6 GHZ AMPLIFIER 20W Search Results

PCB Rogers RO4003

Abstract: 42 dbm 2.4GHz amplifier schematic RO4003 TGA2924-EPU-SD Rogers RO4003 substrate 6 ghz amplifier 20w
Contextual Info: Advance Product Information March 23, 2004 10 Watt MMDS Packaged Amplifier TGA2924-EPU-SD Key Features • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat Internally Partially Matched IMD3 -45 dBc @ 28 dBm SCL, Typical

6 ghz amplifier 10w

Contextual Info: Advance Product Information October 31, 2008 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

PCB Rogers RO4003 substrate datasheet

Abstract: 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 TGA2924-SG MIL-C-2 Rogers RO4003 substrate
Contextual Info: Advance Product Information Aug 16, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: Advance Product Information July 29, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: Advance Product Information January 12, 2005 10 Watt MMDS Packaged Amplifier TGA2924-EPU-SD Key Features • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat Internally Partially Matched IMD3 -45 dBc @ 28 dBm SCL, Typical

Contextual Info: Advance Product Information Feb 15, 2008 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: Advance Product Information Feb 12, 2007 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: Advance Product Information April 27, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SD/SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

PCB Rogers RO4003 substrate

Abstract: PCB Rogers RO4003 RO4003 TGA2924-SG PCB Rogers RO4003 substrate datasheet
Contextual Info: TGA2924-SG 10 Watt MMDS Packaged Amplifier Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched IMD3 -45 dBc @ 28 dBm SCL, Typical

MGA-445343-99

Abstract: MMA445133-02 6 ghz amplifier 20w
Contextual Info: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power

MMA445133-02

Contextual Info: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power

Contextual Info: 47 dB Gain, 20 Watt, 3.1 GHz to 3.5 GHz, High Power High Gain Amplifier, 3.5 dB NF, SMA TECHNICAL DATA SHEET PE15A5003 PE15A5003 is a 20W S-band high gain, high power coaxial amplifier operating in the 3.1 to 3.5 GHz frequency range. The amplifier offers 42 dBm minimum of saturated output power and high 47 dB typical small signal gain with the gain flatness of

Contextual Info: TGA2579-2-FL 20W Ku-Band GaN Power Amplifier Applications • Ku-band Communications Product Features        Functional Block Diagram Frequency Range: 14.0 – 15.35 GHz PSAT : 43 dBm PAE: 27% Small Signal Gain: 35 dB Integrated Voltage Detector

Contextual Info: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process

MAAP-000079-SMB001

Abstract: AN3016 AN3019 MAAP-000079-PKG001 MAAP-000079-SMB004 MAAPGM0079-DIE 6 ghz amplifier 20w
Contextual Info: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process

MAAP-000079-SMB001

Abstract: AN3016 AN3019 MAAP-000079-PKG001 MAAP-000079-SMB004 MAAPGM0079-DIE
Contextual Info: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process

NPT25100

Abstract: matlab using ofdm using peak to average power amplifier diagram 6 ghz amplifier 20w ofdm using peak to average power using matlab an-005 nitronex main amplifier GaN PA inverter using two parallel transformer Doherty amp
Contextual Info: Application Note AN-005 2.5-2.7GHz 20W Doherty Amplifier for WiMAX Applications Using the NPT25100 Introduction Doherty Theory of Operation This application note describes the operational theory and characterization of a Doherty amplifier reference circuit that incorporates two Nitronex NPT25100 GaN

FUJITSU MICROWAVE TRANSISTOR

Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
Contextual Info: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band

MAAP-000079-PKG001

Abstract: 6 ghz amplifier 20w MAAP-000079-SMB001 MAAP-000079-SMB004 MAAPGM0079-DIE M567 PACKAGE DIMENSIONS CASE 751-05
Contextual Info: RoHS Compliant Amplifier, Power, 20W 7.5-10.5 GHz MAAP-000079-PKG001 Rev — Advance Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
Contextual Info: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Contextual Info: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and

2200 microfarad 16v capacitor

Abstract: capacitor, 22 microfarad 50v 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 47UF PFM21020 capacitor, 2200 microfarad 16v 6 ghz amplifier 20w
Contextual Info: PFM21020 SPECIFICATION 2.11-2.17 GHz, 20W, Two-Stage Power Module Enhancement-Mode Lateral MOSFETs This UMTS module has been designed to serve as a driver amplifier in either the output or the error path of a multi-channel amplifier. The transistors are Si LDMOS devices biased in Class AB operation, in order to

Contextual Info: RF-LAMBDA RAMP07G06GD The power beyond expectations 20W Ultra Wide Band AC – Power Amplifier0.7GHz~6GHz Feature Gain: 35dB Typical Output power +43dBm Typical High P1dB: +41 dB m Full Band 50 Ohm Matched Input / Output Size: 13.23” x 8.27” x3.54”

NCP1204

Abstract: bipolar power transistor data NCP4000 SO32W NCP1450 dual zener common anode NCP801 DC-DC Step-Up Converter for White LED TSOP RECEIVER MOSFET P-CH 250V 5A
Contextual Info: Rev. 9, 2Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers Device CS5323 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. Gate Drive External On-chip Compliance VRM 9.0 VRM 9.0 Package SO-20W SO-28W Availability NOW May-02