58000H Search Results

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

A29L800

Abstract: A29L800V
Contextual Info: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.

Contextual Info: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from

ba 5937 fp

Contextual Info: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

am29LV8000

Abstract: L800DB90VC S29AL008D L800DT S29al008
Contextual Info: Am29LV800D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration path for this device. Please refer to the S29AL008D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

Contextual Info: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)

M29F800D

Abstract: M29F800DB M29F800DT
Contextual Info: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

a19t

Abstract: ba1s 000IH
Contextual Info: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

29F800T

Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Contextual Info: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory

Contextual Info: TOSHIBA TENTATIVE TC58FVT160/B160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

Contextual Info: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

MSM9018

Abstract: MSM9068 MSU3122 U3040 voice activated calculator M9068 sound activated switch kit
Contextual Info: MOSEL VITELIC INC. MSU3122 Preliminary July 1998 LCD-less 60" Voice Smart General Description The MSU3122 is a monolithic talking microcomputer that can memorize voice up to 60 seconds using MOSEL qualified coding method MPCM-5 . It's an integration of traditional 4-bit microcotroller and voice chip with minimal

a19t

Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
Contextual Info: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able