VARTA L2 400 640
Abstract: VARTA 170 dk VARTA 500 RST VARTA 250 dk VARTA 100 RST VARTA 100 DKO Battery VARTA 60 DKO Battery VARTA 60 dk VARTA L2 400 varta 225 dkz
Contextual Info: Portable and Micro Batteries Type Range 40 107 ex/0589 \ Standard — Series RS for Normal Rates of Discharge up to 6 CA 60 l10 Type Order-No. for bare cell in shrink sleave Nominal capacity at 0.2 CA Discharge current 0.2 CA Charge current 14 hours RS*
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ex/0589d-3000varta l2 400 640varta 170 dk+8varta 500 rstvarta 250 dkvarta 100 rstvarta 100 dko batteryvarta 60 dko batteryvarta 60 dkvarta l2 400varta 225 dkz
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work-wizard
Abstract: pneumatic arm KZG Series BJ10 M324 M605
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work-wizardpneumatic armkzg seriesbj10+2m324m605
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802830
Abstract: DKPI 24 Vdc 801953 Weidmuller 824204 dkt4 500 DKZ 600 DKZ 801863 DKR 801961 818404 a 2212 opto
Contextual Info: Produktübersicht Minikoppler 6 Digitale Signalverarbeitung 6 6 6 W Ein- und Ausgaben Relaiskoppler DKR Seite 6-6/6 bis 6/7 Ein- und Ausgaben Optokoppler DKO Seite 6-6/8 bis 6/12 SO-Impulsgeber Optokoppler DKO Seite 6-6/13 6 Schaltverstärker Optokoppler DKO
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95/100u135/155u10-poliges802830+9dkpi 24 vdc 801953 weidmuller824204dkt4500 dkz600 dkz801863dkr 801961818404a 2212 opto
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Contextual Info: |Ordering number : EN4163 Asynchronous Silicon Gate CM O S LSI LC36256AL, AML-70/85/10/12 No. 4163 S A iIVO 256 K 32768 words x 8 bits SRA M Overview Package Dimensions The LC 36256A L, A M L -70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an
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en4163lc36256alaml-70/85/10/126256a+4dip28lc36256low-levellc36256audg153bb
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500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Contextual Info: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
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150/160-mhz-band500 dkztfk 4 314valvo+7telefunken* u 111 bstr w 6052tfk 1007tfk 014schwingquarz telefunkentfk s 417 tvalvo transistoren
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Contextual Info: Data Sheet Dual, 10-Bit nanoDAC with 2 ppm/°C Reference, SPI Interface AD5313R FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Low drift 2.5 V reference: 2 ppm/°C typical Tiny package: 3 mm x 3 mm, 16-lead LFCSP Total unadjusted error TUE : ±0.1% of FSR maximum
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10-bitad5313r16-leadcp-16-22+1ru-16
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600 DKZ
Contextual Info: Data Sheet Dual, 10-Bit nanoDAC with 2 ppm/°C Reference, SPI Interface AD5313R FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Low drift 2.5 V reference: 2 ppm/°C typical Tiny package: 3 mm x 3 mm, 16-lead LFCSP Total unadjusted error TUE : ±0.1% of FSR maximum
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AMD Athlon 64 X2 4800 pin diagram
Abstract: MAX8774 ME2N7002E 87541 amd SB460 ICS951462 rs485mc TMDTL50HAX4CT PC87541 TC7SZ08FU
Contextual Info: 5 4 3 2 1 ES2 BLOCK DIAGRAM AMD S1 HOST 133/166MHz PCIE 100MHz VGA 96MHz USB 48MHz REF 14MHz D DDRII-SODIMM1 PG 8,9 533/ 667 MHZ DDR II 1 Sempron Rev.F2 Single-Core 1.6G Single-Core 25W Normal, up to 35W 638 S1g1 socket DDRII-SODIMM2 CPU VR CLOCK GENERATOR
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ics951462133/166mhz100mhz96mhz+1448mhz14mhzrs485mc25mhzrtl8101e47p/50v/npoamd athlon 64 x2 4800 pin diagrammax8774me2n7002e87541amd sb460tmdtl50hax4ctpc87541tc7sz08fu
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HYB18T256400AF37
Abstract: 600 DKZ
Contextual Info: . HYB18T256400/800/160AF 256Mb DDR2 SDRAM PRELIMINARY DATASHEET Rev. 0.6 4.03 Features • High Performance: • Write Latency = Read Latency -1 Speed Sorts -5 DDR2 -400 -3.7 DDR2 -533 -3 DDR2 -667 Units Bin (CL-trcd-trp) 3-3-3 4-4-4 4-4-4 tck max. Clock
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HYB18T512400AF5
Abstract: 600 DKZ
Contextual Info: . HYB18T512400/800/160AF 512Mb DDR2 SDRAM PRELIMINARY DATASHEET Rev. 1.05 4.03 Features • High Performance: • Write Latency = Read Latency -1 -5 DDR2 -400 -3.7 DDR2 -533 -3 DDR2 -667 Units 3-3-3 4-4-4 4-4-4 tck max. Clock Frequency 200 266 333 MHz Data Rate
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D17012GF
Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
Contextual Info: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if
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//pd17012gf-011200mhz7tfm18jd17012gf+978mecd17012gf-011d17012gltaftet 4-1-fmbfy40d17012tlu 011upd6121g
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Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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73fo
Abstract: IC KSS 344 tfk 1490 d17012gf MW26 23 tfk 101 cd7y ib7a JCOP lwm 1602 d
