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    60 DP Search Results

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    Kyocera AVX Components VC121026H560DP

    - Tape and Reel (Alt: VC121026H560DP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas VC121026H560DP Tape & Reel 6,000 15 Weeks 1,000
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    • 1000 $0.49
    • 10000 $0.44
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    TTI VC121026H560DP Reel 18,000 1,000
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    • 1000 $0.49
    • 10000 $0.49
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    Avnet Abacus VC121026H560DP 15,000 17 Weeks 1,000
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    Avnet Asia VC121026H560DP 15 Weeks 1,000
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    ECS International Inc ECS-3225Q-33-260-DP-TR

    - Tape and Reel (Alt: ECS-3225Q-33-260-DP-TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ECS-3225Q-33-260-DP-TR Tape & Reel 2,000 19 Weeks 1,000
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    • 1000 $0.90
    • 10000 $0.66
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    Newark () ECS-3225Q-33-260-DP-TR Tape & Reel 1,000 100
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    • 100 $1.15
    • 1000 $1.04
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    ECS-3225Q-33-260-DP-TR Cut Tape 1,000 1
    • 1 $1.46
    • 10 $1.46
    • 100 $1.15
    • 1000 $1.04
    • 10000 $1.00
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    Vishay Intertechnologies RNR55E1960DPBSL

    - Bulk (Alt: RNR55E1960DPBSL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNR55E1960DPBSL Bulk 25
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    • 100 $64.80
    • 1000 $63.15
    • 10000 $63.15
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    Vishay Intertechnologies M55342M06B360DPWB

    SMD Chip Resistor, 360 ohm, ? 1%, 150 mW, 0805 [2012 Metric], Thin Film, Established Reliability - Waffle Pack (Alt: M55342M06B360DPWB)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342M06B360DPWB Waffle Pack 7 Weeks 1,000
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    • 1000 $1.26
    • 10000 $1.08
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    Vishay Intertechnologies RNR55E1560DPM7665

    Through Hole Resistor, 156 ohm, HDN RNR Series, 100 mW, ? 0.5%, Axial Leaded, 200 V, Metal Film - Bulk (Alt: RNR55E1560DPM7665)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNR55E1560DPM7665 Bulk 25
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    • 100 $55.28
    • 1000 $53.87
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    60 DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: $OSKDQXPHULFDO SURGXFW OLVW DUW QR SDJH DUW QR SDJH DUW QR SDJH DUW QR ,&. 60' $  ,&. 60' %  ,&. 60' %2;  ,&. 60' &  ,&. 60'  ,&. 60'  ,&. 60' *  ,&. 60' +  ,&. 60' .  ,&. 60' 0  ,.  ,.   ,6  ,6  ,6  ,6  ,6 


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    400HB

    Contextual Info: DPF 60 IM 400HB not released V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns 1 Part number Marking on product 2 DPF 60 IM 400HB 3 Features / Advantages: Applications: Package:


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    400hbo-247ad60747and PDF

    BL57

    Abstract: 57BL 57BLS54 57BLS116 DPM 42 57BLS94 60VDC BL57-12C-54 speed motor encoder DPM 57BLS54
    Contextual Info: BL57 24DC TO 60VDC Brushless Drive Dimensions in mm. Specifications Characteristics MODEL BL57-12C-54 BL57-12C-74 BL57-12C-94 BL57-12C-116 DPM MOTOR 57BLS54 57BLS74 57BLS94 57BLS116 24-60 24-60 24-60 24-60 1 SUPPLY 2 RATED VDC VOLTAGE RPM SPEED 3 RATED 4 DIGITAL


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    60vdcbl57-12c-54bl57-12c-74bl57-12c-94+10bl57-12c-11657bls5457bls7457bls9457bls116bl5757bldpm 42speed motor encoderdpm 57bls54 PDF

    DPF60IM400HB

    Contextual Info: DPF 60 IM 400 HB tentative V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 400 V 60 A 60 ns 3 DPF 60 IM 400 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    o-24760747anddpf60im400hb PDF

    DPF60IM400HB

    Abstract: DPG60I400HA DPG60IM400QB
    Contextual Info: DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    fr60060747and20100216adpf60im400hb+2dpg60i400hadpg60im400qb PDF

    DPG60IM400QB

    Abstract: DPG60I400HA diode 0102 DPF60IM400HB marking HB diode diode marking 355 DPG60I DPG60I4
    Contextual Info: DPF 60 IM 400 HB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    60747anddpg60im400qbdpg60i400hadiode 0102+5dpf60im400hbmarking hb diodediode marking 355dpg60idpg60i4 PDF

    DC-18GHz

    Contextual Info: DPDT 700 Latching | SMA RF Characteristics s DC-18 GHz s Ruggedized s 100K Cycles Specifications Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.15 80 0.15 1-4 1.25 60 0.25 4-8 1.35 60 0.35 8-12.4 1.50 60 0.50 12.4-18 1.50 60 0.50


