58M TRANSISTOR Search Results

Contextual Info: ZXT13P40DE6 SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

CEM8933A

Contextual Info: CEM8933A Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.3A, RDS ON = 58mΩ @VGS = -4.5V. RDS(ON) = 98mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

ZXT13P40DE6TC

Abstract: P40D P-40D
Contextual Info: ZXT13P40DE6 SuperSOT4 50V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

P40D

Abstract: ZXT13P40DE6 ZXT13P40DE6TA ZXT13P40DE6TC DSA0037469
Contextual Info: ZXT13P40DE6 SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

MGSF3442X

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =58mΩ (TYP)

greenline portfolio

Abstract: MGSF3442X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442X Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =58mΩ (TYP)

s2dg1

Contextual Info: CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability.

AOP601

Abstract: AOP601L
Contextual Info: AOP601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A

29a65

Abstract: CET4401
Contextual Info: CET4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package.

CEM4953A

Contextual Info: CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 5 -30V, -4.5A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM4953A

Contextual Info: CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

M4680

Abstract: AOP600 AOP600L
Contextual Info: AOP600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS =- 4.5V) The AOP600 uses advanced trench technology to

AOP604

Contextual Info: AOP604 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A

cem4955

Contextual Info: CEM4955 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

Contextual Info: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

SEM 2004

Abstract: P5806NVG
Contextual Info: P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

Contextual Info: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

Contextual Info: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)

cem8958a

Abstract: spf-90
Contextual Info: CEM8958A Dual Enhancement Mode Field Effect Transistor N and P Channel PRELIMINARY FEATURES 5 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).

Contextual Info: Complementary MOSFET ELM36601EA-S •General Description ■Features ELM36601EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=3.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 88mΩ(Vgs=4.5V)

028A5

Abstract: MSP90 2SC5220 2SC550 BLY95 MSP40 MHT4513 2SC5240 BLY80 STC7644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

DTG110B

Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

MSP90

Abstract: D28A12 2sc910 cross 028A5 MHT4515 B3616 B3617 B3749 D28A5 D28A6
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

028A5

Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C