5SLD Search Results

5SLD0650J450300

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 PRELIMINARY Doc. No. 5SYA 1599-00 Nov 07 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-01 May 08 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5SLD0650J450300

Abstract: Abb diode ABB Switzerland
Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-02 Jan 09 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5SLD 1200J330100

Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode • Smooth switching SPT diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

schematic diagram UPS

Abstract: BUZ72A
Contextual Info: rZ 7 SGS-THOMSON BUZ72A 5SlD g[BÏ I!L[l(ginsl©lfflD(gl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ72A 100 V 0.25 fi 'd 9 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦

Contextual Info: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 • Low-loss, rugged SPT diode  Smooth switching SPT diode for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling

5SLD1000N330300

Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-02 04-2012 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

A7910

Contextual Info: TDB7910 TDA7910 F Z 7 SG S-1H 0M S0N * 7 #» 5SlD g[S IILi(gTO [(!!IO(gi MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER . • . . . OUTPUT CURRENT UP TO 500 mA OFFSET VOLTAGE NULL CAPABILITY SHORT-CIRCUrT PROTECTION THERMAL OVERLOAD PROTECTION PLASTIC PACKAGE FOR EASY ASSEMBLY

S 437 Diode

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 ABB HiPakTM DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Abb diode

Abstract: 5SLD A 2039 g IGBT abb datasheets 141200
Contextual Info: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-00 Aug. 10 • Low-loss, rugged SPT diode • Smooth switching SPT diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5SLD 1200J450350

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPak DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-04 06-2014 •     Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling

iec 61287

Abstract: 1200J450350 5SLD1200J450350
Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode  Smooth switching SPT diode for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-00 07-2011 5SLD 1000N330300 ABB HiPakTM DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SLD 0650J450300

Abstract: 5SLD0650J450300
Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-03 Apr 12 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5SLD 1000N330300

Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: LM H6601 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Texa s In s t r u m e n t s Literature Number: SNOSAK9D t - . * O cto b e r20 Q w Semiconductor LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Am plifier with Shutdown Features

CHN 535

Contextual Info: Single Output UNR Series Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N ew lo w -vo ltag e m ic ro p ro c e s s o r a nd m e m o ry ch ip s are d rivin g th e m ig ra tio n from ce n tra lize d to d istrib u te d p o w e r p ro ce ssin g in m od e rn te le c o m m u n ic a tio n and

ana 608

Abstract: Q41997 CSA950 D12A D48A
Contextual Info: 5DATEL INNOVATION and EXCELLENCE Single Output A -S eries , UW R M odels a High-Reliability, 2" x 1" 6-10 Watt, DC/DC Converters œ w A-SERIES Features • Placing reliability and cost considerations above all others, DATEL’s new A ­ Series DC/DC Converters com bine straightforward circuit topologies, the newest

TDA2540-TDA2541

Contextual Info: TDA2540 TDA2541 SGS-THOMSON IF AMPLIFIER WITH DEMODULATOR AND AFC • SUPPLY VOLTAGE :1 2 V TYP ■ SUPPLY CURRENT : 50 mA TYP ■ I.F. INPUT VOLTAGE SENSITIVITY AT F = 38.9 MHz : 85 ì Vrms TYP ■ VIDEO OUTPUT VOLTAGE (white at 10 % of top synchro : 2.7 Vpp TYP