VOLTAGE120 Search Results

Contextual Info: SKBB40C3701/2201 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.7 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage120 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.115 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: PH1270-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: V120ZT05 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current400 V(C) Nom. (V) Clamping Voltage205 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy3.0

Contextual Info: V120MT1A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage72 V(DC) Max. Applied Voltage97 I(TM) Max.(A) Peak Current100 V(C) Nom. (V) Clamping Voltage220 @I(PP) (A) (Test Condition)2.0 W(TM) Max.(J) Transient Energy400m

Contextual Info: TNR9G121KM Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current1.0k V(C) Nom. (V) Clamping Voltage195 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy5.0

Contextual Info: OA679-100 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage120 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80 V(FM) Max.(V) Forward Voltage1.15 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)25õ

Contextual Info: TNR12G121KM Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current2k V(C) Nom. (V) Clamping Voltage195 @I(PP) (A) (Test Condition)25 W(TM) Max.(J) Transient Energy12

Contextual Info: Z21L151 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage150 V(RMS) Max. Applied Voltage90 V(DC) Max. Applied Voltage120 I(TM) Max.(A) Peak Current2.0k V(C) Nom. (V) Clamping Voltage @I(PP) (A) (Test Condition) W(TM) Max.(J) Transient Energy15

Contextual Info: SK3443 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.2m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200m V(FM) Max.(V) Forward Voltage120 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: PL0170-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W).35 Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: SVC121D05A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current V(C) Nom. (V) Clamping Voltage210 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy2.8

Contextual Info: 2ASPD120 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage120k I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage200 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: PL0172-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: V120ZU4 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current2.5k V(C) Nom. (V) Clamping Voltage200 @I(PP) (A) (Test Condition)25 W(TM) Max.(J) Transient Energy12

Contextual Info: 1N5180 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current4.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage120 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)4.0 @Temp. (øC) (Test Condition)25’

Contextual Info: PH1272-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: V120CH8 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current500 V(C) Nom. (V) Clamping Voltage200 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy6.0

Contextual Info: VAT17N18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.30pì C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min.450 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor Material Package StylePill-B Mounting StyleS

Contextual Info: D4873-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)3.0 Semiconductor MaterialSilicon Package StyleFuse

Contextual Info: H2752 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current220m @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage120k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage240 @I(FM) (A) (Test Condition)50m @Temp. (øC) (Test Condition)25’

Contextual Info: 1N5951C Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage120 @I(Z) (A) (Test Condition)3.1m Tolerance (%)2 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.380 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41

Contextual Info: 1N5273 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage120 @I(Z) (A) (Test Condition)1.0m Tolerance (%)20 P(D) Max. (W)500m¥ Z(z) Max. (ê) Dyn. Imped.900 Temp Coef pp/10k11 Maximum Operating Temp (øC)200õ

Contextual Info: D4674-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.6.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: D4673-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C