klg relay
Contextual Info: <:9./ ?=@=5EFC9 <=;< BAH9C >5E7<=@; C9>5I :MJYZWMX ^ +9L;@AF? J=D9Q ^ kljw KOAL;@AF? ;9H9:ADALQ 9L 1=KhDG9< ^ w;GJ<AF? LG L@= >9MDL ;MJJ=FL 9F< =D=;LJA;9D DA>= L=KL G> *{y pljoogmkt 4ykf 4ylf 4ym cHD=9K= K= :=DGO L9:D= 9F< FGL=Kld ^ ~=9NQ DG9< MH LG mmhlnC5w
|
Original
|
klg relay |
PDF
|
W28C256
Abstract: w28c .18 micrometer mos 200517-8
Contextual Info: W28C256 Radiation Hardened 32K x 8 CMOS EEPROM Northrop Grumman Corporation ECN 2005178 Rev. F May 2005 Features • 1.25 Micrometer Radiation Hardened CMOS on Epi − Total Dose up to 300 Krad Si − Transient Logic Upset >5E7 Rad(Si)/sec − Memory Data Loss >1E12 Rad(Si)/sec
|
Original
|
w28c256w28c18 micrometer mos200517-8 |
PDF
|
RLM01
Abstract: 777C
Contextual Info: <:9/3-3. ?=@=5EFC9 <=;< BAG9C >5E7<=@; C9>5H :LIWXULV ~ @7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE: 0EhgmZ\m\:777C] D^ZkZ[e^ ehZ]\ =777CehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1
|
Original
|
777cehz777ops5c57e9crlm01+1777c
|
PDF
|
AC89C
Abstract: 777C
Contextual Info: <:9/3-3. ?=@=5EFC9 <=;< BAG9C >5E7<=@; C9>5H :LIWXULV ~ @7C lpbm\abg` \ZiZ[bebmr ~ LZm\abg` k^eZr ~ C\\hk]bg` mh KGE=97<<AUE: 0EhgmZ\m\:777C] D^ZkZ[e^ ehZ]\ =777CehZ]4\nkk^gm1 ~ ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1 ~ Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1
|
Original
|
777cehz777ops5c57e9cac89c+1777c
|
PDF
|
K7Q161852A
Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Contextual Info: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control
|
Original
|
k7q163652ak7q161852a512kx361mx18+8512kx36-bit1mx18-bitk7q161852a-fc10k7q161852a-fc13k7q161852a-fc16k7q163652a-fc10k7q163652a-fc13k7q163652a-fc16
|
PDF
|
10D-11
Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
Contextual Info: K7R163682B K7R161882B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDR TM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17, 2002 Advance 0.1 1. Change the Boundary scan exit order.
|
Original
|
k7r163682bk7r161882bk7r160982b512kx36+101mx18512kx36-bit1mx18-bit10d-11k7r160982b-fc16k7r160982b-fc20k7r161882b-fc16k7r161882b-fc20k7r163682b-fc16k7r163682b-fc20
|
PDF
|
K7Q161864B-FC16
Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
Contextual Info: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
|
Original
|
k7q163664bk7q161864b512kx361mx18+5512kx36-bit1mx18-bitk7q161864b-fc16d0-35k7q163664b-fc16
|
PDF
|
D0-35
Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
Contextual Info: K7J163682B K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary
|
Original
|
k7j163682bk7j161882b512kx361mx18+10512kx36-bit1mx18-bit165fbgad0-35k7j161882b-fc16k7j161882b-fc20k7j161882b-fc25k7j163682b-fc16k7j163682b-fc20k7j163682b-fc25
|
PDF
|
431 97f
Abstract: 603 46F C9F 304 NJU6645 0Aa 0ab 521 CA3 111V2 ABF 603 554 CA3 CBF 423
Contextual Info: Preliminary NJU6645 暫定資料 16 桁 6 行漢字 ROM 内蔵 ドットマトリックス LCD コントローラドライバ ! 概 要 NJU6645 は16x16 ドットサイズの漢字キャラク タを 16 桁 6 行、または 96x256 ドットのグラフィッ
|
Original
|
nju664516x1696x256nju6645cj+9431 97f603 46fc9f 3040aa 0ab521 ca3111v2abf 603554 ca3cbf 423
|
PDF
|
STP38N06
Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
Contextual Info: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
stp38n06100oc175oco-220+3n mosfet depletion pspice model parametersnmos depletion pspice model19e-02
|
PDF
|
CRC16
Abstract: DS2502 DS2502P
Contextual Info: DS2502–E64 PRELIMINARY DS2502–E64 IEEE EUI–64 Node Address Chip FEATURES TO–92 TSOC PACKAGE factory programmed 64–bit node address chip EUI–64 with 768 bits user–programmable OTP–EPROM communicates with the economy of one signal plus ground
|
Original
|
ds2502crc16ds2502p |
PDF
|
