5E8 Search Results

Contextual Info: A88 5E88( /.3-+60!9A/<0$?:6C #?G03?ECD930%?9C50C,0C9J5 BF F 8/B>01/8/<+>3980:9A/<0=96?>398 %&#$010 !% $0 L0#?G03?ECD930>?9C50E94 L0%BBC8C0EB40549D9?>01@@B?F54 L0#5CC0D81>0EBBQ0<51;17503EBB5>D L0CBN0?@D9?>01F19<12<5 L0FBBB-09C?<1D9?>

Contextual Info: J iA T s J Product Specification Sheet Microelectronics Initial Use 1042BG 5ESS/5E8 Quad Z-Line Controller Description 60 44 10 26 The 1042BG Quad Z-Line Controller, Version 3 QZLC3 is used on the Z-interface pack of the ISLU2 to control four Z-line interface circuits. The QZLC3 interfaces between a 4 Mbits/s

Contextual Info: C88 5E88( 35%/7:0!9@/;0$>:6B ,<DB18897805669395>3I0C,0C9J5 BF F !&010!*0! (# 8/A=01/8/;+=3980:9@/;0<96>=398 %&#$010 !% $0 %2/0 0 0+736B0 900 23120 =/7:/;+=>;/0 :9@/;0 <>:63/<0 :;9?3./<0 >:0 =90 E88(0 380 +8 / /

Contextual Info: A88 5E88) %74874900":A0<0%?;7C ,C5B0?>697EB12<50C,0C9J5 BF F "'010"+0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%010!"&! %0 & , =

Contextual Info: Data Sheet 0651A CRYSTAL OSCILLATORS Rev. M OL-X8KXXXXX-R Extremely Low Power Consumption, Fast Warm-up, SC-cut, Precision, Very Low Phase Noise OCXO in DIP14 Compatible Through Hole Package Features • • • • SC-cut crystal Extremely Low Power Consumption 125 mW

Contextual Info: CMX7031/CMX7041 CML Microcircuits The Two-Way Radio Processor COMMUNICATION SEMICONDUCTORS DATASHEET D/7031/41_FI1.x/12 November 2011 Provisional Issue 7031/7041 FI-1.5: Baseband Audio and Data Processor with Auxiliary System Clocks, ADCs and DACs for use in Analogue Radio Systems

Sony IMX 183

Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
Contextual Info: i.MX 6Solo/6DualLite Applications Processor Reference Manual Document Number: IMX6SDLRM Rev. 1, 04/2013 i.MX 6Solo/6DualLite Applications Processor Reference Manual, Rev. 1, 04/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1

LPRO

Abstract: GR-63-CORE rubidium lpro telcordia GR-63-CORE EN50082-1 EN55022B efratom
Contextual Info: Low Profile Rubidium Oscillator 48-Hour Holdover for Mission Critical Applications ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ The LPRO is designed for ease of integration into time and frequency systems because of its low profile and single circuit board design. The height and footprint are designed to

434H

Abstract: 634h 312H 633h A03h dc-dc 427h 1E5H 613H 413h EM65168
Contextual Info: Elan Microelectronics Crop. EM65168 80 COM/SEG LCD DRIVER December 23,2002 Version 0.1 Preliminary Version 0.1 EM65168 Specification Revision History Content Initial version Date December 23, 2002 EM65168 LCD DRIVER Contents 1. GENERAL DESCRIPTION . 4

R5F61653RN50FPV

Abstract: Nippon capacitors ir receiver module sj 1838 P012 World transistors R5F61653RFPV R5F61654RFPV IFR 2945 SERVICE MANUAL sc 1287
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DIODE marking CK 6CA

Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: Data Sheet 0846B CRYSTAL OSCILLATORS Rev. B OG-X8PXXXXX-X Extremely Low Power Consumption, Fast Warm-up, SC-cut, Precision, Very Low Phase Noise OCXO in 1”x1” Hermetically sealed Through Hole Package Features • • • • SC-cut crystal Extremely Low Power Consumption 125 mW

20logN

Contextual Info: OVEN-CONTROLLED CRYSTAL OSCILLATORS Data Sheet 0837A Rev D O-CEM-XXYZXX-X-X-XX-X Precision Ultra Low Phase Noise OCXO in 36x27 mm “Europack” Product Data Sheet Description O-CE…Series is based on Ultra Low Noise 10 MHz reference OCXO and low noise analog

Contextual Info: CRYSTAL OSCILLATORS OC-X87XXXXX-X Series Micro-miniature OCXO Data Sheet 0635A Rev. H Features • • • • • • • • • • • • Low Cost DIL 14 package High Vacuum Sealed Crystal Low Power Consumption 500 mW Fast Warm-up Time (2 minutes) Stratum3 or better Stability

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

ocxo spec

Abstract: Oscillator 8660 8660 Oscilloquartz oscilloquartz ocxo OCXO 10 MHZ oscilloquartz 4.096 Oscilloquartz SA Oscilloq
Contextual Info: OCXO OCXO 8660/8661 Oven Controlled 8660 / 8661 Crystal Oscillator Product Description minimum frequency deviation few parts in 10-9 regardless of the ambient temperature range. The modular design offers the flexibility to accomodate 3rd overtone crystal resonator to

LHF12F16

Abstract: wp 146 LH28F128BFHT-PTTL75A
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

5962-96B02

Abstract: fpga radiation 80C31 "UNITED TECHNOLOGIES MICROELECTRONICS"
Contextual Info: Semicustom Products UTE/UTE-R Gate Array Family Data Sheet May 1996 FEATURES Up to 125,000 usable equivalent gates QML Q and V compliant Designed specifically for high reliability applications Advanced sub-micron 0.9 leff silicon gate CMOS process JTAG (IEEE 1149.1) boundary-scan registers built into I/O

R5F61668RFPV

Abstract: R5F61664RFPV R5F61668RN50FPV R5F61663RFPV A18E A1719 transistor NEC D 587 lsi tms 1951 nl 1117 3.3 DKC mark
Contextual Info: REJ09B0412-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 H8SX/1668R Group, H8SX/1668M Group

chn 731

Abstract: marking AMs 4 pin pin datasheet of chn 743 A18E chn 542 CHN 623 Diodes CHN 703 LG 631 IC GSM antenna 742 267 8 channel audio amplifier circuit diagram
Contextual Info: REJ09B0414-0100 32 H8SX/1622 Group Hardware Manual Renesas 32-Bit CISC Microcomputer H8SX Family / H8SX/1600 Series H8SX/1622 R5F61622 All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read