Contextual Info: M O S ili* 0 E £ M O S j u F M , M W , L W P D f a - ± 1 7 ^ fc 1 2 In te g ra te d G F - C ir c u it 5 4 F8 ^ , MW, LW ^a. tl/cC M O S LSI T 'fo PLLjI)}j£t& '>>'tz-tKif • T i ' 3 fc to, h P ~ 7 , LCD3> h P - ? / * - •
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upd17012gf-054oam77fm18j73fo+9ic kss 344tfk 1490d17012gfmw2623 tfk 101cd7yib7ajcoplwm 1602 d
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kcd3
Abstract: UPD6121f PD17012GF KT77 7012GF 51I7 KVF1 FC-7 3P ks-49 KTVA
Contextual Info: T — $ • S '— h S M O S * a iilS & M O S In te g ra te d C ircuit j t t P D 1 i f * (M W FM, MW , L W f i - t P L U a * lB ^ 7 <fc * > ' : ] > 1 2 G F - 5 3 m h P - 7 AiP D 1 7 0 1 2 G F -0 5 3 ti^ # ^ f& < 7 P L L JiiÈ S '> > -tri# -< 1 f^ F M > MW, L W* . ! —
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lw31joam77kcd3upd6121f+8pd17012gfkt777012gf51i7kvf1fc-7 3pks-49ktva
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DDR2-400
Abstract: HYB18T512160AC-5 HYB18T512400AC HYB18T512400AC-5 HYB18T512800AC HYB18T512800AC-5 600 DKZ
Contextual Info: D a t a S h e e t , V 1. 0 8 , A u g . 2 0 0 3 HYB18T512400AC HYB18T512800AC HYB18T512160AC 5 1 2 M b i t D D R 2 SD R A M Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-08-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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hyb18t512400achyb18t512800achyb18t512160achyb18t512400/800/160ac+6512mbddr2-400hyb18t512160ac-5hyb18t512400ac-5hyb18t512800ac-5600 dkz
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feme relais
Abstract: Rapa relay 12vdc Rapa Relais gruner RELAY 275 gruner RELAY haller Relays SDS Relais ZETTLER AZ haller relais feme relay
Contextual Info: Relay Coupler 58 Relay Coupler Contact material Properties Application Fine silver AG 99 % - inexpensive - average tendency to weld and average resistance to burn-off - subject to corrosion in sulphurous atmosphere - high mechanical stability - low tendency to weld
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feme relaisrapa relay 12vdcrapa relaisgruner relay 275+6gruner relayhaller relayssds relaiszettler azhaller relaisfeme relay
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HYB18T256160AC-3
Abstract: HYB18T256160AC-5 HYB18T256400AC HYB18T256400AC-3 HYB18T256400AC-5 HYB18T256800AC HYB18T256800AC-5
Contextual Info: D a t a S h e e t , V 1 . 0 , M a r c h 2 0 04 HYB18T256400AC HYB18T256800AC HYB18T256160AC 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-03-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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HYB18T512160AC-5
Abstract: HYB18T512400AC HYB18T512400AC-5 HYB18T512800AC HYB18T512800AC-5
Contextual Info: D a t a S he et , V 1. 1 2 , M a r c h 2 0 04 HYB18T512400AC HYB18T512800AC HYB18T512160AC 512 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-03-24 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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1G DDR2 128 x 8
Abstract: DDR2-400 DDR2-533 DDR2-667 HYB18T256160A HYB18T256160AF HYB18T256400AF HYB18T256800AF ddr infineon hyb vm 256MB DDR 400
Contextual Info: D a t a S he et , V 1. 0 2 , M a y 2 0 04 HYB18T256400AF HYB18T256800AF HYB18T256160AF 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-04-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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Contextual Info: D a t a S h e e t , V 1. 1 1 , D e c . 2 0 0 3 HYB18T512400AC HYB18T512800AC HYB18T512160AC 512 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2003-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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ODT01
Abstract: BA2A13
Contextual Info: D a t a S h e e t , V 0. 9 2 , D e c . 2 0 0 3 HYB18T256400AC HYB18T256800AC HYB18T256160AC 256 Mbit DDR2 SDRAM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2003-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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JMS27656
Abstract: ZD - 98F FFD socapex MIL-PRF-87937 amphenol 900047 DOC-000503-ANG JMS27468 900142 ZD 98F DOC-000030-ANG
Contextual Info: Amphenol LJT / HE 308 MIL-DTL-38999 Series I Subminiature cylindrical connectors www.amphenol-socapex.com - www.38999-solutions.com Amphenol <<< LJT / HE 308 Description Amphenol Socapex is a MIL-DTL-38999 series I standard QPL and HE308 qualified manufacturer. The LJT product
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mil-dtl-3899938999-solutionshe308doc-000031-ang/b+10jms27656zd - 98fffd socapexmil-prf-87937amphenol 900047doc-000503-angjms27468900142zd 98fdoc-000030-ang
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Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps
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spirit1
Abstract: EN-13757 ook deMODULATOR ghz EN-13757-4 ST 9918 EN137574 wireless encrypt RCF up 2201 receiver pll 169mhz sk 8060
Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — preliminary data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps
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spirit1en-13757ook demodulator ghzen-13757-4+6st 9918en137574wireless encryptrcf up 2201receiver pll 169mhzsk 8060
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