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    5M DIODE Search Results

    5M DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    5M DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IN751a

    Abstract: IN753a in752a in750A IN759A IN749A in758a IN755A IN757A IN756a
    Contextual Info: Diodes and Rectifiers C ase Drawing No. mW Max. Pow er D issipa tion at 25°C (Volts) Norn. V oltage ±5% at 5m A (O ) Max. S lo p e Imp. at 5m A (%/"C) Typ. Temp. Coef. at 5m A 1S2030A S07 BB 400 30 200 -0 0 7 1S2033A S07 BB 400 3-3 120 -0 0 7 1S2036A


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    1S2030A 1S2033A 1S2036A 1S2039A 1S2043A 1S2047A 1S2051A 1S2056A 1S2062A 1S2068A IN751a IN753a in752a in750A IN759A IN749A in758a IN755A IN757A IN756a PDF

    AMY-5M-0003

    Abstract: AMY-5M-0 u-blox gps 2010 AMY-5 UBLOX UBX G6 DR NMEA - 0183 protocol GPS u-blox reference usb AMY-5M u-blox5
    Contextual Info: locate, communicate, accelerate AMY-5M u-blox 5 ROM-Based GPS Module Data Sheet Abstract Technical data sheet describing the high performance u-blox 5 based AMY-5M GPS receiver module. The AMY-5M module features the industry’s smallest form factor and is a fully tested standalone solution that requires no host


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    G5-MS5-08196-A2 AMY-5M-0003 AMY-5M-0 u-blox gps 2010 AMY-5 UBLOX UBX G6 DR NMEA - 0183 protocol GPS u-blox reference usb AMY-5M u-blox5 PDF

    Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


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    FDMC8554 PDF

    diode a63

    Abstract: ERA22 T460 T930 marking code YK Q03I 40114
    Contextual Info: ERA22 o .5A : O utline D raw in g s FAST RECOVERY DIODE • t t * : Features • m ' m , 5m m t r ? * a » » A s m ■ IR Ultra smalt package. tjs : M arkin g Possible fo r 5m m pitch autom atic insertion A7 - -3 - K Color code • Green High voltage by mesa design.


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    ERA22 19S24^ 095t/R89 diode a63 T460 T930 marking code YK Q03I 40114 PDF

    Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


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    FDMC8554 PDF

    1SV52

    Abstract: PN Junction Diode varactor GaAs varactor diode pn junction diode structure barrier varactor ND3101-5M noise diode power varactor varactor nec nec epitaxial varactor
    Contextual Info: N E C/ CALIFORNIA 1SE D NEC b427M14 OOOnGM 2 G aA s VARACTO R DIO DE ND3101-5M FEATURES DESCRIPTION AND APPLICATIONS • H IG H C U T O F F F R E Q U E N C Y The ND3101-5M Is a GaAs epitaxial Schottky barrier varactor diode especially designed for low noise parametric amplifiers.


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    b427M14 GD011GM ND3101-5M ND3101-5M 1SV52) 1SV52 PN Junction Diode varactor GaAs varactor diode pn junction diode structure barrier varactor noise diode power varactor varactor nec nec epitaxial varactor PDF

    Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features tm General Description ̈ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low


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    FDMC8554 FDMC8554 PDF

    FDMC8554

    Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features tm General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low


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    FDMC8554 FDMC8554 PDF

    96x96mm

    Contextual Info: • 7 A 2 A cm DDOfims 7Tfl ■ R H M K /L ig h t Emitting Diodes LU-2560 5M /5V/5M V L U -2 5 6 0 5 M 16X16 K-yhvMJi'aGaPSBKiH'i-K L U -2 5 6 0 5 V 16X16 Dot MatrixDisplays L U -2 5 6 0 5 M V • W ß ^ ä H /D im e n s io n s Unit : mm LU-2560 v >J - X l i y )l> 7


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    LU-2560 16X16 U-2560 LU-2560series 96x96mm PDF

    5m diode

    Contextual Info: US 5A . US 5M /4 Surface mount diode Ultrafast silicon rectifier diodes US 5A . US 5M Forward Current: 5 A Reverse Voltage: 50 to 1000 V Features                    !"#$ Mechanical Data       % & ' $ "*+


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    PDF

    Contextual Info: US 5A . US 5M /4 Surface mount diode Ultrafast silicon rectifier diodes US 5A . US 5M Forward Current: 5 A Reverse Voltage: 50 to 1000 V Features                    !"#$ Mechanical Data       % & ' $ "*+


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    Contextual Info: R15KP64C Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage79 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage64 I(PPM) Max.(A)Pk.Pulse Current130


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    R15KP64C Voltage79 Voltage64 Current130 Voltage115 PDF

    Contextual Info: R15KP51 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage63 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage51 I(PPM) Max.(A)Pk.Pulse Current164


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    R15KP51 Voltage63 Voltage51 Current164 Voltage91 PDF

    Contextual Info: 15KP36C Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44.5 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage36 I(PPM) Max.(A)Pk.Pulse Current227


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    15KP36C Voltage44 Voltage36 Current227 Voltage66 PDF

    Contextual Info: 15KP60A Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage70.2 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage60 I(PPM) Max.(A)Pk.Pulse Current154


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    15KP60A Voltage70 Voltage60 Current154 Voltage97 PDF

    Contextual Info: R15KP75 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage92.7 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current111


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    R15KP75 Voltage92 Voltage75 Current111 Voltage135 PDF

    Contextual Info: R15KP64CA Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage74.9 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage64 I(PPM) Max.(A)Pk.Pulse Current144


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    R15KP64CA Voltage74 Voltage64 Current144 Voltage104 PDF

    Contextual Info: 15KP120 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage148 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage120 I(PPM) Max.(A)Pk.Pulse Current70


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    15KP120 Voltage148 Voltage120 Current70 Voltage214 PDF

    Contextual Info: R15KP60C Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage74.1 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage60 I(PPM) Max.(A)Pk.Pulse Current140


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    R15KP60C Voltage74 Voltage60 Current140 Voltage107 PDF

    Contextual Info: R15KP36CA Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage42.1 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage36 I(PPM) Max.(A)Pk.Pulse Current251


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    R15KP36CA Voltage42 Voltage36 Current251 Voltage59 PDF

    Contextual Info: R15KP60A Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage70.2 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage60 I(PPM) Max.(A)Pk.Pulse Current154


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    R15KP60A Voltage70 Voltage60 Current154 Voltage97 PDF

    Contextual Info: 15KP36 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44.5 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage36 I(PPM) Max.(A)Pk.Pulse Current227


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    15KP36 Voltage44 Voltage36 Current227 Voltage66 PDF

    Contextual Info: 5KP10C Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage12.4 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage10 I(PPM) Max.(A)Pk.Pulse Current266


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    5KP10C Voltage12 Voltage10 Current266 Voltage18 PDF

    Contextual Info: 5KP43 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage53.1 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage43 I(PPM) Max.(A)Pk.Pulse Current65


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    5KP43 Voltage53 Voltage43 Current65 Voltage76 PDF