584000 Search Results

Contextual Info: DRAM MODULES 584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

12 PIN SIP

Contextual Info: Home | Contact Us | About Aavid -Useful Search by part # For use with 12 PIN SIP packages Printer friendl Check distributor part inventory Part Number - 584000B00000G VIS - 002741 Browse Products -By Device- Mechanical Outline Drawing -By Product Line-Attachment Methods-Interface Materials-Accessories-

Contextual Info: DRAM MODULES 584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KMM584000A7

Contextual Info: 584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM M 584000A- 8 80ns 20ns 150ns K M M 584000A -10 100ns 25ns 180ns KM M 584000A- 7 • • • • • • •

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] 584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

584000B03500

Contextual Info: Product Number: 584000B03500 Clip on heat sink featuring louvers and solderable tabs. Product Information This non-electronic component is functionally unaffected by the normal soldering or reflow processes used for semiconductor circuits. The heat resistance time or heat resistance

Contextual Info: Aavid Thermalloy LLC 80 Commercial St. Concord, NH 03301 Product Change Notification PCN Publish Date: October 27, 2005 PCN #: 017669-002741 Change Title: Part number change Products Affected: Current Aavid Part Number New RoHS Compliant Part Number 584000B00000

Contextual Info: HYUNDAI SEMICONDUCTOR H Y M 584000 Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The 584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 In 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22pF decoupling capacitor Is mounted for each DRAM.

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: CC1000 CC1000 Single Chip Very Low Power RF Transceiver Applications • Very low power UHF wireless data transmitters and receivers • 315 / 433 / 868 and 915 MHz ISM/SRD band systems • RKE – Two-way Remote Keyless Entry • • • • • Home automation

Chips and Technologies F840

Abstract: b1115 d6160
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

RF 433.9 RT4

Abstract: C171 C181 CC1010 CFR47 TQFP-64 CC1000
Contextual Info: Chipcon SmartRF  CC1010 CC1010 Single Chip Very Low Power RF Transceiver with 8051-Compatible Microcontroller Applications • Very low power UHF wireless data transmitters and receivers • 315 / 433 / 868 and 915 MHz ISM/SRD band systems • Home automation and security

RF 433 RT6

Abstract: abstract 5 pen pc technology RF transmitter rt4 433.9 RF 433 RT5 SWRA068 8051 opcode hexadecimal with mnemonic sheet wireless encrypt adcon telemetry
Contextual Info: CC1010 CC1010 Single Chip Very Low Power RF Transceiver with 8051-Compatible Microcontroller Applications • Very low power UHF wireless data transmitters and receivers • 315 / 433 / 868 and 915 MHz ISM/SRD band systems • Home automation and security

00103A

Contextual Info: APPLICATION NOTE H8/300H Tiny Series Signed 32-Bit Binary Multiplication MULS Introduction Carries out binary multiplication in this format: multiplicand (signed, 32 bits) x multiplier (signed, 32 bits) = product (signed, 64 bits). Target Device H8/300H Tiny Series

CD7577

Abstract: D1557 transistor d1557 D146D 11.0592 MHz crystal da2000 CC4000 CC6000 D16000 D12000
Contextual Info: Application Note AN011 AN011 Programming the CC1000 frequency for best sensitivity By S. Vetti Keywords • • • • • CC1000, frequency programming ISM band frequencies Optimum sensitivity Software compensation for crystal frequency errors Optimum frequencies for frequency hopping the 902-928 MHz band, USA FCC

RF 433 RT6

Abstract: Keil uVision 4 user manual
Contextual Info: CC1010 CC1010 Single Chip Very Low Power RF Transceiver with 8051-Compatible Microcontroller Applications • Very low power UHF wireless data transmitters and receivers • 315 / 433 / 868 and 915 MHz ISM/SRD band systems • Home automation and security

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

TDA10048

Abstract: TDA10048HN TDA18211 dvb-t demodulator with TV signal identification Chungho Elcom IC 935 TDA10048 package ic 931 681000 dvb t receiver
Contextual Info: TDA18211HD DVB-T Silicon Tuner IC Rev. 05 — 2 June 2009 Product data sheet 1. General description The TDA18211HD is a Silicon Tuner IC designed for digital terrestrial DVB-T TV reception. The TDA18211HD integrates the overall tuning function, including selectivity,

Contextual Info: SA MS UN G E L E C T R O N I C S INC 42E D B 7^4142 584000 00104bb Ô DRAM MODULES 4 Mx 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung 584000 Is a 4M b l t x 8 D ynam ic RAM high d e n sity m em ory m odule. The S am sung

CXK584000

Contextual Info: SONY. 584000TM/YM/M/P -55U70ua5L,0L -55LL/70LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM D escription 584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

RF transmitter rt4 433.9

Abstract: fsk TRANSMITTER ic for digital data transmissio nte ic 7456 MARKING CODE EA c program to interface imu to microcontroller 869,525 MHz ATI Rage CC1010 duplex RF 433.9 RT4 C171
Contextual Info: Chipcon SmartRF CC1010 CC1010 Single Chip Very Low Power RF Transceiver with 8051-Compatible Microcontroller Applications • Very low power UHF wireless data transmitters and receivers • 315 / 433 / 868 and 915 MHz ISM/SRD band systems • Home automation and security