5BW 12 Search Results

6CQ8

Abstract: 6bq7 tube 6bq7 5cl8 6bk7 6br8 5CQ8 5bk7 tube 6BQ7A TWIN TRIODE
Contextual Info: 5 B K 7 -A 5 B Q 7 -A 5BR8 5BW 8 5CG8 5CL8-A ELECTRONICS ^^DESCRIPTIO N AND RATING^— ET*-T*999C Page 1 - 5 B K 7 -A -5BK7-A Twin Triode. Except for heater characteristics and ratings, the 5BK7-A is identical to th e 6BK7-B.

5BW 30

Abstract: C12V st 5bw 12 H278CGD H278CGD5V H278CGDL H278CHD H278CHD5V H278CHDL H278CRD
Contextual Info: L ED A s s y. No . ST A NDA RD H278CBW D H278CGD H278CY D H278CHD H278CRD H278CSRD L OW C URRENT H278CGDL H278CY DL H278CHDL 5 V OL T H278CGD5V H278CY D5V H278CHD5V 12 V OL T H278C5GC12V H278C5GD12V H278C5Y C12V H278C5Y D12V H278C5HC12V H278C5HD12V H278C5RC12V

5az 11

Abstract: 5BW 30 5bw 12 marking code 5bw marking code 5AW marking 5AY 5bm Marking sma5j5
Contextual Info: SMA5J5.0 thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40 V Peak Pulse Power 500 W DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79)

5BW 30

Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

transistor 5bw

Abstract: MARKING CODE 5bw marking 5bw marking code 5bw 67 5BW MARKING marking 5ah marking code 5AW SMA5J22 transistor 6bn SMA5J36
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

MARKING 5bk

Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

5AW 67

Abstract: marking code 5bw 67 SMA5J30
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

transistor 5bw

Abstract: 5BW MARKING SMA5J22 marking code 5bw SMA5J36 5AW 83 SMA5J24A 5BZ marking 5AY SMA5J18A marking 5bs
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking code 5AW

Contextual Info: New Product SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: HA12089NT/MP -Sound Signal Processing IC for Automatic Telephone Answering System The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly in fundamental features necessary to the automatic answering

transistor 5bw

Contextual Info: HA12089NT/MP-Sound Signal Processing IC for Automatic Telephone Answering System Description HA12089NT The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly in fundamental features necessary to the automatic answering

Contextual Info: MM Registers - For a summary of all registers refer to the Register Summary section at the end of this chapter. All reserved bits must be written to a zero. NOTE: Control Registers 0x00— DS1/DS2 Output Control Register CR00

CXK77B3640GB

Abstract: SA12 SA13 SA14 SA15 SA16
Contextual Info: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write

Contextual Info: SONY CXK77B3641AGB / CXK77B1841AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 33/37/5/6 P r e lim in a r y Description The CXK77B3641A (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits)

how to read Maxim date code

Abstract: 5BW 63 DS1992 DS1992L-F5 DS1993 DS1993L-F5 DS9092 DS9093F DS9093RA DS9096P
Contextual Info: 19-4865; Rev 4/11 DS1992/DS1993 1Kb/4Kb Memory iButton SPECIAL FEATURES COMMON iButton FEATURES • •       4096 bits of Read/Write Nonvolatile Memory DS1993 1024 bits of Read/Write Nonvolatile Memory (DS1992) 256-bit Scratchpad Ensures Integrity of Data

Contextual Info: IBM043611QLAB IBM041811QLAB Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential GTL/HSTL Clock • Single +3.3V Power Supply and Ground

Contextual Info: DS1992/DS1993 1kb/4kb Memory iButton www.iButton.com SPECIAL FEATURES § § § § § § § § 4096 bits of Read/Write Nonvolatile Memory DS1993 1024 bits of Read/Write Nonvolatile Memory (DS1992) 256-bit Scratchpad Ensures Integrity of Data Transfer Memory Partitioned into 256-bit Pages for

Contextual Info: DS1996 64-kbit Memory iButtonÒ www.iButton.com SPECIAL FEATURES § § § § § § § F5 MICROCAN 65536 bits of read/write nonvolatile memory Overdrive mode boosts communication speed to 142 kbits per second 256-bit scratchpad ensures integrity of data transfer

Contextual Info: 19-4865; Rev 4/11 DS1992/DS1993 1Kb/4Kb Memory iButton SPECIAL FEATURES COMMON iButton FEATURES • •       4096 bits of Read/Write Nonvolatile Memory DS1993 1024 bits of Read/Write Nonvolatile Memory (DS1992) 256-bit Scratchpad Ensures Integrity of Data

transistor 5bw

Abstract: 5AW transistor 5aw sot23 5Ct transistor 5bw marking transistor transistor 5aw marking 5AY 5bw SOT23 5bw transistor 5BW 30
Contextual Info: STM6321, STM6322, STM6821, STM6822, STM6823, STM6824, STM6825 5-pin supervisor with watchdog timer and push-button reset Datasheet −production data Features • Precision VCC monitoring of 5, 3.3, 3, or 2.5 V power supplies ■ RST outputs active low, push-pull or open

TC59S6432bft

Contextual Info: TOSHIBA TENTATIVE TC59S6432BFT/BFTL-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits.

bt830

Contextual Info: Bt8340 DS3 Demultiplexer with LAPD Receiver The Bt8340 is a highly integrated DS3 framer and demultiplexer chip that when used with the companion Bt8350 DS3 multiplexer chip provides an efficient trans­ ceiver solution for M13 and M23 applications. The Bt8340 is compatible with