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    dc-18700c70100coms800as9100/iso-9001+1dc-18ghz PDF

    710C70200

    Contextual Info: 710 Failsafe | SMA DPDT RF Characteristics s DC-18 GHz s Ruggedized s 100K Cycles Specifications Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.15 80 0.15 1-4 1.25 60 0.25 4-8 1.35 60 0.35 8-12.4 1.50 60 0.50 12.4-18 1.50 60 0.50


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    dc-18710c70200as9100/iso-9001coms800 PDF

    CH-3185

    Abstract: 250R 500R 600R
    Contextual Info: Drahtpotentiometer Typ DP 60 Standardausführung Wire-wound potentiometer type DP 60 standard execution Potentiomètre bobiné type DP 60 exécution standard Eigenschaften Characteristics / Caractéristiques Widerstandsbereich 2R0 bis 20K Resistance range / Gamme de résistance


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    ch-3185250r500r600r PDF

    nec 2Sb617

    Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85


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    ida1263idc31802sa12632sc3180+14bdt41bbdt42bbd244bssp82bnec 2sb6172sa1102 sanken2sd371-0sanken 2sa1102lt019181t2bgentron2sa808alt019s2sb617 PDF

    Contextual Info: DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips


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    60747and20100216a PDF

    Contextual Info: Thyristor Selection Guide SELECT GUIDE 15 Metal/Plastic lT AMPS 0.2 @ TC (°C) 25 60 60 60 60 25 25 lTSM (AMPS) 7.5 10 10 10 10 10 10 0.8 * % CASE TO-92 SOT-23 SOT-89 TO-92 SOT-223 VDRM,VRRM (VOLTS) 30 2N5060 BRX44I 60 2N5061 BRX45t 2N5062 BRX46t 100 CMPS5061


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    ot-23ot-89ot-2232n5060+6brx44i2n5061brx45t2n5062brx46tcmps5061 PDF

    Contextual Info: 310 Failsafe | N, TNC, SC DPDT RF Characteristics s DC-6.5 GHz s DC-12.4 GHz s Ruggedized s 100K Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.20 60 0.15 1-4 1.35 60 0.25 4-8 1.45 60 0.35 8-12.4 1.50 60 0.50 Note: RF Characteristics are for type N & TNC Female connectors, consult Dow-Key for other


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    dc-12310c00100as9100/iso-9001coms800 PDF

    Contextual Info: DPDT 300 Latching | N, TNC, SC RF Characteristics s DC-6.5 GHz s DC-12.4 GHz s Ruggedized s 100K Cycles Frequency GHz VSWR max Isolation dB (min) Ins. Loss dB (max) DC-1 1.20 60 0.15 1-4 1.35 60 0.25 4-8 1.45 60 0.35 8-12 1.50 60 0.50 Note: Performance applies to N and TNC type connectors. Consult with factory for other


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    dc-12300c00100coms800as9100/iso-9001 PDF

    Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •


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    sir662dp2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •


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    sir662dpsir662dp-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •


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    sir662dpsir662dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiR688DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 0.0035 at VGS = 10 V 60 0.0045 at VGS = 6 V 60 0.0060 at VGS = 4.5 V 60 60 Qg (Typ.) 20.5 nC PowerPAK SO-8 S 6.15 mm S 3 D • Synchronous Rectifier


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    sir688dpsir688dp-t1electronic2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    DPG60IM400QB

    Abstract: DPF60IM400HB DPG60I400HA dpg 60 im 400 qb DPF60I
    Contextual Info: DPG 60 IM 400 QB V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 IM 400 QB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    60747and20100128adpg60im400qbdpf60im400hb+3dpg60i400hadpg 60 im 400 qbdpf60i PDF

    D2PAK package

    Abstract: DPG60IM300PC
    Contextual Info: DPG 60 IM 300 PC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 IM 300 PC 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    60747and20100205ad2pak packagedpg60im300pc PDF

    STP10P6F6

    Abstract: STD10P6F6 10P6F6 1040 TO-252
    Contextual Info: STD10P6F6, STP10P6F6 P-channel 60 V, 0.15 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages Datasheet — preliminary data Features Order codes VDSS RDS on max ID STD10P6F6 60 V 0.18 Ω 10 A STP10P6F6 60 V 0.18 Ω 10 A •


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    std10p6f6stp10p6f6o-220am11258v1+210p6f61040 to-252 PDF

    400QB

    Contextual Info: DPG 60 IM 400QB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns 1 Part number Marking on product 2 DPG 60 IM 400QB 3 Features / Advantages: Applications: Package: ● Planar passivated chips


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    400qb60747and PDF

    DPG60IM400QB

    Abstract: DPG60I400HA
    Contextual Info: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    60747and20100128adpg60im400qbdpg60i400ha PDF

    dpg60i300

    Abstract: DPG60IM300PC
    Contextual Info: DPG 60 I 300 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 I 300 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


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    60747and20100129bdpg60i300dpg60im300pc PDF