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    VISATON GmbH & Co KG PT-57-NG

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    DigiKey PT-57-NG Bulk 1
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    onsemi MC74AC257NG

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    onsemi MC74AC157NG

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    onsemi MC74ACT157NG

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    onsemi MC74ACT257NG

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    57NG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    369D

    Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
    Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    NTD4857N NTD4857N/D 369D NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC PDF

    Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    NTD4857N NTD4857N/D PDF

    4857ng

    Abstract: 57NG NTD4857NT4G 369D NTD4857N NTD4857N-1G NTD4857N-35G
    Contextual Info: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    NTD4857N NTD4857N/D 4857ng 57NG NTD4857NT4G 369D NTD4857N NTD4857N-1G NTD4857N-35G PDF