DS2505
Abstract: CRC16 DS2502 DS2502P DS2502S DS2505P DS2506 DS2506S tsoc package
Contextual Info: DS2502/5/6–UNW UniqueWareTM SPECIAL FEATURES DS2502/5/6–UNW Add–Only Memory TO–92/PR–35 • 1024 bits, 16K bits or 64K bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration
|
Original
|
ds2502/5/692/prcrc16ds2505+7ds2502ds2502pds2502sds2505pds2506ds2506stsoc package
|
PDF
|
LA 7612
Abstract: pot 100K smd 100S CLC446 CLC446AJ CLC446AJE CLC446AJP D0034
Contextual Info: National Semiconductor Comlinear CLC446 400MHz, 50mW Current-Feedback Op Amp General Description Features The Comlinear CLC446 is a very high-speed unity-gain-stable current-feedback op amp that is designed to deliver the highest levels of performance from a mere 50mW quiescent power. It
|
OCR Scan
|
clc446400mhz900ps527t101+7la 7612pot 100k smd100sclc446ajclc446ajeclc446ajpd0034
|
PDF
|
dallas ds2501
Abstract: DS2501-UNW DS2501 tsoc package DS2501S-UNW code ds2501 dallas ds2501 Datasheet ds2501 Datasheet DS2502-UNW TSOC
Contextual Info: DS2501–UNW/DS2505–UNW DS2501–UNW/DS2502–UNW UniqueWareTM Add Only Memory SPECIAL FEATURES • 512 bits DS2501–UNW or 1024 bits (DS2502–UNW) Electrically Programmable Read Only Memory (EPROM) communicates with the economy of one signal plus ground
|
Original
|
ds2501unw/ds2505unw/ds2502ds2502+9dallas ds2501ds2501-unwtsoc packageds2501s-unwcode ds2501dallas ds2501 datasheetds2501 datasheetds2502-unwtsoc
|
PDF
|
|
|
434H
Abstract: 634h 312H 633h A03h dc-dc 427h 1E5H 613H 413h EM65168
Contextual Info: Elan Microelectronics Crop. EM65168 80 COM/SEG LCD DRIVER December 23,2002 Version 0.1 Preliminary Version 0.1 EM65168 Specification Revision History Content Initial version Date December 23, 2002 EM65168 LCD DRIVER Contents 1. GENERAL DESCRIPTION . 4
|
Original
|
em6516880common160segment434h+8634h312h633ha03hdc-dc 427h1e5h613h413h
|
PDF
|
75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
|
Original
|
hufa75631p3hufa75631s3sto-220abo-263ab+375631pan9321tb334
|
PDF
|
7n10l
Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes
|
Original
|
rfd7n10lerfd7n10lesm7n10l7n10le+4an7254an7260rfd7n10lesm9atb334
|
PDF
|
76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Contextual Info: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
|
Original
|
huf76639p3huf76639s3so-220ab76639p+3huf76639s3sttb33492e2
|
PDF
|
DIODE marking CK 6CA
Abstract: DIODE marking 7BA SG 6CA 6ca DIODE code 20c 7ba Diode HP5 637 409 SG 5BA MARKING CO5 sg 7ba ai cm1 100 1e8
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
m306h1sfpdiode marking ck 6cadiode marking 7basg 6ca+76ca diodecode 20c 7badiode hp5 637 409sg 5bamarking co5sg 7baai cm1 100 1e8
|
PDF
|
AN7254
Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI
|
Original
|
rf1k49154an7254an9321an9322+3ms-012aarf1k4915496tb334
|
PDF
|
76423P
Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
Contextual Info: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S
|
Original
|
hufa76423p3hufa76423s3so-220abo-263ab+576423p76423shufa76423s3sttb33463e13
|
PDF
|
7n10l
Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum
|
Original
|
rfd7n10lerfd7n10lesm7n10l7n10le+4an7254an7260rfd7n10lesm9atb334
|
PDF
|
76645S
Abstract: 76645P HUF76645P3 HUF76645S3S HUF76645S3ST TB334
Contextual Info: HUF76645P3, HUF76645S3S Data Sheet August 1999 File Number 4716.2 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76645P3 HUF76645S3S Features • Ultra Low On-Resistance
|
Original
|
huf76645p3huf76645s3so-220ab76645s+376645phuf76645s3sttb334
|
PDF
|
IRF530N
Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
|
Original
|
irf530no-220aban7254an7260+3an9321an9322tb334
|
PDF
|
