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    5N160 Price and Stock

    Hammond Manufacturing

    Hammond Manufacturing 1455N1601BK

    black extruded aluminum enclosure with metal end panels
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    Master Electronics 1455N1601BK 21
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    Hammond Manufacturing 1455N1602BK

    black extruded aluminum enclosure with plastic end panels
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    Master Electronics 1455N1602BK 20
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    Powell Electronics 1455N1602BK 65 1
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    Hammond Manufacturing 1455N1601

    extruded aluminum enclosure with metal end panels
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    Master Electronics 1455N1601 18
    • 1 $34.12
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    TME 1455N1601 60 1
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    Powell Electronics 1455N1601 348 1
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    Neutron USA 1455N1601 50
    • 1 $74.99
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    Hammond Manufacturing 1455N1601BU

    blue extruded aluminum enclosure with metal end panels
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    Master Electronics 1455N1601BU
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    Newark () 1455N1601BU Bulk 80 1
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    TME 1455N1601BU 1
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    Powell Electronics 1455N1601BU 39 1
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    Neutron USA 1455N1601BU 50
    • 1 $79.99
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    Hammond Manufacturing 1455N1602

    extruded aluminum enclosure with plastic end panels
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    Master Electronics 1455N1602
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    Newark () 1455N1602 Bulk 22 1
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    1455N1602 Bulk 6 1
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    RS 1455N1602 Bulk 1
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    TME 1455N1602 25 1
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    Powell Electronics 1455N1602 164 1
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    Neutron USA 1455N1602 50
    • 1 $64.99
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    5N160 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5N160

    Abstract: IXBP5N160G BiMOSFET
    Contextual Info: Advanced Technical Information IC25 VCES VCE sat tf High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor = 5.7 A = 1400/1600 V = 4.9 V = 70 ns TO-220 AB IXBP 5N140 G IXBP 5N160 G C G G C E C (TAB) TO-247 AD IXBH 5N140 G IXBH 5N160 G E G C E C (TAB) A = Anode, C = Cathode , TAB = Cathode


    Original     		o-2205n1405n160o-247+2ixbp5n160gbimosfet PDF

    D-68623

    Abstract: 2146 to-220
    Contextual Info: IXBP 5N160 G IXBH 5N160 G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor C Preliminary data sheet IC25 VCES VCE sat tf = 5.7 A = 1600 V = 4.9 V = 70 ns TO-220 AB (IXBP) G C C (TAB) E G TO-247 AD (IXBH) E G C E C (TAB) A = Anode, C = Cathode , TAB = Cathode


    Original     		5n160o-220o-247d-68623+12146 to-220 PDF

    Contextual Info: Advanced Technical Information IXBP 5N140 G IC25 IXBP 5N160 G VCES High Voltage BIMOSFETTM VCE sat tf = 5.7 A = 1400/1600 V = 4.9V = 70 ns Monolithic Bipolar MOS Transistor C G C E G E Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings IXBP 5N140


    Original     		5n1405n160o-220 PDF

    5n160g

    Abstract: IXBP 5N160 G D-68623 transistor 2146
    Contextual Info: Advanced Technical Information IXBP 5N160 G IXBH 5N160 G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor C IC25 VCES VCE sat tf = 5.7 A = 1600 V = 4.9 V = 70 ns TO-220 AB G C E C (TAB) G TO-247 AD E G C E C (TAB) A = Anode, C = Cathode , TAB = Cathode


    Original     		5n160o-220o-2475n160g+3ixbp 5n160 gd-68623transistor 2146 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF