5A MOSFET Search Results

w5nk90z

Abstract: B2 marking code Zener STW6NK70Z JESD97 STF6NK70Z STP6NK70Z p6nk
Contextual Info: STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET General features VDSS @Tjmax RDS(on) STP6NK70Z 700 V < 1.8 Ω 5A STF6NK70Z 700 V <1.8 Ω 5 A(1) STW6NK70Z 700 V < 1.8 Ω 5A Type ID

P7NM50N

Abstract: STP7NM50N dpak mosfet st 220 f1 JESD97 STD7NM50N STD7NM50N-1 STF7NM50N F7NM50N d7nm50n
Contextual Info: STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD7NM50N 550V <0.78Ω 3 5A 1 STD7NM50N-1 550V <0.78Ω 5A

STP6NB25

Abstract: STP6NB25FP
Contextual Info: STP6NB25 STP6NB25FP N-CHANNEL 250V - 0.9Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS on ID STP6NB25 250 V < 1.1 Ω 5A STP6NB25FP 250 V < 1.1 Ω 5A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP5NB100FP

Abstract: STP5NB100
Contextual Info: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING

P7NK30Z

Abstract: F7NK30Z p7nk STF7NK30Z STP7NK30Z
Contextual Info: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A - TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω

Contextual Info: LM21305 LM21305 5A Adjustable Frequency Synchronous Buck Regulator Literature Number: SNVS639E LM21305 5A Adjustable Frequency Synchronous Buck Regulator General Description Key Specifications The LM21305 is a full-featured 5A synchronous buck POL regulator optimized for solution size, flexibilty, and high conversion efficiency. High power density LM21305 designs are

Z1094AI

Abstract: z1094di Z1094A AOZ1094AIL AOZ1094 5a 12v dc dc converter AOZ1094AI AOZ1094DIL MSS1278-472MLD MSS1260-472MLD
Contextual Info: AOZ1094 EZBuck 5A Simple Buck Regulator General Description Features The AOZ1094 is a high efficiency, simple to use, 5A buck regulator. The AOZ1094 works from a 4.5V to 16V input voltage range, and provides up to 5A of continuous output current with an output voltage adjustable down

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

AME5285

Contextual Info: AME AME5285 5A, 300KHz ~ 1.4MHz Synchronous Rectified Step-Down Converter n General Description n Applications l TV The AME5285 is a Synchronous Rectified Step-Down Converter with internal power MOSFETs. It achieves 5A continous output current over a wide switching frequency

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

VDMOS reliability testing report

Abstract: Rad Hard in Fairchild for MOSFET
Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, ros ON = 0.680£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

JESD97

Abstract: S5PF30L STS5PF30L STS5PF30L ST
Contextual Info: STS5PF30L P-channel 30V - 0.045Ω - 5A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS5PF30L 30V <0.055Ω 5A • Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface

Contextual Info: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FRS234D FRS234H FRS234R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS234D, FRS234R, FRS234H 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 250V, RDS on = 0.715Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: 3E12 FRS440D FRS440H FRS440R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

ZXGD3003E6

Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

1E14

Abstract: 2E12 FRL230D FRL230H FRL230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

high power pulse generator with mosfet

Contextual Info: 53258 RADIATION TOLERANT 120VDC – 5A POWER MOSFET OPTOCOUPLER Features: Applications: • • • • • • • • • • • • • • Design for 100 krad Si Total Dose Hermetically Sealed in Surface Mount Package Low On-resistance 5A Continuous Output Current

FRL9130R

Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
Contextual Info: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 FRS234D FRS234H FRS234R
Contextual Info: FRS234D, FRS234R, FRS234H 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 250V, RDS on = 0.715Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: 53258 RADIATION TOLERANT 120VDC – 5A POWER MOSFET OPTOCOUPLER Features: Applications: •              Design for 100 krad Si Total Dose Hermetically Sealed in Surface Mount Package Low On-resistance 5A Continuous Output Current