5V GATE TO SOURCE VOLTAGE SFET Search Results

AN7254

Abstract: AN9321 AN-7260
Contextual Info: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/1QA, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power M O SFET Th e se complementary power M O S F E T s are manufactured using an advanced M e g aFET process. Th is process, which u ses feature size s approaching those of L S I integrated

Contextual Info: HUF76444P3, HUF76444S3S Semiconductor December 1998 Advance Inform ation 60V, 0.010 Ohm, 75A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power M O SFETs are manufactured using the innova­ File Number 4675 Features Ultra Low On-Resistance, rQS ON = 0.009S2, VGS= 1 0 \/

Contextual Info: HUF76444P3, HUF76444S3S December 1998 Advance Information 60V, 0.010 Ohm, 75A, N-Channel, Logic Level UltraFET Power MOSFETs Features Ultra Low On-Resistance, rQS ON = 0.009£2, VGS= 1 0 l/ r DS(ON) = 0.01 O a V g s = 5 ^ These N-Channel power M O SFETs are manufactured using the innova­

d1106

Abstract: LD1116 LD 1106
Contextual Info: E> A dvanced L in e a r ALD1106/ALD1116 D e v ic e s , In c . QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The A LD 1106/A LD 1116 are m onolithic quad/dual N-channel enhance­ m entm ode m atched M O SFET transistor arrays intended fo r a broad range

Contextual Info: MIC5010 Full-Featured High- or Low-Side MOSFET Driver General D escription Features The MIC5010 is the full-featured member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power M O SFET above the supply rail in high-side power switch applications. The MIC5010 is

Contextual Info: MIC5020 Current-Sensing Low-Side MOSFET Driver Preliminary Information General Description Features The M IC5020 low-side M O SFET driver is designed to oper­ ate at frequencies greater than 100kHz and is an ideal choice for high-speed applications such as m otor control, SMPS

VA22

Abstract: Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761
Contextual Info: H U F76113D K 8 in t e r d i Data Sheet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET # 4 3 8 7 .4 Features • Logic Level Gate Drive This N-Channel power M O SFET is w F ile N u m b e r manufactured using the innovative

Contextual Info: in te r r ii HUF76132SK8 D a ta s h e e t S e p te m b e r 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power M O SFET This N-Channel power M O S F E T is manufactured using the innovative UltraFET process. This advanced process technology achieves the

5210s

Abstract: MOSFET smd marking kl 1ER2 AN-994 IRL510 IRL510S SMD-220 arej
Contextual Info: International ü ë ]Rectifier PD-9.560C IRL510 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: General Description Features The M IC5014/5015 M O SFET predrivers are m em bers of the MIC501x family. These versatile drivers are designed to provide gate enhancem ent above the positive supply for an Nchannel FET used in high or low side switching applications.

AMPLIFIER wifi

Abstract: Capacitor 47nS namics UCC1837
Contextual Info: y UCC1837 UCC2837 UCC3837 UNITRODE 8-Pin N-FET Linear Regulator Controller PRELIMINARY FEATURES DESCRIPTIO N • On Board Charge Pump to Drive External N -M O SFET • Input Voltage as Low as 3V • Duty Ratio Mode Over Current Protection • Extremely Low Dropout

BUZ71A

Abstract: 0120S
Contextual Info: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2

Contextual Info: Application Note 1 ETC ;A mu MIC5011 Design Techniques n | |g | g * | by Mitchell Lee Introduction Power M OSFETs are often preferred over bipolar tran­ sistors as high current switches. In static switching ap­ plications the M O SFET takes no drive power, where a

gs 1117 ax

Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Contextual Info: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range

KEc 161

Contextual Info: S EM IC O N D U C T O R KMB7D6NP30Q TECHNI CAL DATA N and P-Ch T rench M O SFET G en era l D escrip tion Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems.

Si9959

Abstract: SI9910 AN90 siliconix
Contextual Info: SA Member S ioflthei cT o nGroupi x AN90-5 emic Low-Voltage Motor Drive Designs Using N-Channel Dual MOSFETs in Surface-Mount Packages Jim H am den Two basic M O SFET configurations are used in low-voltage m otor drives — the n-channel half-bridge and the p- and n-channel com plem entary half-bridge. T he

d22a

Abstract: D-22A KMD4D5P30XA R/Diode d22a
Contextual Info: S EM IC O N D U C T O R KMD4D5P30XA TECHNI CAL DATA P-CH T rench M O SFET G en era l D escrip tion This Trench MOSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e

J 115 mosfet

Abstract: ECG2376 5V GATE TO SOURCE VOLTAGE MOSFET ecg mosfet ECG2986 ECG2984 ECG2981
Contextual Info: Power M O SFETS cont'd EC6 Type ECG2920 ▲ ECG2375 A ECG2376 ▲ ECG2921 ▲ ECG2922 ▲ ECG2923 ▲ ECG2924 ▲ Description and Application Transcon­ ductance gfs gmhos M O S FET, 25 M in N-Ch, Enh ancem ent Hi Speed S w itch Drain to Sou ice Breakdown

DIODE s4 66A

Contextual Info: j * 4 A5 S4 S2 0015508 B IT M I N R @*§3 Rectifier HEXFET P ow er M O SFET • • • • • • PD-9.456C IR F P 3 4 0 IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

Contextual Info: PD-91849D International IOR Rectifier IRF7233 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -12V RüS on = 0.020Q, Description These P-Channel MOSFETs from International Rectifier

1X04

Abstract: TRANSISTOR MOSFET K 1249 IRFI064
Contextual Info: Data Sheet No. PD-9.876 INTERNATIONAL RECTIFIER TOR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFIQ64 a] N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power M O SFET transistors.

OM6413SP3

Abstract: OM6414SP3 OM6415SP3 OM6416SP3 OM6414
Contextual Info: OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3 THREE PHASE MOSFET HALF BRIDGE IN A PLASTIC SIP PACKAGE 100V Thru 500V, Up to 6 Amp, Three Phase M O SFET Half Bridge FEATURES • • • • • • Isolated High Density, Low Profile Package 6 M O S F E T s Per Package

floating-gate

Abstract: DEB141
Contextual Info: Order this document by EB141/D MOTOROLA SEMICONDUCTOR ENGINEERING BULLETIN EB141 Boost M O SFETs Drive Current in Solid State A C Relay By Kim Gauen Senior Applications Engineer, Discrete Applications Lab Because M O SF E T s are voltage controlled, they're usu­

50n05

Abstract: LD55A
Contextual Info: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POW ER M O SFETS IN H ERM ETIC ISO LATED PACKAGE 50V A n d 60V Ultra L o w R DS(0nl Pow er MOS FETs In TO-257 A nd TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages