B, MHW6185B, and MHW 6185-6 are designed specifically for

DP104

Abstract: WT11 BlueGiga WT12-A SCADA implementation based on wireless RF technology 433.92 Mhz two-port saw resonator sterio WLNG-EK-DP001 OP4005B 9305 series connectors catalog lte if filter
Contextual Info: Selection Guide – 2008 RF Components Short-range Radios & RFICs Wireless Mesh & Sensor Networking OEM Modules and Standalone Products Wireless Industrial Automation & Control Networking OEM Modules and Standalone Products Wireless LAN / WiFi Networking

SCADA implementation based on wireless RF technology

Abstract: WLNG-EK-DP001 WT12-A 9600 LTE baseband gsm based home security system automation WT11 BlueGiga Diplexer lte wt32 SF2120C military relay
Contextual Info: Selection Guide – 2008 RF Components Short-range Radios & RFICs Wireless Mesh & Sensor Networking OEM Modules and Standalone Products Wireless Industrial Automation & Control Networking OEM Modules and Standalone Products Wireless LAN / WiFi Networking

MHW6182

Contextual Info: MOTOROLA MHW6182-6 600 MHz CATV Amplifier Module LIFETIME BUY This module is designed specifically for 600 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. • Specified for 87–Channel Performance

10MF 35V

Abstract: XD010-04S-D4F AN060 GaN amplifier temperature compensation AGC AMPLIFIER RFMD
Contextual Info: XD010-04S-D4F Y XD010-04SD4F(Y) 350 MHz to 600 MHz Class AB 12 W Power Amplifier Module 350 MHz to 600 MHz CLASS AB 12 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features

LEM2520T

Contextual Info: RF Chip Inductors Miniature, Wirewound Components Pulse RF chip inductors provide high-quality filtering in mobile phones, wireless applications, digital cameras, disk drives and audio equipment. The inductors are also used in multi-purpose RF modules for telecom, automotive and consumer electronic applications. These RF chip

LEM2520T

Abstract: PE-0402CD180KTT PE-0805CCMC361STS 0402CS 0603CS LOW1608A NL2016 PE-0402CD3N3KTT WC701 TAIYO YUDEN LEM
Contextual Info: RF Chip Inductors Miniature, Wirewound Components Pulse RF chip inductors provide high-quality filtering in mobile phones, wireless applications, digital cameras, disk drives and audio equipment. The inductors are also used in multi-purpose RF modules for telecom, automotive and consumer electronic applications. These RF chip

Contextual Info: XD010-04S-D4F Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is

Contextual Info: Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is

VD-1-43

Abstract: Rogers 4350 datasheet AN060 XD010-04S-D4F 10MF 35V
Contextual Info: Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is